MAAP-011170-000SMB [TE]
Power Amplifier;
| 型号： | MAAP-011170-000SMB |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Power Amplifier |
| 文件： | 总6页 (文件大小：2774K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAAP-011170
Power Amplifier
37.0 - 40.0 GHz
Rev. V3
Functional Schematic
Features
Linear Power Amplifier
On-Chip Power Detector
Output Power Adjust
27.0 dB Small Signal Gain
+27.0 dBm P1dB Compression Point
+38.0 dBm OIP3
Lead-Free 7 mm 16-lead SMD Package
RoHS* Compliant and 260°C Reflow Compatible
Description
The MAAP-011170 is a four stage 37-40 GHz
packaged GaAs MMIC power amplifier that has a
small signal gain of 27 dB with a +38 dBm Output
Third Order Intercept. The amplifier contains an
integrated, temperature compensated, on-chip
power detector. This MMIC uses M/A-COM
Technology Solutions’ GaAs pHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.
Pin Configuration 2
Pin No.
Function
Pin No.
Function
The device comes in a RoHS compliant 7x7mm
Surface Mount Package offering excellent RF and
thermal properties. This device has been designed
for use in 38 GHz Point-to-Point Microwave Radio
applications.
1
RF Input
9
RF Output
Gate Bias,
Stage 1
Drain Bias,
Stage 3
2
3
10
11
Gate Bias,
Stage 2
Drain Bias,
Stage 2
Ordering Information 1
Gate Bias,
Stage 3
Drain Bias,
Stage 1
4
5-6
7
12
13,14
15
Part Number
Package
bulk quantity
MAAP-011170
Not Connected
Not Connected
Not Connected
MAAP-011170-TR1000
MAAP-011170-000SMB
tape and reel
evaluation module
Detector
Reference Output
8
Detector Output
16
Not Connected
1. Reference Application Note M513 for reel size information.
2.The exposed pad centered on the package bottom must be
connected to RF and DC ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-011170
Power Amplifier
37.0 - 40.0 GHz
Rev. V3
Electrical Specifications: 37-40 GHz (Ambient Temperature T = 25°C)
Parameter
Units
dB
Min.
Typ.
12.0
Max.
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (S21)
-
-
-
-
dB
12.0
dB
21
-
27.0
30
-
dB
+/-1.0
Reverse isolation (S12)
dB
-
-
50
-
-
Output Power for 1dB Compression Point (P1dB)
PSat
dBm
dBm
dBc
27.0
28.0
48.0
+38.0
25.0
1500
5.0
Output IMD3 with Pout (scl) = 14 dBm
Output IP3
43.0
35.5
-
-
dBm
mV
Vdiff @ Pout (scl) = 0 dBm
Vdiff @ Pout (scl) = 25 dBm
Vdiff slope @ Pout (scl) = 0 dBm
Drain Bias Voltage (Vd)
mV
mV/dB
VDC
VDC
mA
-
-1.0
-
4.0
4.0
-0.1
Gate Bias Voltage (Vg)
-0.3
Supply Current (Id1) (Vd=4.0V, Vg=-0.3V)
1000
1200
Absolute Maximum Ratings
Parameter
Absolute Max.
Parameter
Absolute Max.
Operating Temperature (Ta)
Storage Temperature (Tstg)
Mounting Temperature
-40°C to +85°C
-65°C to +150°C
260°C
Supply Voltage (Vd)
Gate Bias Voltage (Vg)
Input Power (Pin)
+4.3 V
-1.5 V < Vg < 0 V
15 dBm
ESD Min. - Human Body Model (HBM)
MSL Level
Class 1A
Max. Operating Junction/Channel
175°C
Temp
Continuous Power Dissipation (Pdiss)
at 85 °C
MSL3
7.0 W
1. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
2. For saturated performance it recommended that the sum of (2*Vdd + abs (Vgg)) <9V
Thermal and Reliability Information: Tbase = 85°C , Vd = 4V
Parameter
Test Conditions
Rating
Thermal Resistance
Id = 1A
Pdiss = 4W
Pdiss = 4W
Pdiss = 4W
12°C/W
Channel Temperature
Median Lifetime
Id = 1A
Id = 1A
135°C
4 E+7 Hours
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-011170
Power Amplifier
37.0 - 40.0 GHz
Rev. V3
Typical Performance Curves
3
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-011170
Power Amplifier
37.0 - 40.0 GHz
Rev. V3
Typical Performance Curves (cont.)
4
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-011170
Power Amplifier
37.0 - 40.0 GHz
Rev. V3
App Note [1] Biasing - It is recommended to bias the amplifier with Vd=4.0 V and Id=1000 mA. It is also
recommended to use active biasing to keep the currents constant as the RF power and temperature vary;
this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with
a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do
this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure
to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] Bias Arrangement - Each DC pin (Vd1,2,3 and Vg1,2,3) needs to have DC bypass
capacitance (10 nF/1 µF) as close to the package as possible.
App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by
providing +5 V bias and measuring the difference in output voltage with standard op-amp in a differential
mode configuration.
Typical Application
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAAP-011170
Power Amplifier
37.0 - 40.0 GHz
Rev. V3
Lead-Free 7 mm 16-Lead SMD†
* All Dimensions are in millimetres
Recommended Layout
†
Reference Application Note S2083 for lead-free solder reflow recommendations.
Plating is matte gold/nickel over copper.
6
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
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