MASW20000 [TE]

GaAs SPDT Switch DC - 20 GHz; 砷化镓SPDT开关DC - 20 GHz的


型号：	MASW20000
厂家：	TE CONNECTIVITY
描述：	GaAs SPDT Switch DC - 20 GHz 砷化镓SPDT开关DC - 20 GHz的开关光电二极管
文件：	总2页 (文件大小：90K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GaAs SPDT Switch

DC - 20 GHz

MASW20000

V 2.00

GND RF

GND

Features

●

Very Broadband Performance

●

Low Insertion Loss, 1.75 dB Typical @ 18 GHz

High Isolation, 50 dB Typical @ 18 GHz

Fast Switching Time, 2 nS Typical

GND

RF1

GND

RF2

●

Reflective Configuration

Ultra Low DC Power Consumption

GND

●

Via Hole Grounding

A1 B2 B1 A2

Guaranteed Specifications @ +25°C

Frequency Range

Typical Performance

DC-20.0 GHz

INSERTION LOSS (dB)

Insertion Loss

DC-10.0 GHz

DC-18.0 GHz

DC-20.0 GHz

1.7 dB Max

2.1 dB Max

2.5 dB Max

2.0

1.5

1.0

0.5

0.0

VSWR

DC-10.0 GHz

DC-18.0 GHz

DC-20.0 GHz

1.60:1 Max

1.80:1 Max

2.00:1 Max

Isolation

DC-10.0 GHz

DC-18.0 GHz

DC-20.0 GHz

50 dB Min

42 dB Min

40 dB Min

ISOLATION (dB)

Operating Characteristics

Impedance

50 WNominal

Switching Characteristics

(10/90% or 90/10% RF)

rise, fall

2 ns Typ

(50% CTL to 90/10% RF)

3 ns Typ

20 mV Typ

on, off

Transients (in-Band)

VSWR

2.0

1.8

1.6

1.4

1.2

1.0

Input Power for 1 dB Compression

Control Voltages (Vdc)

0/-5

0.5-20 GHz

0.05 GHz

+25 dBm Typ

+18 dBm Typ

Input

Output

Intermodulation Intercept point (for two-tone input power up to +5 dBm)

Intercept Points

0.5-20 GHz

0.05 GHz

+59 dBm

+43 dBm Typ

+27 dBm Typ

FREQUENCY (GHz)

Control Voltages (Complimentary Logic)

Low

0 to -0.2 V @ 5 µA Max

-5 V @50 µA Max

Schematic

Die Size

0.083”x 0.035”X 0.004”

(2.10mm X 0.89mm X 0.10mm)

* Wafer level data.All specifications apply with 50 Wimpedance connected

to all RF ports, 0 and -5 Vdc control voltages.

** Loss change 0.0025 dB/°C. (From -55°C to +85°C)

V 2.00

Handling Precautions

Permanent damage to the MASW20000 may occur if the follow-

ing precautions are not adhered to:

TruthTable***

Control Inputs

Condition Of Switch

A1/B2

A2/B1

RF1

RF2

A. Cleanliness — The MASW20000 should be handled in a clean

environment. DO NOT attempt to clean unit after the

MASW20000 is installed.

V Hi

V Low

Off

V Low

V Hi

B. Static Sensitivity — All chip handling equipment and personnel

should be DC grounded.

VinLow

VinHi

0 to -0.2V

-5V

***For normal SPDT operation A1 is connected to B2 and A2 is connected to B1.

C. Transient — Avoid instrument and power supply transients

while bias is applied to the MASW20000. Use shielded signal

and bias cables to minimize inductive pick-up.

D. Bias —Apply voltage to either control port A1/B2 or A2/B1

only when the other is grounded. Neither port should be

allowed to ”float”.

Maximum Ratings

A. Control Voltage (A1/B2 or A2/B1): –8.5 Vdc

E. General Handling — It is recommended that the MASW20000

chip be handled along the long side of the die with a sharp

pair of bent tweezers. DO NOT touch the surface of the chip

with fingers or tweezers.

B. Max Input RF Power:

+34 dBm

C. Storage Temperature:

D. Max Operating Temperature:

–65°C to +175°C

+175°C

Mounting

The MASW20000 is back-metallized with Pd/Ni/Au (100/1,000/

30,000Å) metallization. It can be die-mounted with AuSn eutectic

preforms or with thermally conductive epoxy. The package sur-

face should be clean and flat before attachment.

BondPad Dimensions

Eutectic Die Attach:

Inches (mm)

A. A 80/20 gold/tin preform is recommended with a work surface

temperature of approximately 255°C and a tool temperature of

265°C. When hot 90/10 nitrogen/hydrogen gas is applied, tool

tip temperature should be approximately 290°C.

RF, RF1, RF2:

A1, A2, B1, B2:

0.004 x 0.004

(0.100 x 0.100)

0.004 x 0.004

(0.100 x 0.100)

B. DO NOT expose the MASW2000 to a temperature greater

than 320°C for more than 20 seconds. No more than 3

seconds of scrubbing should be required for attachment.

Epoxy Die Attach:

A. Apply a minimum amount of epoxy and place the

MASW20000 into position. A thin epoxy fillet should be visible

around the perimeter of the chip.

Die Size

Inches (mm)

B. Cure epoxy per manufacturer’s recommended schedule.

C. Electrically conductive epoxy may be used but is not required.

0.083 x 0.035 x 0.004

(2.10 x 0.89x 0.10)

Wire Bonding

A. Ball or wedge bond with 1.0 mil diameter pure gold wire. Gold

ribbon (3.0 mil X 0.5 mil) may also be used.Thermosonic wire

bonding with a nominal stage temperature of 150°C and a ball

bonding force of 40 to 50 grams or wedge bonding force of 18

to 22 grams is recommended. Ultrasonic energy and time

should be adjusted to the minimum levels to achieve reliable

wirebonds.

B. Wirebonds should be started on the chip and terminated on

the package.

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