MA4GP030-277 [TE]

GaAs PIN Diode Chips; 的GaAs PIN二极管芯片
MA4GP030-277
型号: MA4GP030-277
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

GaAs PIN Diode Chips
的GaAs PIN二极管芯片

二极管 开关
文件: 总6页 (文件大小:333K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GaAs PIN Diode Chips  
Rev. V1  
RoHS Compliant  
Features  
Anode  
May Be Directly Driven By TTL Signals  
RoHS Compliant  
Low Series Resistance  
Fast Switching Speed  
No Reverse Bias Required  
Description  
Gallium Arsenide PIN diodes offer improved  
performance characteristics over silicon in many  
microwave semiconductor applications These  
benefits result from the intrinsic semiconductor  
properties of GaAs. Its inherent high carrier mobility  
results in a low resistance fast switching device. The  
low carrier concentration in the I region layer  
produces a near zero punch through bias voltage.  
Gallium Arsenide's high band gap also assures it will  
operate at high operating temperatures.  
Full Area Cathode  
Switching speeds in the low nanosecond range  
using an inexpensive TTL buffer logic is attainable  
with GaAs PIN diodes. This performance can be  
achieved because GaAs PIN diodes exhibit high  
impedance at a positive bias (up to .5V). Reverse  
bias is not required for many GaAs PIN diode  
applications. Low loss, in switch and phase shifter  
circuits at frequencies up to 40 GHz is possible as a  
result of low parasitic series resistance in the  
conducting and non-conducting states.  
MIL-STD 750 Environmental Ratings  
M/A-COM’s GaAs PIN diode chips are also available  
in several different package styles. See page 4  
Method  
Parameter  
Level  
Absolute Maximum Ratings1  
5cycles  
-65°C to +150°C  
Temp. Cycling  
1051  
Parameter  
Maximum Value  
-65°C to +175°C  
-65°C to +175°C  
0.25W @ 25°C  
Vibration  
2056  
2006  
15g’s  
Operating Temperature  
Storage Temperature  
Power Dissipation  
Constant Acceleration  
20,000g”s  
Moisture Resistance  
(Packaged diodes)  
1021  
10 Days  
Junction Temperature  
Mounting Temperature  
+175°C  
+320°C for 10 seconds  
1. Exceeding these limits may cause permanent damage.  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
GaAs PIN Diode Chips  
Rev. V1  
RoHS Compliant  
GaAs Chip Specification @ TAMB = +25°C  
Nominal Characteristics  
Max. Rev.  
Volt.1  
Max. Cap.  
1 MHz  
Cj @ -10 V  
Max. Series Res. 2 Carrier Lifetime  
Switching Speed 3  
Part Number  
1 GHz  
RS @ 20 mA  
TL @ IFOR = 10 mA  
IREV = 6 mA  
7 GHz  
VR < 10 µA  
ηS  
VDC  
pF  
ηS  
MA4GP022-277  
MA4GP030-277  
50  
0.15  
1.0  
5
15  
25  
100  
0.06  
2.0  
10  
Notes:  
1. VR ( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10µA.  
2. Chip is mounted into case style ODS 30 ceramic package.  
3. Switching speed is measured between 1 dB and 20 dB loss in a shunt mounted switch  
Case Style 277 (Chip)  
Typical TTL Driver Circuit  
A
B
B
C
Anode  
Mils  
7 ± .5  
Dimension  
Millimeters  
A
B
C
.178 ± .013  
.279 ± .025  
.056 ± .008  
11 ± 1  
2.2 ± .3  
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
GaAs PIN Diode Chips  
Rev. V1  
RoHS Compliant  
Typical Performance @ TAMB = +25°C  
MA4GP022  
MA4GP030  
Figure 3. Typical Capacitance vs. Voltage at 1 GHz  
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
GaAs PIN Diode Chips  
Rev. V1  
RoHS Compliant  
Ordering Information  
The GaAs Chip specifications shown in the table on page 2 are for the stand alone die, package style 277. Note that the  
table lists the bare die junction capacitance and that the total capacitance for the base part in an alternative package will  
differ. The total capacitance in an alternative package can be computed by adding the capacitance shown in the table  
on page 2 to the parasitic capacitance of the alternative package as defined in the Package Parasitic Capacitance  
table below. The base part numbers are only available in the case styles shown in the Package Availability Table  
below. To order, indicate the base part number followed by a dash and the desired package style.  
