MASW-004103-1365_V4 [TE]

HMICTM Silicon PIN Diode SP4T Switch; HMICTM硅PIN二极管开关SP4T
MASW-004103-1365_V4
型号: MASW-004103-1365_V4
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

HMICTM Silicon PIN Diode SP4T Switch
HMICTM硅PIN二极管开关SP4T

二极管 开关
文件: 总8页 (文件大小:335K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MASW-004103-1365  
HMICTM Silicon PIN Diode SP4T Switch  
50 MHz - 20 GHz  
Rev. V4  
Features  
Specified from 50 MHz to 20 GHz  
Usable up to 26 GHz  
Low Insertion Loss  
High Isolation  
Low Parasitic Capacitance and Inductance  
RoHS Compliant Surmount™ Package  
Rugged, Fully Monolithic  
Glass Encapsulated Construction  
Up to +38 dBm C.W. Power Handling1 @ +25°C  
Silicon Nitride Passivation  
Functional Schematic  
Polymer Scratch Protection  
J4  
J3  
Description  
The MASW-004103-1365 is  
a
Surmount™  
broadband monolithic SP4T switch using series and  
shunt connected silicon PIN diodes. This part is  
designed for use as a moderate signal, high  
performance switch in applications up to 20 GHz.  
J2  
J5  
This Surface Mount  
chipscale configuration is  
optimized for broadband performance with minimal  
associated parasitics usually associated with hybrid  
MIC designs incorporating beam lead and PIN  
diodes that require chip and wire assembly.  
J1  
Pin Configuration 2  
The MASW-004103-1365 is fabricated using M/A-  
COM Technology Solutions patented HMIC™  
(Heterolithic Microwave Integrated Circuit) process,  
US Patent 5,268,310. This process allows the  
incorporation of silicon pedestals that form series  
and shunt diodes or vias by imbedding them in low  
loss, low dispersion glass. By using small spacing  
between elements, this combination of silicon and  
glass gives HMIC devices low loss and high isolation  
performance through low millimeter frequencies.  
Pin  
Function  
J1  
J2  
RFC  
RF1  
RF2  
RF3  
RF4  
J3  
J4  
J5  
2. The exposed pad centered on the chip bottom must be  
connected to RF and DC ground.  
Selective backside metalization is applied producing  
a Surface Mount device. The topside is fully  
encapsulated with silicon nitride and has an  
additional polymer layer for scratch and impact  
Ordering Information  
Part Number  
Package  
protection.  
These protective coatings prevent  
damage to the junction and the anode airbridge  
during handling and assembly.  
MASW-004103-13650G  
50 piece gel pack  
MASW-004103-13655P  
MASW-004103-13650P  
MASW-004103-001SMB  
500 piece reel  
3000 piece reel  
1. Power Handling Testing performed @ 2GHz  
Sample Test Board  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MASW-004103-1365  
HMICTM Silicon PIN Diode SP4T Switch  
50 MHz - 20 GHz  
Rev. V4  
Electrical Specifications: TA = 25°C, PIN = 0 dBm, Z0 = 50 , 20mA/-10V  
Parameter  
Conditions  
Units  
Min.  
Typ.  
Max.  
6 GHz  
13 GHz  
20 GHz  
0.5  
0.8  
1.2  
0.6  
1.0  
1.5  
Insertion Loss  
dB  
6 GHz  
13 GHz  
20 GHz  
48  
38  
29  
51  
39  
32  
Isolation  
dB  
dB  
dB  
6 GHz  
13 GHz  
20 GHz  
17  
13  
12  
21  
17  
16  
Input Return Loss  
6 GHz  
13 GHz  
20 GHz  
53.5  
41.5  
31.5  
Output to Output Isolation  
Input 0.1dB Compression Point  
IIP3  
2 GHz  
dB  
36  
0.5 GHz, 5 MHz Spacing, +20dBm  
1 GHz, 10 MHz Spacing, +20dBm  
2 GHz, 10 MHz Spacing, +20dBm  
60  
63  
64  
dBm  
Switching Speed3  
Voltage Rating4  
ns  
V
20  
80  
3. Typical Switching Speed measured from 10% to 90 % of detected RF signal driven by TTL compatible drivers.  
4. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 uA maximum @ -80 volts.  
Absolute Maximum Ratings 5,6  
Parameter  
Absolute Maximum  
-65 °C to +125 °C  
-65 °C to +150 °C  
+175 °C  
Handling Procedures  
Please observe the following precautions to avoid  
damage:  
Operating Temperature  
Storage Temperature  
Junction Temperature  
Applied Reverse Voltage  
Static Sensitivity  
|-80 V|  
These devices are rated at Class 1A Human Body.  
