概述
数据手册MAAP-015024-DIE 概述
Dual Sided Bias Architecture
MAAP-015024-DIE 数据手册
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Power Amplifier, 8 W
14.5 - 17.5 GHz
Rev. V5
Features
Functional Schematic
8 W Power Amplifier
20 dB Small Signal Gain
VG1 VD1
VG2
VD2 VG3
VD3
13
3
6
9
11
1
39 dBm Saturated Pulsed Output Power
Dual Sided Bias Architecture
100% On-wafer DC & RF Power Tested
100% Visual Inspection to MIL-STD-833
Bare Die
14 RFOUT
28
RFIN
Description
The MAAP-015024 three stage 14.5 - 17.5 GHz
GaAs MMIC power amplifier has a saturated pulsed
output power of 39 dBm and a small signal gain of
20 dB. The power amplifier must be biased directly
on both sides of the die.
15
25
19
17
27
22
This MMIC uses MACOM’s GaAs pHEMT device
technology and is based upon optical gate
lithography to ensure high repeatability and
uniformity. The chip has surface passivation for
protection and backside via holes and gold
metallization to allow a conductive epoxy die attach
process.
VG1 VD1
VG2
VD2 VG3
VD3
Pad Configuration
Pad No.
Function
Description
1
VG1
VD1
VG2
VD2
VG3
VD3
RFOUT
VD3
VG3
VD2
VG2
VD1
VG1
RFIN
1st Stage Gate Voltage
1st Stage Drain Voltage
2nd Stage Gate Voltage
2nd Stage Drain Voltage
3rd Stage Gate Voltage
3rd Stage Drain Voltage
RF Output
This device is well suited for communication and
radar applications.
3
6
9
11
13
14
15
17
19
22
25
27
28
Ordering Information
Part Number
Package
Die in vacuum release gel
pack
MAAP-015024-DIE
3rd Stage Drain Voltage
3rd Stage Gate Voltage
2nd Stage Drain Voltage
2nd Stage Gate Voltage
1ST Stage Drain Voltage
1st Stage Gate Voltage
RF Input
MAAP-015024-DIER
MAAP-015024-DIEEV1
MAAP-015024-DIEEV2
Diced Wafer on Grip Ring
Direct gate bias sample
board
On chip gate bias sample
board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015024
Power Amplifier, 8 W
14.5 - 17.5 GHz
Rev. V5
Electrical Specifications:
Freq. = 14.5 - 17.5 GHz, TA = +25°C, Duty Cycle = 5%, PIN = 23 dBm
Parameter
Gain
Units
dB
Min.
—
Typ.
21.0
+/-1.0
10.0
6.0
Max.
—
—
—
—
—
Gain Flatness
Input Return Loss
Output Return Loss
Reverse Isolation
dB
—
dB
—
dB
—
dB
—
50.0
Saturated Output Power
14.5 - 15.0 GHz
35.0
37.5
37.5
39.0
dBm
—
15.0 - 17.5 GHz
Drain Bias Voltage
Gate Bias Voltage
Current
V
V
A
—
—
—
8.0
-0.9
5.0
—
—
7.0
Absolute Maximum Ratings1,2
Parameter
Input Power
Absolute Maximum
+30 dBm
-0.5 V < VG < -2 V
+8.5 Vdc
Handling Procedures
Please observe the following precautions to avoid
damage:
Gate Voltage
Supply Voltage
Supply Current
7.5 A
Static Sensitivity
Storage Temperature
Operating Temperature
Junction Temperature3
-65°C to +165°C
-40°C to +85°C
+175°C
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. MACOM does not recommend sustained operation near
these survivability limits.
