MASW-000822-1277OT [TE]
HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications; HMICTM PIN二极管SP2T 10瓦开关为0.05 - 6.0 GHz的更高功率的应用
| 型号： | MASW-000822-1277OT |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications |
| 文件： | 总5页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MASW-000822-1277OT
HMICTM PIN Diode SP2T 10 Watt Switch for
0.05 - 6.0 GHz Higher Power Applications
Rev. V5
Features
Functional Schematic
•
•
Exceptional Broadband Performance
Suitable for Higher Power WiMax & WLAN
Applications
•
•
•
Lower Loss:
Tx = 0.40 dB @ 3.8 GHz, 22mA
Rx = 0.60 dB @ 3.8 GHz, 22mA
Higher Isolation:
Rx-Tx = 21 dB @ 3.8 GHz
Tx-Rx = 26 dB @ 3.8 GHz
Higher RF Input Power = 10 W C.W.
( Tx-Ant Port )
•
•
Higher IIP3 = 65 dBm ( Tx-Ant Port ).
Lower EVM (OFDM):
< 1.0% @ 8W Pin, ( Tx-Ant Port )
Lead-Free 3 mm 16-Lead PQFN Package
100% Matte Tin Plating over Copper
Halogen-Free “Green” Mold Compound
RoHS* Compliant and 260°C Reflow Compatible
•
•
•
•
Pin Configuration 1
Pin
Function
Pin
Function
1
2
3
4
5
6
7
8
N/C
N/C
Tx
9
N/C
Rx
Description
10
11
12
13
14
15
16
MA-COM’s MASW-000822-12770T is a Broadband,
high linearity, common anode PIN diode SPDT
switch in a lead-free 3 mm 16-lead PQFN package.
The MASW-00822-1277OT is ideally suited for 0.05
- 6.0 GHz applications, including WiMax & WLAN.
N/C
N/C
N/C
Ant
N/C
N/C
N/C
N/C
N/C
N/C
N/C
This SP2T switch offers excellent isolation to loss
ratio for both Tx and Rx states. The PIN diode
provides exceptional 10 W C.W power handling
coupled with 65 dBm IIP3 for maximum switch
performance @ 3.8GHz.
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
This MASW-000822-1277OT incorporates a PIN
diode die fabricated with M/A-COM’s patented
Silicon-Glass HMICTM process. This chip features
two silicon pedestals embedded in a low loss, low
dispersion glass. The diodes are formed on the top
of each pedestal. The topside is fully encapsulated
with silicon nitride and has an additional polymer
passivation layer. These polymer protective coatings
prevent damage and contamination during handling
and assembly.
Ordering Information 2
Part Number
Package
MASW-000822-1277OT
MASW-000822-001SMB
13 inch, 3000 piece reel
Sample Board
2. Reference Application Note M513 for reel size information.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-000822-1277OT
HMICTM PIN Diode SP2T 10 Watt Switch for
0.05 - 6.0 GHz Higher Power Applications
Rev. V5
Electrical Specifications: TA = 25°C, PIN = 0 dBm, Z0 = 50 Ω
Parameter
Conditions
Units
Min.
Typ.
Max.
Rx = +5.0 V @ +22 mA, Tx =+12V @ 0 mA
2.3 - 2.7 GHz
—
—
—
0.55
0.60
0.80
0.70
0.75
0.90
Insertion Loss, Rx
dB
3.3 - 3.8 GHz
4.9 - 5.9 GHz
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA
2.3 - 2.7 GHz
—
—
—
0.35
0.40
0.50
0.45
0.55
0.60
Insertion Loss, Tx
Isolation, Tx to RX
Isolation, Rx to TX
Input Return Loss Tx
Input Return Loss Rx
dB
dB
dB
dB
dB
3.3 - 3.8 GHz
4.9 - 5.9 GHz
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA
2.3 - 2.7 GHz
27.0
24.5
21.0
29.5
26.5
21.5
—
—
—
3.3 - 3.8 GHz
4.9 - 5.9 GHz
Rx = +5.0 V @ +22 mA, Tx =+12V @ 0 mA
2.3 - 2.7 GHz
22.5
19.5
17.5
24.5
21.5
17.5
—
—
—
3.3 - 3.8 GHz
4.9 - 5.9 GHz
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA
2.3 - 2.7 GHz
—
—
—
17
18
18
—
—
—
3.3 - 3.8 GHz
4.9 - 5.9 GHz
Rx = +5.0 V @ +22 mA, Tx =+12V @ 0 mA
2.3 - 2.7 GHz
—
—
—
17
18
18
—
—
—
3.3 - 3.8 GHz
4.9 - 5.9 GHz
Electrical Specifications: F = 3.5 GHz, TA = 25°C, Z0 = 50 Ω 3,4,5
Parameter
Conditions
Units
Min.
Typ.
Max.
