MAAMGM0002-SMB [TE]
Amplifier, Distributed, 0.1W 1.0-18.0 GHz; 放大器,分布式, 0.1W 1.0-18.0 GHz的型号: | MAAMGM0002-SMB |
厂家: | TE CONNECTIVITY |
描述: | Amplifier, Distributed, 0.1W 1.0-18.0 GHz |
文件: | 总6页 (文件大小:185K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
MAAMGM0002-DIE
Rev E
Features
♦ 0.1 Watt Saturated Output Power Level
♦ 4 dB Typical Noise Figure
♦ Select-at-Test Biasing
♦ MSAG™ Process
Description
The MAAMGM0002-Die is a 0.1W Distributed Amplifier with on-chip
bias networks. This product is fully matched to 50 ohms on both the
input and output. The MMIC can be used as a broadband amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested to ensure performance compliance.
The part is fabricated using M/A-COM’s GaAs Multifunction Self-
Aligned Gate Process.
Primary Applications
♦ Test Equipment
♦ Electronic Warfare
♦ Radar
M/A-COM’s MSAG™ process features robust silicon-like manufac-
turing processes, planar processing of ion implanted transistors, mul-
tiple implant capability enabling power, low-noise, switch and digital
FETs on a single chip, and polyimide scratch protection for ease of
use with automated manufacturing processes. The use of refractory
metals and the absence of platinum in the gate metal formulation
prevents hydrogen poisoning when employed in hermetic packaging.
Also Available in:
SAMPLES
Description
Ceramic Package
Sample Board (Die)
Sample Board (Packaged)
Part Number
MAAMGM0002
MAAMGM0002-DIE-SMB
MAAMGM0002-SMB
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 5V, IDQ = 75 mA2, Pin = 13 dBm
Parameter
Symbol
Minimum
Typical
Maximum
Units
Bandwidth
GHz
1.0
18.0
f
Output Power
19.5
21
12
20
9
dBm
%
POUT
PAE
P1dB
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
dBm
dB
7
G
Noise Figure
Output TOI
NF
4
dB
OTOI
VSWR
31
dBm
Input VSWR
f = 2 GHz
1.7:1
2:1
2:1
Output VSWR
f = 2 GHz
VSWR
1.7:1
Gate Current
Drain Current
< 2
mA
mA
IGG
IDD
100
150
1. TB = MMIC Base Temperature
2. Adjust VGG between –1.0 and –0.3 V to achieve IDQ indicated.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
MAAMGM0002-DIE
Rev E
Maximum Ratings3
Parameter
Absolute Maximum
Units
Symbol
Input Power
Drain Voltage
PIN
VDD
19.0
+7.0
-1.5
-6.0
120
0.5
dBm
V
Gate Voltage
VGG
V
Gate Voltage, Select at Test
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipation (No RF)
Junction Temperature
HI, MID, LO
IDQ
V
mA
W
PDISS
TJ
170
°C
Storage Temperature
TSTG
-55 to +150
°C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Parameter
Symbol
Min
Typ
Max
Unit
Drain Voltage
Gate Voltage
VDD
VGG
4.5
5.0
5.5
V
V
-1.0
-0.6
-0.3
Gate Voltage, Select at Test
Input Power
HI, MID, LO
-5.0
13
V
PIN
ΘJC
TB
17
dBm
°C/W
Thermal Resistance
MMIC Base Temperature
91.2
Note 5
°C
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C — ΘJC* VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with care. To
operate the device, follow these steps according to which
configuration you are using.
Select-at-Test Gate Bias
Figure 5a.
Direct Gate Bias
Figure 5b.
1. With VDD = 0, apply VGG = -5V to HI,
1. With VDD = 0 V, set VGG = -0.8 V.
2. Set VDD = 5 V.
MID or LO for desired IDQ
.
2. Set VDD = 5V. Confirm IDQ
.
3. Adjust VGG for desired IDQ
.
3. Power down sequence in reverse.
4.Turn off VGG last.
4. Power down sequence in reverse.
5. Turn off VGG last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
MAAMGM0002-DIE
Rev E
30
28
26
24
22
20
18
16
14
12
10
8
12
POUT
PAE
11
10
9
8
7
6
5
4
Gain, Idq = 25%
Gain, Idq = 35%
Gain, Idq = 50%
NF, Idq = 25%
NF, Idq = 35%
NF, Idq = 50%
3
6
2
4
2
1
0
0
0.5
2.5
4.5
6.5
8.5
10.5
12.5
14.5
16.5
18.5
20.5
22.5
2
4
6
8
10
12
14
16
18
Frequency (GHz)
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 5V, Pin = 14dBm.
Figure 2. Gain and Noise Figure vs Idq as a Relative Percentage of Idss
(50% Idss ~ 100 mA).
6
5
4
3
2
1
Input VSWR
Output VSWR
0.5
2.5
4.5
6.5
8.5
10.5
12.5
14.5
16.5
18.5
20.5
22.5
Frequency (GHz)
Figure 3. Input and Output VSWR.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
MAAMGM0002-DIE
Rev E
Mechanical Information
Chip Size: 2.98 x 1.98 x 0.075 mm (118 x 78 x 3 mils)
1.980mm.
1.828mm.
VDD
1.094mm.
0.569mm.
0.152mm.
HI
MID
LO
VGG
GND
0
0
Figure 4. Die Layout
Bond Pad Dimensions
Pad
RF: IN, OUT
Size (mils)
4 x 4
Size (μm)
100 x 100
150 x 150
150 x 150
150 x 150
Drain Supply Voltage: VDD
Direct Gate Supply Voltage: VGG
Select-at-Test Gate Supply Voltage: HI, MID, LO
Ground: GND
6 x 6
6 x 6
6 x 6
150 x 150
6 x 6
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
MAAMGM0002-DIE
Rev E
VDD
0.1 μF
100 pF
VDD
RFOUT
RFIN
HI
MID
LO
VGG
GND
100 pF
Wirebond required to
reference on-chip Se-
lect-at-Test bias net-
work.
VGG
0.1 μF
Figure 5a. Required Bonding for Select-at-Test Gate Bias Configuration. Support
circuitry typical of MMIC characterization fixture for CW testing.
Pad
HI
Applied Voltage (V)
% IDSS
-5
-5
-5
50
35
25
MID
LO
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
MAAMGM0002-DIE
Rev E
Assembly and Bonding Diagram
VDD
0.1 μF
100 pF
VDD
RFOUT
RFIN
HI
MID
LO
VGG
GND
100 pF
VGG
0.1 μF
Figure 5b. Required Bonding for Direct Application of Gate Bias.
Support circuitry typical of MMIC characterization fixture for CW testing.
Pad
Applied Voltage (V)
% IDSS
VGG
-1.0 to -0.3
25 - 50
Die Handling:
Refer to Application Note AN3016.
Assembly Instructions:
Die Attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 310 °C to less than
7 minutes. Refer to Application Note AN3017 for more detailed information.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge
bond techniques. For DC pad connections, use either ball or wedge bonds. For best
RF performance, use wedge bonds of shortest length, although ball bonds are also
acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
6
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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