MAAPSM0008 [TE]
1-Watt Power Amplifier 5 - 6 GHz; 1瓦功率放大器5 - 6 GHz的
| 型号： | MAAPSM0008 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 1-Watt Power Amplifier 5 - 6 GHz |
| 文件： | 总6页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1-Watt Power Amplifier
5 - 6 GHz
V 1.1
MAAPSM0008
Features
Functional Schematic
·
·
·
·
·
U-NII and Hiperlan Applications
Saturated Output Power 30.5 dBm at +7.0 V
Power Added Efficiency 40 Percent
No External RF Matching
Pin 16
N/C
N/C
N/C
N/C
4-mm FQFP-N, 16-Lead Package
Pin 1
N/C
N/C
Description
The MAAPSM0008 is a two -stage power amplifier
mounted in a standard outline, 16-lead, 4-mm FQFP-N
plastic package, designed specifically for the U-NII,
MMAC, and Hiperlan bands. The MAAPSM0008 has
fully matched 50 ohms input and output, eliminating
the need for external RF tuning components.
RFin
N/C
N/C
Vgg
RFout
N/C
M/A-COM fabricates the MAAPSM0008 using a self-
aligned gate MESFET process to realize high power
efficiency and small size. The process features full
passivation for performance and reliability.
N/C
Vdd
N/C
N/C
Pin Configuration
Ordering Information
Pin
Function
Descriptions
Part Number
Package
1, 3, 4 ,5 ,7,
8, 9, 12, 13,
14, 15, 16
NC
No connection
MAAPSM0008TR
MAAPSM0008TR-3000 MAAPSM0008 on 13 inch, 3000-piece reel
MAAPSM0008SMB MAAPSM0008 Sample Test Board
MAAPSM0008 on 7-inch, 1000-piece reel
2
6
RF
IN
RF input to the amplifier. DC
block on-chip. 50 ohm input.
Vdd
Positive voltage supply to
both stages
10
RFOUT
RF output of the amplifier.
DC block on-chip. 50 Ohm
output.
11
Vgg
Negative voltage supply to
the gates of both stages
Pad
GND
RF & DC ground
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com foradditional data sheets and product information.
1-Watt, 5 GHz Power Amplifier
MAAPSM0008
V 1.1
Electrical Specifications: TC = 40 °C, VDD = 7.0 V, IDQ = 360 mA
(unless otherwise specified)
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Typ. @
VDD + 5 V
Frequency
GHz
5.0
6.0
Input VSWR
Gain
F = 5.825 GHz, Pin = +14 dBm
F = 5.825 GHz, Pin = 0 dBm
F = 5.825 GHz
1.5:1
19.5
29.5
30.5
500
2.0:1
1.5:1
19.0
28.0
29.0
500
dB
dBm
dBm
mA
18.0
29.5
P1dB
Saturated Power
Drain Current at Psat
F = 5.825 GHz, Pin = +14 dBm
F = 5.825 GHz, Pin = +14 dBm
Output Power = 30.5 dBm
600
Harmonics 2¦
3¦
dBc
dBc
-40
-70
-40
-70
Thermal resistance
°C/W
dBm
31
40
31
38
Third-Order Intercept
Point
Stability
+3.0 V < V DD < +10.0 V, POUT < +15
dBm, VSWR < 6:1, -25 ºC < TC < 70
ºC, RBW = 3 MHz max. hold
All spurs < -70 dBc
Recommended Operating Conditions 1
Characteristic
Symbol
VDD
Unit
V
Min
4.5
Typ
7.0
-2.0
—
Max
Drain Voltage
Gate Voltage 2
Input Power
Gate Current
8.0
-1.0
15
VGG
V
-2.5
P
IN
dBm
mA
°C
IGG
TC
-4
1
+4
Case Temperature
-40
25
70
1. Operation outside of these ranges may reduce product reliability.
2. A 100 E-Series resistor should be used in the gate voltage line.
Operating The MAAPSM0008
The MAAPSM0008 is static sensitive. Please handle
with care. To operate the device, follow these steps.
1. Apply VGG = -2 V, V = 0 V.
DD
2. Ramp VDD to desired voltage, typically 5 to 7 V.
3. Adjust VGG to set IDQ, (approximately –2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn gate
voltage off last.
2
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com foradditional data sheets and product information.
1-Watt, 5 GHz Power Amplifier
MAAPSM0008
V 1.1
Application Information
Sample Board
C1
R1
Plated Vias
Plated
Vias
C2
Notes on board design
1. Sample board uses RO4350 e = 3.48 as dielec-
r
tric for circuit board. Dielectric thickness is not
critical but RFin and RFout transmission lines
should be 50 ohms (w = 22 mil for thickness = 10
mil).
2. Solder the exposed paddle on the back of the
package to the board. Proper attachment of the
exposed paddle is essential for RF and DC
ground in addition to providing a low thermal re-
sistance.
3. Case temperature (Tc) is measured as shown on
the application board drawing on the top circuit
board metal as close to the body of the package
as possible.
