MABC-001000-DP00TL [TE]
GaN Bias Controller/Sequencer Module;
| 型号： | MABC-001000-DP00TL |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN Bias Controller/Sequencer Module |
| 文件： | 总7页 (文件大小：876K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MABC-001000-DP000L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V1
Features
Robust GaN Protection at Any Power Up/Power
Down Sequence
Fixed Gate Bias Voltage with Pulsed Drain Bias
Voltage. Add-On Module Allows for Gate Pulsing
Open Drain Output Current of ≤ 200 mA for
External MOSFET Switch Drive
Internal Thermistor or External Temperature
Sensor Voltage for Gate Bias Sum
30 dB Typical EMI/RFI Rejection at All I/O Ports
6.60 x 22.48 mm2 Package with 1 mm Pitch SMT
Leads
Functional Schematic
Target ≤ 500 ns Total Switch Transition Time
Gate Bias Output Current ≤ 50 mA for Heavy RF
Compression
GND GND
14 13
1
2
3
4
5
GFB
NC
12 ENS
11 P4V
10 NC
-
RoHS* Compliant and 260°C Reflow Compatible
+
-
+
GCO
GCI
9
8
SWG
VDS
Description
VGS
V_REG
6
7
The MABC-001000-DP000L is a bias controller that
provides proper gate voltage and pulsed drain
voltage biasing for a device under test (DUT).
Applicable DUT’s would be depletion-mode GaN
(Gallium Nitride) or GaAs (Gallium Arsenide) power
amplifiers or HEMT devices.
GND
NC
Pin Configuration1
Pin No. Label
Function
Gate Voltage (-) Feedback
No Connect
1
2
GFB
NC
3
4
5
6
GCO
GCI
VGS
NC
Gate Voltage (-) Control Output
Gate Voltage (-) Control Input
Gate (-) Supply Voltage
No Connect
The module also provides bias sequencing so that
pulsed drain voltage cannot be applied to a DUT
unless the negative gate bias voltage is present.
7
8
9
10
11
12
13
14
GND
VDS
SWG
NC
P4V
ENS
GND
GND
Ground
The applications section of this datasheet will show
how the module can be implemented for the
following two applications:
Drain (+) Supply Voltage
Driver Output to MOS Switch Gate
No Connect
Auxiliary +4.3 VDC Output
MOS Switch Enable TTL
Ground
Application Option 1: Fixed negative gate
biasing with pulsed drain biasing.
Application Option 2: Pulsed negative gate
biasing with pulsed drain biasing.
Ground
1. Unused package pins must be left open and not connected to
ground.
Ordering Information2
Both of these applications will recommend the
external circuitry and p-Channel Power MOSFET.
Part Number
Packaging
Tray
The MABC-001000-DP000L module can also be
installed onto an MABC-001000-PB1PPR evaluation
board for evaluation, test, and characterization
purposes.
MABC-001000-DP000L
MABC-001000-DP00TL
MABC-001000-PB1PPR
Tape & Reel
Gate and Drain Pulsing
Evaluation Board
2. Reference Application Note M513 for reel size information.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MABC-001000-DP000L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V1
Electrical Characteristics: TA = 25°C
Symbol Parameter
Conditions
Min
10
-
Typ
50
14
-6
Max
Unit
V
VDS
IDS
Supply Voltage, Positive
Supply Current, Positive
Supply Voltage, Negative
Supply Current, Negative
70
-
mA
V
VGS
IGS
-8
-
0
-
-3
mA
VENL
VENH
IENS
ENS Input Voltage, Low
0
2
-
0
3.3
0.3
V
V
ENS Input Voltage, High
4.3
ENS Input Current
40
-
-
-
uA
V
VGTH
VDTH
Input, Gate Feedback Threshold to VGS
Input, Drain Feedback Threshold
-
2.7
-
65% VDS
V
VGC
Output Voltage, Pulsed/Fixed Gate
-8
-
-3.5
50
0
-
V
Output Voltage, Pulsed/Fixed Gate Ripple
(Peak-to-peak)
VGCR
mV
IGC
ROFF
RON
ION
Output Gate Current, Peak
-
-
-
-
50
4M
1.2
100
-
mA
Ω
Output Drive, Open Drain, OFF State
Output Drive, Open Drain, ON State
Output Drive, Current, ON State
-
-
VDS = 50 V
Temp. = +85°C
Ω
200
mA
Recommended Operating Conditions
Absolute Maximum Ratings
Parameter
Min.
Max.