3. Operating at nominal conditions with TJ ≤ +175°C will ensure
MTTF > 1 x 106 hours.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015024
Power Amplifier, 8 W
14.5 - 17.5 GHz
Rev. V5
Schematic
Bonding Diagram
VD2
VD3
VD1
100 pF
100 pF
100 pF
RFIN
RFOUT
100 pF
100 pF
100 pF
100 pF
2.2 µF
2.2 µF
2.2 µF
VG1
VG2
VD3
VG3
MMIC Bare Die
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015024
Power Amplifier, 8 W
14.5 - 17.5 GHz
Rev. V5
Typical Performance Curves
Gain vs. Frequency
Reverse Isolation vs. Frequency
35
0
VG= -0.9 V, VD= 6.5 V
VG= -0.8 V, VD= 6.5 V
VG= -0.7 V, VD= 6.5 V
VG= -0.9 V, VD= 7.0 V
VG= -0.8 V, VD= 7.0 V
VG= -0.7 V, VD= 7.0 V
VG= -0.9 V, VD= 7.5 V
VG= -0.9 V, VD= 6.5 V
VG= -0.8 V, VD= 6.5 V
VG= -0.7 V, VD= 6.5 V
VG= -0.9 V, VD= 7.0 V
VG= -0.8 V, VD= 7.0 V
VG= -0.7 V, VD= 7.0 V
VG= -0.9 V, VD= 7.5 V
VG= -0.8 V, VD= 7.5 V
VG= -0.7 V, VD= 7.5 V
VG= -0.9 V, VD= 8.0 V
VG= -0.8 V, VD= 8.0 V
VG= -0.7 V, VD= 8.0 V
VG= -0.8 V, VD= 7.5 V
VG= -0.7 V, VD= 7.5 V
VG= -0.9 V, VD= 8.0 V
VG= -0.8 V, VD= 8.0 V
VG= -0.7 V, VD= 8.0 V
30
25
20
15
10
-20
-40
-60
-80
-100
14
15
16
Frequency (GHz)
17
18
18
18
14
15
16
Frequency (GHz)
17
18
18
18
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
0
10
VG= -0.9 V, VD= 6.5 V
VG= -0.8 V, VD= 6.5 V
VG= -0.7 V, VD= 6.5 V
VG= -0.9 V, VD= 7.0 V
VG= -0.8 V, VD= 7.0 V
VG= -0.7 V, VD= 7.0 V
VG= -0.9 V, VD= 7.5 V
VG= -0.8 V, VD= 7.5 V
VG= -0.7 V, VD= 7.5 V
VG= -0.9 V, VD= 8.0 V
VG= -0.8 V, VD= 8.0 V
VG= -0.7 V, VD= 8.0 V
VG= -0.9 V, VD= 6.5 V
VG= -0.8 V, VD= 6.5 V
VG= -0.7 V, VD= 6.5 V
VG= -0.9 V, VD= 7.0 V
VG= -0.8 V, VD= 7.0 V
VG= -0.7 V, VD= 7.0 V
VG= -0.9 V, VD= 7.5 V
VG= -0.8 V, VD= 7.5 V
VG= -0.7 V, VD= 7.5 V
VG= -0.9 V, VD= 8.0 V
VG= -0.8 V, VD= 8.0 V
VG= -0.7 V, VD= 8.0 V
-5
5
-10
-15
-20
-25
0
-5
-10
-15
14
15
16
17
14
15
16
17
Frequency (GHz)
Frequency (GHz)
Current vs. Frequency, VG = -0.9 V, VD = 8 V
Output Power vs. Frequency, VG = -0.9 V, VD = 8 V
50
7
Pin = 9 dBm
Pin = 15.6 dBm
Pin = 16.6 dBm
Pin = 17.6 dBm
Pin = 18.6 dBm
Pin = 19.7 dBm
Pin = 20.7 dBm
Pin = 21.6 dBm
Pin = 22.5 dBm
Pin = 23.3 dBm
Pin = 24.1 dBm
Pin = 24.7 dBm
Pin = 25.1 dBm
Pin = 10 dBm
Pin = 10.9 dBm
Pin = 11.9 dBm
Pin = 12.8 dBm
Pin = 13.7 dBm
Pin = 14.7 dBm
6
5
4
3
45
40
35
30
25
2
1
0
Pin = 23.3 dBm
14
15
16
17
14
15
16
17
Frequency (GHz)
Frequency (GHz)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015024
Power Amplifier, 8 W
14.5 - 17.5 GHz
Rev. V5
Typical Performance Curves
Gain @ 14.5 GHz vs. Output Power
Gain vs. Output Power
30
30
14.0 GHz
14.5 GHz
15.0 GHz
15.5 GHz
16.0 GHz
16.5 GHz
17.0 GHz
17.5 GHz
18.0 GHz
25
20
15
10
5
25
20
15
+25°C
-40°C
+85°C
10
25
30
35
40
25
30
35
40
Output Power (dBm)
Output Power (dBm)
Gain @ 15.5 GHz vs. Output Power
Gain @ 15.0 GHz vs. Output Power
30
30
25
20
25
20
15
15
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
10
10
25
30
35
40
25
30
35
40
Output Power (dBm)
Output Power (dBm)
PAE vs. Output Power
0.25
14.0 GHz
14.5 GHz
15.0 GHz
15.5 GHz
16.0 GHz
16.5 GHz
17.0 GHz
17.5 GHz
18.0 GHz
0.20
0.15
0.10
0.05
0.00
28
30
32
34
36
38
40
42
Output Power (dBm)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015024
Power Amplifier, 8 W
14.5 - 17.5 GHz
Rev. V5
Applications Section
Application Notes
Note 3 - Pulse Operation
Note 1 - Biasing
The performance of the MAAP-015024 is
characterized under pulsed conditions with a pulse
width of 5 µS and a duty cycle of 5%. The
measurements were taken while the drain voltage
was pulsed. It is strongly recommended to ensure
the heat generated is dissipated from the die with
an adequate thermal solution. If this thermal path
is not provided this will result in reduced
performance/lifetime and possible thermal runaway
that will permanently damage the PA. It is not
recommended to operate this PA in CW operation
unless the bias is reduced.