For example: The MA4GP030-30 is the MA4GP030 chip in the 30 style package.  
Package Parasitic Capacitance  
Package Style Inductance (nH)  
Cap. (pF)  
30  
120  
137  
276  
277  
1056  
0.40  
0.40  
0.40  
0.18  
0.13  
0.13  
Style 120  
0.40  
0.13  
B
N/A (Chip)  
0.20  
N/A (Chip)  
0.20  
A
Package Availability Table  
Dimension  
Mils  
Millimeters  
A
B
53 ± 2  
45 ± 5  
1346 ± 51  
Base Part Number  
Available Package Styles  
1143 ± 127  
MA4GP022  
MA4GP030  
137, 277  
30, 120, 276, 277, 1056  
Style 30  
Style 137  
B
A
C
F
E
B
Cathode  
G
D
C
E
D
G
H
A
Dimension  
Mils  
Millimeters  
A
B
C
D
E
F
100 ± 10  
20 ± 2  
2540 ± 254  
508 ± 51  
Dimension  
Mils  
Millimeters  
100 ± 5  
4 ± 1  
2540 ± 127  
102 ± 25  
A
B
C
D
E
F
121 ± 4  
62 ± 2  
215 ± 10  
91 ± 6  
62 ± 2  
62 ± 2  
20 ± 4  
81 ± 2  
3073 ± 102  
1575 ± 51  
5461 ± 254  
2311 ± 152  
1575 ± 51  
1575 ± 51  
508 ± 102  
2057 ± 51  
50 max.  
1270 max.  
G
14 max.  
356 max.  
G
H
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
GaAs PIN Diode Chips  
Rev. V1  
RoHS Compliant  
Package Styles  
Style 137  
Style 1056  
A
C
B
Cathode  
A
A
E
Cathode  
D
F
Dimension  
Mils  
100 ± 10  
20 ± 2  
Millimeters  
B
A
B
C
D
E
F
2540 ± 254  
D
E
508 ± 51  
100 ± 5  
4 ± 1  
2540 ± 127  
102 ± 25  
F
50 max.  
14 max.  
1270 max.  
356 max.  
C
Dimension  
Mils  
Millimeters  
A
B
C
D
E
F
70 ± 5  
37 ± 4  
33 ± 3  
15 ± 2  
12 ± 2  
48 ± 5  
1778 ± 127  
940 ± 102  
838 ± 76  
Style 276  
A
B
381 ± 51  
305 ± 51  
1219 ± 127  
C
D
F
E
Dimension  
Mils  
15 ± 5  
45 ± 5  
5 max.  
53 ± 2  
200 min.  
20 ± 1  
Millimeters  
381 ± 127  
1143 ± 127  
127 max.  
A
B
C
D
E
F
1346 ± 51  
5080 min.  
508 ± 25  
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
GaAs PIN Diode Chips  
Rev. V1  
RoHS Compliant  
Die Handling and Mounting Information  
Handling: All semiconductor chips should be handled with care to avoid damage or contamination  
from perspiration, salts, and skin oils. The use of plastic tipped tweezers or vacuum pickups is  
strongly recommended for individual components. Bulk handling should ensure that abrasion and  
mechanical shock are minimized.  
Die Attach Surface: Die can be mounted with an 80Au/Sn20, eutectic solder preform or electrically  
conductive silver epoxy. The metal RF and D.C. ground plane mounting surface must be free of con-  
tamination and should have a surface flatness of < ±0.002”.  
Eutectic Die Attachment Using Hot Gas Die Bonder: A work surface temperature of 255oC is  
recommended. When hot forming gas is applied, the work area temperature should be approximately  
290oC. The chip should not be exposed to temperatures greater than 320oC for more than 10  
seconds.  
Eutectic Die Attachment Using Reflow Oven: See Application Note M541, “Bonding and Handling  
Procedures for Chip Diode Devices” at www.macom.com for recommended time-temperature profile.  
Electrically Conductive Epoxy Die Attachment: A controlled amount of electrically conductive,  
silver epoxy, approximately 1–2 mils in thickness, should be used to minimize ohmic and thermal  
resistance. A thin epoxy fillet should be visible around the perimeter of the chip after placement to  
ensure full area coverage. Cure conductive epoxy per manufacturer’s schedule. Typically 150°C for  
1 hour.  
Wire and Ribbon Bonding: It is recommended that thermo-compression or thermo-sonic bonding  
be used with little or no ultrasonics. The bonding tool and wire or ribbon used should be smaller than  
the anode contact diameter. A bonder heat stage temperature setting of 200oC, tool tip temperature  
of 150°C and a force of 18 to 50 grams is suggested. If ultrasonic scrubbing is necessary it should be  
adjusted to the minimum required to achieve a good bond. Excessive energy may cause the anode  
metallization to separate from the chip.  
For more detailed handling and assembly instructions, see Application Note M541,  
“Bonding and Handling Procedures for Chip Diode Devices” at www.macom.com.  
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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