Proper ESD control techniques should be used  
when handling these devices.  
38dBm CW @ 2GHz, +25°C  
33dBm CW @ 20GHz, +25°C  
RF CW Incident Power  
Bias Current +25°C  
± 50 mA  
Max Operating Conditions for combination RF  
Pwr, DC Bias, & Temp: 33dBm CW @ 20mA per  
Diode @ +85ºC @ 2GHz  
5. Exceeding any one or combination of these limits may cause  
permanent damage to this device.  
6. M/A-COM Tech does not recommend sustained operation  
near these survivability limits.  
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383  
China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MASW-004103-1365  
HMICTM Silicon PIN Diode SP4T Switch  
50 MHz - 20 GHz  
Rev. V4  
Typical Performance Curves  
Insertion Loss @ 20m A -10V  
Isolation @ 20m A -10V  
RF Input to R F O utputs (J1 to J2, J3, J4, J5)  
RF Input to R F O utputs (J1 to J2, J3, J4, J5)  
0.0  
0
-20  
J1 TO J2  
J1 TO J3  
J1 TO J4  
J1 TO J5  
J1 TO J2  
J1 TO J3  
J1 TO J4  
J1 TO J5  
-0.5  
-40  
-1.0  
-1.5  
-2.0  
-60  
-80  
-100  
0
0
0
5
10  
15  
20  
25  
30  
30  
30  
0
5
10  
15  
20  
25  
30  
Frequency (GHz)  
Frequency (GHz)  
Input Return Loss @ 20m A -10V  
Output Return Loss @ 20m A -10V  
RF Input to R F O utputs (J1 to J2, J3, J4, J5)  
RF Input to R F O utputs (J1 to J2, J3, J4, J5)  
0
-10  
-20  
-30  
-40  
0
-10  
-20  
-30  
-40  
J1 TO J2  
J1 TO J3  
J1 TO J4  
J1 TO J5  
J1 TO J2  
J1 TO J3  
J1 TO J4  
J1 TO J5  
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
30  
Frequency (GHz)  
Frequency (GHz)  
MASW-004103-1365 Maximum Input Power Curve  
Baseplate Temperature fixed @ 25degC  
O utput to Output Isolation @ 20m A, -10V  
J2 to J3 and J4 to J5  
12  
10  
8
0
-20  
-40  
-60  
-80  
J2 TO J3  
J4 TO J5  
2GHz, 6.4W  
6
10GHz, 3.1W  
4
2
20GHz, 2W  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
5
10  
15  
20  
25  
Insertion Loss (dB)  
Frequency (GHz)  
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MASW-004103-1365  
HMICTM Silicon PIN Diode SP4T Switch  
50 MHz - 20 GHz  
Rev. V4  
Bias Control  
Optimal operation of the MASW-004103-1365 is achieved by simultaneous application of negative DC voltage  
and current to the low loss switching arm and positive DC voltage and current to the remaining switching arms  
as shown in the applications circuit below. DC return is achieved via R2 on the RFC path.  
In the low loss state, the series diode must be forward biased with current and the shunt diode reverse biased  
with voltage. In the isolated arm, the shunt diode is forward biased with current and the series diode is reverse  
biased with voltage.  
Driver Connections  
Control Level  
Condition  
of RF  
Output  
Condition  
of RF  
Output  
Condition  
of RF  
Output  
Condition  
of RF  
Output  
(DC Currents and Voltages)  
