MA4E2514M-1116 [TE]
SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair; 众志成城低中垒硅肖特基二极管： T恤配对
| 型号： | MA4E2514M-1116 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SURMOUNT Low and Medium Barrier Silicon Schottky Diodes: Tee Pair |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SURMOUNTTM Low and Medium Barrier
Silicon Schottky Diodes: Tee Pair
V 2.00
Case Style 1116
Features
A
n
Extremely Low Parasitic Capitance and Inductance
Surface Mountable in Microwave Circuits, No
Wirebonds Required
n
n
n
n
Rugged HMIC Construction with Polyimide Scratch
Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C, 16 hours)
Lower Susceptibility to ESD Damage
B
Description
The MA4E2514 SurMountTM Diode Tee series are Silicon
Low, and Medium Barrier Schottky Devices fabricated with
the patented Heterolithic Microwave Integrated Circuit
(HMIC) process. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low loss microstrip
transmission medium. The combination of silicon and glass
allows HMIC devices to have excellent loss and power
dissipation characteristics in a low profile, reliable device.
C
D
E
D
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead device
coupled with the superior mechanical performance of a chip.
The SurMount structure employs very low resistance silicon
vias to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip. These
devices are reliable, repeatable, and a lower cost performance
solution to conventional devices. They have lower
susceptibility to electrostatic discharge than conventional beam
lead Schottky diodes.
Millimeters
Inches
Dim
A
Min.
Max.
Min.
Max.
0.0445
0.0445
0.0040
0.0128
0.0128
0.0465
1.130
1.180
B
0.0465
0.0080
0.0148
0.0148
1.130
0.102
0.325
0.325
1.180
0.203
0.375
0.375
C
D Sq.
E
The multi-layer metalization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffusion
barrier, which permits all devices to be subjected to a 16-hour
non-operating stabilization bake at 300 °C.
MA4E2514 Equivalent Circuit
The “ 0505 ” outline allows for Surface Mount placement and
multi-functional polarity orientations.
Applications
The MA4E2514 Family of SurMount Schottky diodes are
recommended for use in microwave circuits through Ku band
frequencies for lower power applications such as mixers,
sub-harmonic mixers, detectors and limiters. The HMIC
construction facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount diode,
which can be connected to a hard or soft substrate circuit with
solder.
1
SurMountTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair
MA4E2514 Series
V 2.00
Electrical Specifications: @ 25 °C (Measured as Single Diodes)
Model
Type Recommended Vf @ 1 Vf @ 10 uA Ct @ 0 V
Rt Slope Resistance
Number
Frequency
Range
DC - 18 GHz
mA
( V )
( pF )
( Vf1 - Vf2 )/(10.5 mA-9.5 mA )
( mV )
330 Max
300 Typ
( W )
16 Typ
MA4E2514L
MA4E2514M
Low
Barrier
3 Min
5 Typ
0.12 Max
0.10 Typ
20 Max
Medium
Barrier
DC - 18 GHz
470 Max
400 Typ
12 Typ
18 Max
3 Min
5 Typ
0.12 Max
0.10 Typ
Rt is the dynamic slope resistance where
Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the
Ohmic Resistance
Max Forward Voltage Difference DVf @ 1 mA: 10 mV
Max Total Capacitance Difference DCt @ 0 V: 0.03 pF
Die Bonding
Handling
Die attach for these devices is made simple through the use
of surface mount die attach technology. Mounting pads are
conveniently located on the bottom surface of these
devices, and are opposite the active junction. The devices
are well suited for higher temperature solder attachment
onto hard substrates. 80Au/20Sn and Sn63/Pb37/Ag solders
are acceptable for usage.
All semiconductor chips should be handled with care to avoid
damage or contamination from perspiration and skin oils. The
use of plastic tipped tweezers or vacuum pickups is strongly
recommended for individual components. The top surface of
the die has a protective polyimide coating to minimize damage.
The rugged construction of these SurMount devices allows the
use of standard handling and die attach techniques. It is
important to note that industry standard electrostatic discharge
(ESD) control is required at all times, due to the sensitive
nature of Schottky junctions.
For Hard substrates, we recommend utilizing a vacuum tip
and force of 60 to 100 grams applied uniformly to the top
surface of the device, using a hot gas bonder with equal
heat applied across the bottom mounting pads of the device.
When soldering to soft substrates, it is recommended to use
a lead-tin interface at the circuit board mounting pads.
Position the die so that its mounting pads are aligned with
the circuit board mounting pads. Reflow the solder paste by
applying Equal heat to the circuit at both die-mounting
pads. The solder joint must Not be made one at a time,
creating un-equal heat flow and thermal stress. Solder
reflow should Not be performed by causing heat to flow
through the top surface of the die. Since the HMIC glass is
transparent, the edges of the mounting pads can be visually
inspected through the die after die attach is completed.
Bulk handling should insure that abrasion and mechanical
shock are minimized.
Absolute Maximum Ratings1
Parameter
Value
-40 °C to +150 °C
-40 °C to +150 °C
20 mA
Operating Temperature
Storage Temperature
Forward Current
Reverse Voltage
5 V
RF C.W. Incident Power
RF & DC Dissipated Power
+ 20 dBm
50 mW
1. Exceeding any of these values may result in permanent
damage
2
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
SurMountTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair
MA4E2514 Series
V 2.00
MA4E2514L Low Barrier SPICE PARAMETERS (per Diode)*
Is
(nA)
26
Rs
( W )
12.8
N
Cj0
( pF )
1.0 E-2
M
Ik
(mA)
14
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
BV
(V)
5.0
IBV
(mA)
1.0 E-2
1.20
0.5
0.5
MA4E2514M Medium Barrier SPICE PARAMETERS (per Diode)*
Is
(nA)
5 E-1
Rs
( W )
9.6
N
Cj0
( pF )
1.0 E-2
M
Ik
(mA)
10
Cjpar
(pF)
9.0 E-2
Vj
(V)
8.0 E-2
FC
BV
(V)
5.0
IBV
(mA)
1.0 E-2
1.20
0.5
0.5
* Spice parameters (per Diode) are based on the MA4E2502 Series datasheet.
Circuit Mounting Dimensions (Inches)
0.020
0.020
0.013
0.013
0.020
0.020
3
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
SurMountTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair
MA4E2514 Series
V 2.00
MA4E2514 Schematic Per Diode
Ct
Ls
Rs
Rj
Schematic Values per Diode
Model
Number
Ls (nH)
Ct ( pF )
Rs ( W )
Rj ( W )
MA4E2514L
0.7
0.7
13.4
9.4
26 / Idc
26 / Idc
0.10
0.10
MA4E2514M
Ordering Information
Part Number
Package
MA4E2514L-1116W
MA4E2514L-1116
MA4E2514L-1116T
MA4E2514M-1116W
MA4E2514M-1116
MA4E2514M-1116W
Wafer on Frame
Die in Carrier
Tape/Reel
Wafer on Frame
Die in Carrier
Tape/Reel
4
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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