Parameter
Typical
Supply (+) Voltage, VDS
Supply (-) Voltage, VGS
0 V
-10 V
-0.3 V
-10 V
0 V
+60 V
0 V
Supply (+) Voltage, VDS
Supply (-) Voltage, VGS
+12 V to +55 V
-8 V to -2 V
Logic Voltage, ENS, GSE
Analog (-) Voltage, GCI, GFB
Switch Driver Voltage, SWG
Switch Driver Sink Current, SWG
Lead Soldering Temp (10 s)
Operating Temperature
+4.5
Logic Voltage, ENS
0 V to +4.3 V
-8 V to -2 V
0 V
Analog (-) Voltage, GCI, GFB
Switch Driver Sink Current, SWG
Operating Temperature
+75 V
-200 mA
+260°C
+85°C
+150°C
-1 mA to -200 mA
-40°C to +85°C
-
-
-40°C
-65°C
Storage Temperature
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MABC-001000-DP000L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V1
Timing Characteristics: TA = 25°C
Symbol Parameter
Conditions
Min
Typ
Max
Unit
tD1
Open Drain ON Propagation Delay3
-
100
-
ns
RPULL-UP = 700 Ω
VDS = 50 V
IR = 71 mA avg.
Switch Disconnected
tD3
Open Drain OFF Propagation Delay3
Open Drain Rise Time4
-
-
-
70
115
60
-
-
-
ns
ns
ns
tRISE1
tFALL1
tD1
tD3
Open Drain Fall Time4
MOS Switch ON Propagation Delay3,5
MOS Switch OFF Propagation Delay3,5
MOS Switch Rise Time4,5
-
-
-
300
1.8
-
-
-
ns
µs
ns
tRISE1
400
VDS = 50 V
MOS CISS = 2780 pF
RDS,ON = 60 mΩ
tFALL1
tD2
MOS Switch Fall Time4,5
-
-
-
-
-
80
-
-
-
-
-
µs
ns
ns
ns
ns
Gate Bias ON Propagation Delay3,5
Gate Bias OFF Propagation Delay3,5
Gate Bias Rise Time4,5
100
200
500
400
tD4
tRISE2
tFALL2
Gate Bias Fall Time4,5
3. Propagation delay is measured from 90% of the TTL signal to 10% of the signal of interest.
4. Rise and fall times are measured between 10% and 90% of the steady state signal.
5. Parameter was measured with MABC-001000-PB1PPR sample board. MAGX-L21214-650L00 was used as the DUT.
Timing Diagrams
+5V
ENS
0
+50V
0
+50V
SWG
90%
10%
90%
10%
0
VDD (Q1)6
-3V
90%
10%
90%
10%
-8V
GCO
RF
tD1
t D2
t D4
tRISE1
t
RISE2
t FALL2
t D3
t FALL1
6. Q1 refers to an external p-Channel HEXFET that pulses the drain of the DUT. See Applications Section for more information.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MABC-001000-DP000L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V1
Applications Section
Functional Description
The MABC-001000-DP000L GaN Bias Controller/
Sequencer Module circuitry provides proper
sequencing and generation of the gate voltage and
pulsed drain voltage for a device under test (DUT).
Reference the Product View and Pin Configuration
table on page 1. The basic functions of the circuits
within the module are described as follows:
Pin 9 (SWG) MOS Switch Driver Output
○
An N-Channel MOSFET develops the
pulsed signal (SWG) to drive the
resistive divider network for the gate of an
external p-Channel HEXFET as shown in
Figure 1 on page 5. The input signal for the
internal MOSFET is provided by the output
from the sequencing circuits.
Overhead Voltages for the Circuits within the
MABC-001000-DP000L Module
Sequencing Circuits
○
Pin 8 (VDS) is the Drain (+) Supply Voltage
that provides the input voltage to a low drop-
out linear regulator (VREG). This supplies
the positive voltage for the circuits within the
module. It also provides the Auxiliary
+4.3 V Output to Pin 11 (P4V).
○
A voltage comparator circuit senses if the
negative gate voltage is present as an input
on Pin 1 (GFB) - Gate Voltage (-) Feedback.
○
A logic circuit provides the switched input
enable signal for the N-Channel MOSFET.
The following 3 signals must be at correct
levels to generate the enable logic
signal:
○
Pin 5 (VGS) is the Gate (-) Supply Voltage
that is also used to supply the negative
voltage for the circuits within the module.
Pin 12 (ENS) MOS Switch Enable TTL
Negative gate voltage (GFB) is present
The internal positive voltage output is
present from V_REG
Negative Gate Voltage for the Device Under
Test (DUT)
○
A voltage follower op-amp circuit provides a
low impedance output to Pin 3 (GCO) Gate
Voltage (-) Control Output. Pin 3 (GCO)
output is applied to the gate terminal of a
DUT as shown in Figure 1 on page 5.
