MAAMGM0003-DIE [TE]
0.4W Variable Distributed Amplifier 1.0 - 15.0 GHz; 0.4W可变分布式放大器1.0 - 15.0 GHz的
| 型号： | MAAMGM0003-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 0.4W Variable Distributed Amplifier 1.0 - 15.0 GHz |
| 文件： | 总7页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RO-P-DS-3046 - -
0.4W Variable Distributed Amplifier
1.0 – 15.0 GHz
Preliminary Information
Features
1.0 - 15.0 GHz GaAs MMIC Amplifier
♦ 1.0 to 15.0 GHz Operation
♦ 0.4 Watt Saturated Output Power Level
♦ Variable Gain Control
♦ Select at Test Biasing
♦ Variable Drain Voltage (5-8V) Operation
♦ Self-Aligned MSAG® MESFET Process
Primary Applications
♦ EW
♦ Radar
Description
The MAAMGM0003-Die is a 0.4W Distributed Amplifier
with on-chip bias networks and variable gain control. This
product is fully matched to 50 ohms on both the input and
output. The MMIC can be used as a broadband amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/
A-COM’s repeatable, high performance and highly reli-
able GaAs Multifunction Self-Aligned Gate (MSAG®)
MESFET Process. This process features silicon oxyni-
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 7V, VGG = -2V, Pin = 20 dBm
Parameter
Symbol
Typical
Units
Bandwidth
1.0-15.0
GHz
f
Output Power
26
11
25
7.5
dBm
%
POUT
PAE
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
dBm
dB
P1dB
G
OTOI
VSWR
Output TOI
39
dBm
Input VSWR
2:1
Gate Current
Drain Current
< 8
mA
mA
IGG
IDD
< 480
1. TB = MMIC Base Temperature
RO-P-DS-3046 - - 2/7
0.4W Variable Distributed Amplifier
MAAMGM0003-DIE
Maximum Operating Conditions 1
Parameter
Absolute Maximum
Units
Symbol
Input Power
PIN
25
dBm
Drain Voltage
VDD
+8.0
V
Gate Voltage, Primary
VGG
-3.0
-5.0
V
V
Gate Voltage, Select at Test
HI, MID, LO
Gate Voltage, Control
GATE
IDQ
0
V
mA
W
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipation (No RF)
Junction Temperature
420
3.4
180
PDISS
TJ
°C
Storage Temperature
TSTG
-55 to +150
°C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
VDD
VGG
5
7
8
V
V
Gate Voltage, Primary
Gate Voltage, Select at Test
Gate Voltage, Control
Input Power
-2.4
-2.0
-1.6
HI, MID, LO
-5.0
0
V
V
GATE
PIN
-4
0
23
dBm
Junction Temperature
MMIC Base Temperature
TJ
150
°C
°C
TB
Note 2
2. Maximum MMIC Base Temperature = 150°C — 25.8 °C/W * VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 5 V.
3. Adjust VGG to set IDQ, (approximately @ –2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn gate
voltage off last.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3046 - - 3/7
0.4W Variable Distributed Amplifier
MAAMGM0003-DIE
40
35
30
25
20
15
10
5
POUT
PAE
0
1
3
5
7
9
11
13
15
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 7V, Pin = 20dBm.
40
35
30
25
20
15
10
5
POUT
PAE
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
Drain Voltage (volts)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 9 GHz.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3046 - - 4/7
0.4W Variable Distributed Amplifier
MAAMGM0003-DIE
40
35
30
25
20
15
VDD = 6
10
VDD = 8
VDD = 7
VDD = 5
5
1
3
5
7
9
11
13
15
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
10
9
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
GAIN
VSWR
1
3
5
7
9
11
13
15
Frequency (GHz)
Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 7V.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3046 - - 5/7
0.4W Variable Distributed Amplifier
MAAMGM0003-DIE
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
GATE=0V
GATE=-2V
GATE=-4V
1
3
5
7
9
11
13
15
Frequency (GHz)
Figure 5. Small Signal Gain vs. Frequency at MID=-5V, VDD = 5V.
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-4.0
-3.6
-3.2
-2.8
-2.4
GATE Voltage (V)
Figure 6. Small Signal Gain vs. GATE Voltage at fo = 9.05 GHz, MID=-5V, VDD = 5V.
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3046 - - 6/7
0.4W Variable Distributed Amplifier
MAAMGM0003-DIE
Mechanical Information
Chip Size: 2.98 x 2.48 x 0.075 mm (118 x 98 x 3 mils)
2.480mm.
2.004mm.
GATE
2.328mm.
VDD
0.469mm.
0.152mm.
0
HI
MID
LO
VGG
GND
0
Figure 7. Die Layout
Bond Pad Dimensions
Pad
Size (mils)
4 x 8
Size (µm)
100 x 200
150 x 150
150 x 150
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
6 x 6
6 x 6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3046 - - 7/7
0.4W Variable Distributed Amplifier
MAAMGM0003-DIE
VDD
Gate Control
0.1 µF
0.1 µF
100 pF
100 pF
GATE
VDD
RFOUT
RFIN
GND
HI
MID
LO
VGG
Pad
Applied Voltage (V)
% IDSS
100 pF
HI
MID
LO
-5
-5
~50
~35
VGG
0.1 µF
-5
~25
VGG
-2.4 to -1.6
-4.0 to 0.0
Variable
n/a
GATE
Figure 8. Recommended bonding diagram for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW testing.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For
DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of
shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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