4. The board must provide adequate heat sinking to
accommodate the 2.5 W typically dissipated un-
der small signal conditions. Sample board uses
vias in the vicinity of the ground pad to provide a
suitable heat sink connected to the ground plane
of the board as shown above (recommend
thetaCA = 5 °C/W max).
5. Placement of C1, C2 and R1 are not critical but
use of 1206 for the bypass caps (C1 and C2) is
critical.
3
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com foradditional data sheets and product information.
1-Watt, 5 GHz Power Amplifier
MAAPSM0008
V 1.1
Typical Performance Curves
Gain Vs. Frequency
PIN = + 6 dBm, VDD = 7 V
Gain Vs. Frequency
PIN = + 6 dBm, VDD = 5 V
24
22
20
18
16
14
12
10
24
22
20
18
16
14
12
10
- 25 deg. C
50 deg. C
70 deg. C
- 25 deg. C
50 deg. C
70 deg. C
4.0
4.5
5.0
5.5
6.0
6.5
4.0
4.5
5.0
5.5
6.0
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Output Power Vs. Frequency
PIN = + 12 dBm, VDD = 7 V
Output Power Vs. Frequency
PIN = + 12 dBm, VDD = 5 V
32
30
28
26
24
32
30
28
26
24
- 25 deg. C
50 deg. C
70 deg. C
- 25 deg. C
50 deg. C
70 deg. C
4.0
4.5
5.0
5.5
6.0
6.5
4.0
4.5
5.0
5.5
6.0
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
PAE Vs. Frequency
PIN = + 12 dBm, VDD = 7 V
PAE Vs. Frequency
PIN = + 12 dBm, VDD = 5 V
45
40
35
30
25
45
- 25 deg. C
50 deg. C
70 deg. C
- 25 deg. C
50 deg. C
70 deg. C
40
35
30
25
4.0
4.5
5.0
5.5
6.0
6.5
4.0
4.5
5.0
5.5
6.0
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
4
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com foradditional data sheets and product information.
1-Watt, 5 GHz Power Amplifier
MAAPSM0008
V 1.1
Typical Performance Curves
Input Return Loss Vs. Frequency
PIN = + 12 dBm, VDD = 7 V
Input Return Loss Vs. Frequency
PIN = + 12 dBm, VDD = 5 V
-3
-6
-3
-6
-9
-9
-12
-15
-18
-21
-24
-27
-12
-15
-18
-21
-24
-27
- 25 deg. C
50 deg. C
70 deg. C
- 25 deg. C
50 deg. C
70 deg. C
4.0
4.5
5.0
5.5
6.0
6.5
4.0
4.5
5.0
5.5
6.0
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Dissipated Power vs. Case
Temperature
Output Power & Gain Vs. Input Power
Freq = 5.80 GHz, VDD = 7 V
35
4.5
4
3.5
3
2.5
2
1.5
1
30
25
20
15
Pout
Gain
0.5
0
1
3
5
7
9
11
13
15
0
25
50
75
100 125 150 175
Pin (dBm)
Tc (C)
1-dB Compression Vs. Frequency
VDD = 7 V, IDq = 0.360 A
P1dB, Gain Vs. Quiescent Bias
VDD = 7 V, Freq = 5.8 GHz
32
30
28
26
24
32
30
28
26
24
22
20
18
P1dB
P1dB
Gain
5.0
5.2
5.4
5.6
5.8
6.0
0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36
IDQ (A)
Pin (dBm)
5
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com foradditional data sheets and product information.
1-Watt, 5 GHz Power Amplifier
MAAPSM0008
V 1.1
4-mm FQFP-N, 16-Lead (MLP)
Package, Saw Singulated
Dim
Measurement (mm)
Nom.
A
A2
D
Min.
0.80
Max.
1.00
A
A1
A2
b
0.90
0.02
16
A1
0
0.05
1.00
0.38
-
1
2
0.80
0.23
-
0.88
0.30
E
3
D
4.00 basic
2.15
4
D2
e
2.05
2.25
PIN #1
IDENTIFIER
0.65 basic
4.00 basic
2.15
16 x b
E
-
-
D2
E2
L
2.05
2.25
0.45 typ.
0.55 typ.
0.65 typ.
e
Note: See JEDEC MO-220A VGGC Issue B for additional
3 x e
E2
dimensional and tolerance information.
L
e
3 x e
Handling Procedures
Absolute Maximum Ratings1
Please observe the following precautions to avoid
damage to the MAAPSM0008:
Parameter
Max Input Power (5 - 6 GHz)
Operating Voltages
Absolute Maximum
+ 15 dBm
+10 volts
Static Sensitivity
-40 °C to +70 °C
+150 °C
Operating Temperature
Channel Temperature
Storage Temperature
Gallium arsenide integrated circuits are ESD sensitive
and can be damaged by static electricity. Use proper
ESD precautions when handling t hese devices.
-40 °C to +150 °C
1. Exceeding any one or combination of these limits may cause
permanent damage.
6
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com foradditional data sheets and product information.
相关型号：
©2020 ICPDF网 联系我们和版权申明