○
The reference voltage for the voltage
follower is provided by the Pin 4 (GCI) Gate
Voltage (-) Analog Input. This input
reference voltage is developed by an
external potentiometer/ resistive divider
circuit as shown in Figure 1 on page 6. It is
recommended to use the -8 V to -3 V
voltage that is also applied to Pin 5 (VGS).
○
Reference: The external potentiometer is
adjusted to set the gate voltage Pin 3 (GCO)
to the DUT. Alternative voltage inputs such
as a temperature compensation circuit or a
Digital-to-Analog (DAC) converter could also
be supplied to Pin 4 (GCI).
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MABC-001000-DP000L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V1
Applications Section
Module Layout Guidelines
Application Option 1:
Reference the Product View, Pin Configuration
Table on page 1, and the Recommended Landing
Pattern on page 7.
Fixed Negative Gate Biasing with Pulsed
Drain Biasing
Figure
1
shows
a
block diagram of the
MABC-001000-DP000L module with the
recommended external components to support this
application option. See Table 1 for component
recommendations and values.
The following recommendations should be followed
when the MABC-001000-DP000L module is used to
bias a high-power RF device or amplifier. The input
and output locations were determined so that the
layout and signal routing could be optimized when
+50 V
interfacing with
assembly.
a
high-power amplifier
R2
1
R1
9
3
R3
VR1
MABC-001000-
DP000L
4
Q1
The negative gate voltage input and outputs are
located on the left side of the module and should
be located as close as possible to the gate bias
R4 R5
5
-8 V
TTL
8
6
pads
on
the
high-power
amplifier
CSTORAGE
assembly.
The positive pulsed voltages are located on the
right side of the module and should be located
as close as possible to the external MOSFET
switch. The MOSFET switch drain should be
located as close as possible to the drain bias
pads on the high-power amplifier assembly. The
charge storage capacitors should be
located as close as possible to the MOSFET
switch source terminal pads.
DUT
RFIN
RFOUT
CIN
COUT
Figure 1. Fixed Gate/Pulsed Drain Biasing
Part
Value
MFG
MFG P/N
ERJ-2GEJ272X
R1
2.7 kΩ Panasonic
R2,R3 1.02 kΩ
R4,R5 402 Ω
Vishay CRCW25121K02FKEGHP
The module ground pads are located at Pins 7,
13, and 14.
Vishay
Bourns
CRCW2512402RFKEG
3224W-1-103E
VR1
Q1
10 kΩ
Route all signal lines and ground returns to be
as short as possible and implement a ground
plane on the back of the printed wiring board
(PWB) if that option is available to the
designer. Following these layout criteria will
minimize circuit parasitics that degrade the
performance of the pulsed signal.
P-Channel
MOSFET
IR
IRF5210SPBF
Table 1. Recommended Parts List for Fixed
Gate/Pulsed Drain Biasing
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MABC-001000-DP000L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V1
Applications Section
Application Option 2:
Pulsed Negative Gate Biasing with
Pulsed Drain Biasing
A block diagram showing a typical application of
the MABC-001000-PB1PPR sample board is
shown in Figure 2 below. Figures 3 and 4 show
layouts of the MABC-001000-PB1PPR sample
board with/without the MABC-001000-DP000L
module installed.
The additional external circuitry on the
MABC-001000-PB1PPR sample board provides
the added capability of pulsed gate biasing. A full
schematic, layout, and bill of materials are
available upon request.
Figure 3. Populated MABC-001000-PB1PPR
Evaluation Board
+50 V
TTL
-8 V
DUT
RFIN
RFOUT
VDD
TTL
-8V
MABC-001000-
PB1PPR
VG_A VD_PULSED
VD_PULSED
VG_B
MABC-001000-
PB1PPR
RFOUT
-8V
TTL
VDD
RFIN
DUT
-8 V
TTL
+50 V
(a)
(b)
Figure 2. Pulsed Gate/Pulsed Drain Biasing:
(a) North Biasing; (b) South Biasing
Figure 4. MABC-001000-PB1PPR with
MABC-001000-DP000L Mounted
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
MABC-001000-DP000L
GaN Bias Controller/Sequencer Module
Dual Supply: -8 to -3 V, +12 to +55 V
Rev. V1
Physical Dimensions6,7,8
Recommended Landing Pattern6
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
This module is sensitive to electrostatic discharge
(ESD) and can be damaged by static electricity.
Proper ESD control techniques should be used
when handling these HBM class 1B devices.
7. All dimensions are in inches.
8. Reference Application Note M538 for lead-free solder reflow
recommendations.
9. Plating is 100% Sn over BeCu.
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport
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