MADP-011028-14150T [TE]
High Power PIN Diode;
| 型号： | MADP-011028-14150T |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | High Power PIN Diode 二极管 |
| 文件： | 总9页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
Features
Functional Schematic
3 Terminal LPF Broadband Shunt Structure
50 MHz - 12 GHz Broadband Frequency
>100 W Peak Power Handling
< 0.1 dB Shunt Insertion Loss
>19 dB Shunt Isolation
< 35°C/W Thermal Resistance
Lead-Free 1.5 x 1.2 mm 6-lead DFN Package
RoHS* Compliant and 260oC Reflow
Description
The MADP-011028 is a lead-free 1.5 x 1.2 mm DFN
surface mount plastic packaged that provides both
low and high signal frequency operation from
50 MHz to 12 GHz. The higher breakdown voltage
and lower thermal resistance of the PIN diode
provides peak power handling in excess of 100 W.
Pin Configuration3
This device is ideally suitable for usage in higher
incident power switches, phase shifters, attenuators,
Pin No.
Pin Name
Description
and limiter microwave circuits over
a
broad
frequency where higher performance surface mount
diode assemblies are required.
1
2
3
4
5
6
RFIN
GND
GND
GND
GND
RFOUT
RF Input
Ground
Ground
Ordering Information1,2
Ground
Part Number
Package
Ground
RF Output
MADP-011028-14150T
MADP-011028-000SMB
3000 piece reel
Sample board
7
Paddle4
Ground
3. M/A-COM Technology Solutions recommends connecting
unused package pins to ground.
4. The exposed pad centered on the package bottom must be
connected to RF, DC, and thermal ground.
1. Reference Application Note M513 for reel size information.
2. All RF Sample boards include 5 loose parts.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
Electrical Specifications: TA = +25°C
Parameter
Test Conditions
+50 mA D.C.
Units
V
Min.
0.7
—
Typ.
0.9
Max.
1.1
Forward Voltage
Reverse Leakage Current
Total Capacitance5
-200 V D.C.
ηA
pF
|- 20|
0.24
3.4
|-1000|
0.30
4.4
-50 V @ 1 MHz
+10 mA @ 1 GHz
—
Series Resistance6
Ω
—
Parallel Resistance6
-Vdc = -40 V, @ 100 MHz
KΩ
—
500
—
+If = 10 mA / -Ir = -6 mA
(50% Control Voltage, 90% Output Voltage)
Minority Carrier Lifetime
µS
—
—
2.0
35
3.0
—
C.W. Thermal Resistance
( Infinite Heat Sink at Thermal
Ground Plane)
IHigh = 4 A, Ilow = 10 mA @ 10 kHz
+If = 50 mA @ 1 GHz
ºC/W
Power Dissipation7,8
( Infinite Heat Sink at Thermal
Ground Plane)
W
—
—
4.3
Insertion Loss
Isolation
F = 1 GHz, -Vdc = -10 V
dB
dB
-0.05
-18.5
F = 1 GHz, +Ibias = +10 mA
-16.5
5. Ct ( Total Capacitance ) = CJ ( Junction Capacitance ) + Cp ( Parasitic Package Capacitance ).
6. Rs and Rp are measured on an HP4291A Impedance Analyzer.
7. De-rate power dissipation linearly by -28.6 mW/ºC to 0 W @ +175ºC: Pd (T) = Pd (+ 25ºC) - ∆P = Pd (+ 25º) - (28.6 mV/ºC) (∆T).
8. PD = ∆Tj / Θ or PD=(IF + IRF) 2 (Rs), where IF is the forward bias DC current and IRF is the forward bias RMS RF current.
Absolute Maximum Ratings9,10
Parameter
Absolute Maximum
D.C. Forward Voltage @
+250 mA
1.2 V
Handling Procedures
Please observe the following precautions to avoid
damage:
D.C. Forward Current
D.C. Reverse Voltage
Junction Temperature11
Operating Temperature
Storage Temperature
Re-flow Temperature
250 mA
|-200V|
Static Sensitivity
+175°C
These devices are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these Class 2 devices.
-65°C to +125°C
-65°C to +150°C
+260°C for 360 seconds
9. Exceeding any one or combination of these limits may cause
permanent damage to this device.
10. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
11. Operating at nominal conditions with TJ ≤ +140°C will ensure
MTTF > 1 x 10E6 hours.