Tx Input P0.1dB
Tx Input P1dB
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Tx To Antenna
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Tx To Antenna
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Pin = + 30 dBm
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Pin = + 30 dBm
dBm
dBm
dBc
dBc
—
—
—
—
40
45
—
—
—
Tx 2nd Harmonic
Tx 3rd Harmonic
-68
-84
Tx Input
3rd Order Intercept Point
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Pin = + 10 dBm
F1 = 3.500 GHz, F2 = 3.510 GHz
dBm
—
65
—
Tx C.W. Input Power
Rx C.W. Input Power
Tx EVM (OFDM)
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, F= 4.0 GHz
Rx = +5.0 V @ +22 mA, Tx =+12V @ 0 mA, F= 4.0 GHz
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Pin = +39 dBm
dBm
dBm
%
—
—
—
—
—
40
33
—
0.8
Tx EVM (OFDM)
Tx = +5.0 V @ +22 mA, Rx =+12V @ 0 mA, Pin = +40 dBm
%
—
—
1.2
( 10-90% RF Voltage)
Tx = +5.0 V@ +22 mA, Rx =+12V @ 0 mA
1MHz Rep Rate in Modulating Mode
Tx RF Switching Speed
ns
<500
—
3. Data taken at device RF leads.
4. Typical PIN diode forward voltage = +0.8 V @ 10 mA, +0.85 V @22 mA.
5. Typical PIN diode reverse voltage = +12.0 V
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-000822-1277OT
HMICTM PIN Diode SP2T 10 Watt Switch for
0.05 - 6.0 GHz Higher Power Applications
Absolute Maximum Ratings 6
Rev. V5
Cross Section View of M/A-Com PCB
@ TA = +25 °C (unless otherwise specified)
Parameter
Absolute Maximum
+ 100 mA
Forward Current
Reverse Voltage
-100 V
Operating Temperature
Storage Temperature
Junction Temperature
Tx Incident C.W. Power
Tx Peak Incident Power
Rx Incident C.W. Power
-40 °C to +85 °C
-55 °C to +150 °C
+175 °C
10 W C.W.
20 W, 3 µS P.W., 1% Duty
2 W C.W.
6. Exceeding these limits may cause permanent damage.
D.C. Bias to RF Truth Table
RF State
TTL & D.C. Bias Conditions
Voltage at Common Anode
Low Loss Tx-Ant &
Isolation Tx-Rx
TTL = 1
+ 0.9 V
+ 5V @ 22 mA ( Tx ), + 12V @ 0 mA ( Rx )
Low Loss Ant-Rx &
Isolation Rx-Tx
TTL = 0
+ 0.9 V
+ 5V @ 22 mA ( Rx ), + 12V @ 0 mA ( Tx )
Driver and SP2T Schematic with Positive Voltage 7,8,9,10,11
Ant
DC Block
LBias
R5
+5 V
180 Ω
Bypass
DC Block
DC Block
TX
RX
SP2T
Bypass
LBias
LBias
Bypass
MADR-008888-000100
Driver
Logic Input
Ground
7. Forward Bias Diode Voltage, ∆Vf @ 22 mA = + 0.9 V.
8. Reverse Bias Diode = | - ( +12 V - +0.9 V ) | = | - 11.1 | V.
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-000822-1277OT
HMICTM PIN Diode SP2T 10 Watt Switch for
0.05 - 6.0 GHz Higher Power Applications
Rev. V5
Typical Performance Curves: TA = 25°C, Z0 = 50 Ω
Insertion Loss
Isolation
-15
0.0
-20
-25
-30
-35
-40
TX
RX
-0.2
-0.4
-0.6
-0.8
-1.0
TX
RX
-45
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Frequency (GHz)
EVM
Tx and RX Return Loss
1.2
-20
1.1
1.0
0.9
0.8
0.7
0.6
TX
RX
SPDT Series T/R Switch
System EVM Baseline
-25
-30
-35
-40
0.5
15
20
25
30
35
40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency (GHz)
Incident Power (dBm)
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MASW-000822-1277OT
HMICTM PIN Diode SP2T 10 Watt Switch for
0.05 - 6.0 GHz Higher Power Applications
Rev. V5
Tx Diode Junction Temperature vs. C.W. Input Power
@ 4.0 GHz , Tj = 175°C
Handling Procedures
Please observe the following precautions to avoid
damage:
350
325
300
275
250
Static Sensitivity
These devices are rated at Class 1B Human Body.
Proper ESD control techniques should be used
when handling these devices.
225
Max Tj
(40.1 dBm)
200
175
150
125
100
75
50
25
0
20
25
30
P
35
40
45
(dBm)
IN
This device is not for saturation power application. Exceeding
power dissipation maximum rating might result in device failure.
Lead-Free 3 mm 16-Lead PQFN†
† Reference Application Note S2803 for lead-free solder reflow recommendations.
Meets JEDEC moisture sensitivity level 1 requirements.
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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