B2  
B3  
B4  
B5  
J1-J2  
J1-J3  
J1-J4  
J1-J5  
-15V at -20mA 7  
6V at +20mA  
Low Loss  
Isolation  
Isolation  
Isolation  
Isolation  
Low Loss  
Isolation  
Isolation  
Isolation  
Isolation  
Low Loss  
Isolation  
Isolation  
Isolation  
Isolation  
Low Loss  
6V at +20mA  
6v at +20mA  
6V at +20mA  
6V at +20mA  
6V at +20mA  
6V at +20mA  
-15V at -20mA 7  
6V at +20mA  
-15V at -20mA 7  
6V at +20mA  
6V at +20mA  
6V at +20mA  
-15V at -20mA 7  
6V at +20mA  
7. The voltage applied to the off arm can vary as long as 20mA is applied through the shunt diode on the off arm.  
Application Circuit 8,9,10,11,12  
Example:  
J1 to J2Low Loss  
R1 = 250  
R2 = 450Ω  
B2 = -15V  
B3, B4, B5 = 6V  
Notes:  
8. Assume Vf ~ 1V at 20mA  
9. R1 = 5V / 0.02A = 250; R2 = 9V / 0.02A = 450Ω  
10. PR1 = 0.02A x 0.02A x 250 = 0.1 W  
11. PR2 = 0.02A x 0.02A x 450 = 0.18 W  
12. Inductors are bias RF chokes. The operating band width of a broad-band PIN diode switch is often dependent on the bias compo-  
nents, particularly the RF bias chokes. It is suggested that the frequency response be checked with all the bias components attached  
before installing the PIN diode.  
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MASW-004103-1365  
HMICTM Silicon PIN Diode SP4T Switch  
50 MHz - 20 GHz  
Rev. V4  
Outline Drawing Footprint  
Units in µm  
Backside view shows the back metal that is the foot print of the chip and all dimension are +/-0.5um  
Ground radius is 200um centered on the I/O Pad.  
MASW-004103-1365  
DIM  
Inches  
mm  
MIN  
MAX  
MIN  
MAX  
1.630  
2.270  
0.150  
Width  
Length  
0.06220  
0.08740  
0.00394  
0.06417  
0.08937  
0.00591  
1.580  
2.220  
0.100  
Thickness  
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MASW-004103-1365  
HMICTM Silicon PIN Diode SP4T Switch  
50 MHz - 20 GHz  
Rev. V4  
Handling Procedures  
Attachment to a circuit board is made simple through the use of standard surface mount technology. Mounting  
pads are conveniently located on the bottom surface of these devices and are removed from the active junction  
locations. These devices are well suited for solder attachment onto hard and soft substrates. The use of  
80Au/20Sn, or RoHS compliant solders is recommended. For applications where the average power is 1W,  
conductive silver epoxy may also be used. Cure per manufacturers recommended time and temperature. Typi-  
cally 1 hour at 150°C.  
When soldering these devices to a hard substrate, a solder re-flow method is preferred. A vacuum tip pick-up  
tool and a force of 60 to100 grams applied to the top surface of the device while placing the chip is recom-  
mended. When soldering to soft substrates, such as Duroid, it is recommended to use a soft solder at the circuit  
board to mounting pad interface to minimize stress due to any TCE mismatches that may exist. Position the die  
so that its mounting pads are aligned with the circuit board mounting pads. Solder reflow should not be per-  
formed by causing heat to flow through the top surface of the die to the back. Since the HMIC glass is transpar-  
ent, the edges of the mounting pads can be visually inspected through the die after attachment is completed.  
Typical re-flow profiles for Sn60/Pb40 and RoHS compliant solders is provided in Application Note M538 ,  
“Surface Mounting Instructions“ and can viewed on the MA-COM Technology Solutions website @  
www.macomtech.com  
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MASW-004103-1365  
HMICTM Silicon PIN Diode SP4T Switch  
50 MHz - 20 GHz  
Rev. V4  
Pocket Tape Information  
Carrier Tape Dimensions  
.157 ± .004  
4.00 ± 0.10  
.157 ± .004  
4.00 ± 0.10  
.079 ± .002  
2.00 ± 0.05  
.069 ± .004  
Ф .059 ± .004 THRU  
1.75 ± 0.10  
1.5 ±  
+.012  
+0.30  
.138  
3.5 ± 0.05  
8.00 - 0.10  
.093 ± .002  
2.36 ± 0.05  
Ф 0.035  
Ф 0.89  
.012 ± .001  
0.30 ± 0.03  
THRU TYP.  
5° MAX.  
.012 ± .002  
0.30 ± 0.05  
POCKET DEPTH  
.066 ± .002  
1.80 ± 0.05  
Chip Orientation in Tape  
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  
MASW-004103-1365  
HMICTM Silicon PIN Diode SP4T Switch  
50 MHz - 20 GHz  
Rev. V4  
Reel Information  
A
INCHES  
MM  
DIM  
MIN.  
MAX.  
MIN.  
MAX.  
A
6.980  
7.019  
177.3  
178.3  
B
C
D
.059  
.504  
.795  
.098  
.520  
.815  
1.5  
2.5  
12.8  
20.2  
13.2  
20.7  
N
2.146  
.331  
—-  
2.185  
.337  
54.5  
8.4  
55.5  
8.55  
14.4  
W1  
W2  
.567  
—-  
8
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383 China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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