The MAAP-015024 is biased directly through the
gates (VG1, VG2 and VG3) of the power amplifier
(PA). The VG should be biased on one side of the
PA. The VD3 must be biased on both sides of the
PA. The VD1 and VD2 should only be biased on
one side of the PA. The PA is biased typically with
VG = -0.9 V and VD = 8 V.
The bias (VG1, VG2, VG3) should always be applied
before the drain voltage (VD1, VD2, V+3) is applied
and when switching off the PA the drain voltage
must be switched off first before the gate voltage.
It is strongly recommended to pulse the drain
voltage of the PA so the heat can be dissipated
from the device.
Note 2 - Bias Arrangement
Each DC pin (VD and VG) needs to have DC bypass
capacitance of 100 pF as close to the device as
possible. In addition the VG must have 2.2 µF on
the side the gate voltage is applied. It is
recommended to also use a further capacitance of
0.01 µF on the DC pins.
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015024
Power Amplifier, 8 W
14.5 - 17.5 GHz
Rev. V5
Applications Section
Handling and Assembly
Die Attachment
Wire Bonding
This product is 0.075 mm (0.003") thick and has
vias through to the backside to enable grounding to
the circuit. Microstrip substrates should be brought
as close to the die as possible. The mounting
surface should be clean and flat. If using
conductive epoxy, recommended epoxies are
Tanaka TS3332LD, Die Mat DM6030HK or
DM6030HK-Pt cured in a nitrogen atmosphere per
manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface
of the die. An epoxy fillet should be visible around
the total die periphery. For additional information
please see the MACOM "Epoxy Specifications for
Bare Die" application note. If eutectic mounting is
preferred, then a flux-less gold-tin (AuSn) preform,
approximately 0.0012 thick, placed between the die
and the attachment surface should be used. A die
bonder that utilizes a heated collet and provides
scrubbing action to ensure total wetting to prevent
Windows in the surface passivation above the bond
pads are provided to allow wire bonding to the die's
gold bond pads. The recommended wire bonding
procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance.
Gold 0.025 mm (0.001") diameter wedge or ball
bonds are acceptable for DC Bias connections.
Aluminium
wire
should
be
avoided.
Thermo-compression bonding is recommended
though thermo-sonic bonding may be used
providing the ultrasonic content of the bond is
minimized. Bond force, time and ultrasonic's are all
critical parameters. Bonds should be made from
the bond pads on the die to the package or
substrate. All bonds should be as short as possible.
void formation in
a nitrogen atmosphere is
recommended. The gold-tin eutectic (80% Au
20% Sn) has a melting point of approximately
280ºC (Note: Gold Germanium should be avoided).
The work station temperature should be 310ºC +/-
10ºC. Exposure to these extreme temperatures
should be kept to minimum. The collet should be
heated, and the die pre-heated to avoid excessive
thermal shock. Avoidance of air bridges and force
impact are critical during placement.
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015024
Power Amplifier, 8 W
14.5 - 17.5 GHz
Rev. V5
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-015024-DIE 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| MAAP-015024-DIEEV1 | TE | Dual Sided Bias Architecture | 获取价格 |
|
| MAAP-015024-DIEEV2 | TE | Dual Sided Bias Architecture | 获取价格 |
|
| MAAP-015024-DIER | TE | Dual Sided Bias Architecture | 获取价格 |
|
| MAAP-015024-V3 | TE | Power Amplifier, 8 W | 获取价格 |
|
| MAAP-015024_15 | TE | Power Amplifier | 获取价格 |
|
| MAAP-015030-DIE | TE | Power Amplifier, 13 W | 获取价格 |
|
| MAAP-015030-DIE | MACOM | Power Amplifier, 13 W | 获取价格 |
|
| MAAP-015030-DIEEV1 | TE | Power Amplifier, 13 W | 获取价格 |
|
| MAAP-015030-DIEEV2 | TE | Power Amplifier, 13 W | 获取价格 |
|
| MAAP-015030_15 | TE | Power Amplifier, 13 W | 获取价格 |
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