MAGX-000035-015000-V1 [TE]
GaN on SiC HEMT Pulsed Power Transistor;
| 型号： | MAGX-000035-015000-V1 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN on SiC HEMT Pulsed Power Transistor |
| 文件： | 总7页 (文件大小：791K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
Features
MAGX-000035-015000 (Flanged)
GaN on SiC Depletion Mode Transistor
Common-Source Configuration
Broadband Class AB Operation
Thermally Enhanced Package (Flanged: Cu/W,
Flangeless: Cu)
RoHS* Compliant
+50V Typical Operation
MTTF = 600 years (TJ < 200°C)
Primary Applications
Commercial Wireless Infrastructure
(WCDMA, LTE, WiMAX)
Air Traffic Control Radar - Commercial
Weather Radar - Commercial
Military Radar - Military
Public Radio
MAGX-000035-01500S (Flangeless)
Industrial, Scientific and Medical
SATCOM
Instrumentation
Description
The MAGX-000035-01500X is
a
gold-metalized
unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
today’s demanding application needs.
Ordering Information
The MAGX-000035-01500X is constructed using a
thermally enhanced flanged (Cu/W) or flangeless
(Cu) ceramic package which provides excellent
thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme
mismatched load conditions unparalleled with older
semiconductor technologies.
Part Number
Description
MAGX-000035-015000
Flanged, Bulk Packaging
MAGX-000035-01500S Flangeless, Bulk Packaging
Sample Board
MAGX-L20035-015000
(1.2 - 1.4 GHz, Flanged)
Sample Board
MAGX-L20035-01500S
(1.2 - 1.4 GHz, Flangeless)
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
Electrical Specifications1: Freq. = 1.2 - 1.4 GHz, TA = 25°C
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: VDD = 50 V, IDQ = 15 mA, 1 ms Pulse, 10% Duty
Output Power
PIN= 0.5 W
PIN= 0.5 W
PIN= 0.5 W
PIN= 0.5 W
PIN= 0.5 W
PIN= 0.5 W
POUT
GP
15.0
17.7
15.5
63
-
W
dB
%
dB
-
Power Gain
14.8
-
-
Drain Efficiency
Droop
ηD
55
-
Droop
VSWR-S
VSWR-T
0.1
0.4
-
Load Mismatch Stability
Load Mismatch Tolerance
-
5:1
-
10:1
-
-
Electrical Characteristics: TA = 25°C
Parameter
DC Characteristics
Test Conditions
Symbol Min.
Typ.
Max.
Units
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics
Input Capacitance
VGS = -8 V, VDS = 175 V
VDS = 5 V, ID = 2 mA
VDS = 5 V, ID = 500 mA
IDS
VGS (TH)
GM
-
-
-3
-
750
-2
-
µA
V
-5
0.35
S
VDS = 0 V, VGS = -8 V, F = 1 MHz
CISS
COSS
CRSS
-
-
-
4.4
1.9
0.2
-
-
-
pF
pF
pF
Output Capacitance
VDS = 50 V, VGS = -8 V, F = 1 MHz
VDS = 50 V, VGS = -8 V, F = 1 MHz
Reverse Transfer Capacitance
Correct Device Sequencing
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (+50V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
1. Electrical Specifications measured in MACOM RF evaluation board.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
Absolute Maximum Ratings2,3,4
Parameter
Absolute Max.
PIN (nominal) + 3 dB
+65 V
Input Power
Drain Supply Voltage, VDD
Gate Supply Voltage, VGG
Supply Current, IDD
-8 V to 0 V
800 mA
10.3 W
Power Dissipation (PAVG), Pulsed @ 85°C
MTTF (TJ<200°C)
600 years
Junction Temperature5
200°C
Operating Temperature
-40°C to +95°C
-65°C to +150°C
See solder reflow profile
150 V
Storage Temperature
Mounting Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
500 V
2. Operation of this device above any one of these parameters may cause permanent damage.
3. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime.
4. For saturated performance it is recommended that the sum of (3*VDD + abs(VGG)) <175 V.
5. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN))
Typical transient thermal resistances:
1 ms pulse, 10% duty cycle, ӨJC = 5.0°C/W
For TC = 85°C,
TJ = 132°C @ 50 V, 520 mA-pk, POUT = 17.0 W, PIN = 0.5 W
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
Test Fixture Assembly (1.2 - 1.4 GHz, 1 ms Pulse, 10% Duty, VDD = 50 V, Idq = 15 mA)
Test Fixture Impedances
F (GHz)
1.2
ZIF (Ω)
ZOF (Ω)
2.5 + j3.5
2.7 + j3.9
3.1 + j4.2
1.4 + j3.5
1.3 + j3.8
1.8 + j4.0
1.3
1.4
Parts List
Reference Designator
Part
Vendor
C4
0402, 5.1 pF, ±0.1 pF
0603, 6.8 pF, ±0.1 pF
0603, 82 pF, ±10%
0603, 100 pF, ±10%
ATC
C15
C2
ATC
ATC
C16
C1, C10
C8
ATC
0402, 1000 pF, 100 V, 5%
0603, 30 pF, ±10%
ATC
ATC
C13
C14
C17
0805, 1 µF, 100 V, ±20%
0402, 12 pF, ±10%
ATC
ATC
100 µF, 160 V, Electrolytic Capacitor
Do Not Populate
Panasonic
C3, C6, C7, C9, C11, C12, R2
-
R3
240 Ω, 0603, 5%
1.0 Ω, 0402, 5%
1.0 Ω, 1206, 5%
10 Ω, 0402, 5%
0402, 3.9 nH, 2%
0402, 0.0 Ω Resistor
SMA Connector
Panasonic
Panasonic
Panasonic
Panasonic
Coilcraft
L1, R1
R4
R5
L3, L6
L2, R6
J1, J2
Panasonic
Tyco Electronics
Contact factory for Gerber file or additional circuit information.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
Application Section
Typical Performance Curves
1.2 - 1.4 GHz, 1 ms Pulse, 10% Duty, VDD = 50 V, Idq = 15 mA, TA = 25°C
Output Power and Gain Vs. Input Power
Drain Efficiency Vs. Output Power
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
Outline Drawing MAGX-000035-015000 (Flanged)
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Rev. V1
Outline Drawing MAGX-000035-01500S (Flangeless)
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
相关型号：
©2020 ICPDF网 联系我们和版权申明