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
500 - 5000 MHz Parts List13
PCB Layout
Part
C1
Value
62 pF
Case Style
0402
0402
0402
0402
0402
C2, C3
FB1
R1
100 pF
470 Ω @ 1 GHz
150 Ω
L1
82 nH
13. Max DC voltage with recommended components not to
exceed 100 V.
Assembly Recommendations
PCB Schematic
Devices may be soldered using standard
Pb60/Sn40, or RoHS compliant solders. Leads
are plated NiPdAuAg to ensure an optimum
solderable connection.
For recommended Sn/Pb and RoHS soldering
profile See Application Note M538 on the MACOM
website.
Cleanliness and Storage
These devices should be handled and stored in a
clean environment. Ends of the device are
NiPdAuAg plated for greater solderability. Exposure
to high humidity (>80%) for extended periods may
cause the surface to oxidize. Caution should be
taken when storing devices for long periods.
General Handling
12. R1 is not needed when using the recommended ferrite FB1.
Device can be handled with tweezers or vacuum
pickups and are suitable for use with automatic
pick-and-place equipment.
3
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
Typical 1 GHz Parametric Curves
Series Resistance vs. Forward Current
Capacitance vs. Reverse Voltage
1000
100
10
0.35
0.30
0.25
0.20
0.15
1
0.1
0.00
0.02
0.04
0.06
0.08
0.10
0
10
20
30
40
Forward Bias (A)
Reverse Bias (V)
Parallel Resistance vs. Reverse Voltage
100000
10000
1000
0
10
20
30
40
Reverse Bias (V)
4
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
Typical RF Small Signal Performance Curves
Return Loss
Insertion Loss
0
-10
-20
-30
-40
-50
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
0 V
10 V
50 V
0 V
10 V
50 V
0
2
4
6
8
0
2
4
6
8
Frequency (GHz)
Frequency (GHz)
Isolation
-10
-15
-20
-25
-30
10 mA
25 mA
50 mA
-35
0
2
4
6
8
Frequency (GHz)
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
Lead-Free 1.5 x 1.2 mm 6-Lead DFN†
7
39
NOTES:
1. REFERENCE JEDEC MO-153-AB FOR ADDITIONAL DIMENSIONAL AND
TOLERANCE INFORMATION.
2. ALL DIMENSIONS SHOWN AS INCHES/MM.
†
Reference Application Note S2083 for lead-free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 1 requirements.
Plating is NiPdAuAg.
6
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
Applications Section
Schematic of High Power SP2T Shunt Switch using MADP-011028-14150T PIN Diodes
F = Octave Bandwidth from 1 to 12 GHz
Pinc = +40 dBm CW
Pinc = +50 dBm, 10 µS PW, 1 % Duty
½
L = 11.807 / ( εeff * F * 4 ) inches, θ = β * L = ( 2 π / λ ) * L = 90 °
Frequency is in GHz, εeff is Effective Dielectric Constant of Transmission Line Medium
RF State
B1 Bias
B2 Bias
J0-J1 Low Loss &
J0-J2 Isolation
-50 V @ 0 mA
+1 V @ +20 mA
J0-J2 Low Loss &
J0-J1 Isolation
+1 V @ +20 mA
-50 V @ 0 mA
7
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
Applications Section
Schematic of 3 Stage Limiter using MADP-011028-14150T
F = 1000 - 8,000 MHz
Pinc = +47 dBm CW
Pinc = +50 dBm, 10 µS P.W., 1 % Duty
Part
PN
Case Style
Description
Quantity
D1
MADP-011028-14150T
ODS-1415
Input PIN Diode
1
1
1
1
1
1
D2
D3
L1
MADP-011023-14150T
ODS-1415
ODS-1415
0402
2nd Stage PIN Diode
3rd Stage PIN Diode
RF Choke / DC Return
DC Block
MADP-011023-14150T
33 nH
27 pF
27 pF
C1
C2
0402
0402
DC Block
8
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MADP-011028-14150T
High Power PIN Diode
50 MHz - 12 GHz
Rev. V1
Microwave Model of MADP-011027-14150T
1
2
3
1
2
Ls
Ls
Cj
Rj
Cpkg/2
Cpkg/2
3
Rj = Rs ( Forward Bias Current )
Rj = Rp ( Reverse Bias Voltage )
Parameter
Value
8.0E-14 F
4.0E-10 H
0.9 Ω
Cpackage
Lbond=Ls
Rs
Rp
5E+5 Ω
9
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
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