MASW6030G [TE]
GaAs DPDT Switch DC - 6.0 GHz; 砷化镓双刀双掷开关DC - 6.0 GHz的
| 型号： | MASW6030G |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs DPDT Switch DC - 6.0 GHz |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RoHS
Compliant
GaAs DPDT Switch
DC - 6.0 GHz
MASW6030G
V3
Features
Pad Layout
• Low Insertion Loss, 0.5 dB Typical
• Fast Switching Speed, 4 ns Typical
• Ultra Low DC Power Consumption
• RoHS* Compliant
Description
MA/COM’s MASW6030G is a GaAs MMIC DPDT
switch die. The MASW6030G is ideally used where
low power consumption is required.
Typical applications include transmit / receive
switching, switch matrices and switched filter banks,
WLAN IEEE 802.11a and 802.11 b/g systems.
Other applications include cordless phones and
base stations.
Ordering Information
Die Size - Inches (mm)
0.048 x 0.038 x 0.010 (1.220 x 0.970 x 0.250)
Part Number
MASW6030G
Package
DIE 1
Bond Pad Dimensions
1. Die quantity varies.
Dimensions - Inches
(mm)
Bond Pad
Absolute Maximum Rating 2,3
RF1, RF6
RF2, RF3, RF4, RF5, A, B
GND
0.005 x 0.005 (0.130 x 0.150)
0.004 x 0.004 (0.100 x 0.100)
0.005 x 0.013 (0.130 x 0.320)
Parameter
Absolute Maximum
Control Value (A or B)
0/-8 V
+34 dBm
(0.5 - 6.0 GHz with 0/-8 V CTL)
Max Input RF Power
Schematic
Storage Temperature
-65°C to +175°C
+175°C
Max Operating Temperature
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. M/A-COM does not recommend sustained operation near
these survivability limits.
Truth Table 4,5
RF1 to
RF6 to
A
1
B
0
RF2
On
RF3
Off
RF4
On
RF5
Off
0
1
Off
On
Off
On
4. 0 = 0 to –0.2 V, 1 = -5 V.
5. When an RF output port is “Off” it is shorted to ground
through an “On” shunt MESFET.
*Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
GaAs DPDT Switch
DC - 6.0 GHz
MASW6030G
V3
Electrical Specifications: +25°C, 0/5 Vdc, 50 Ω
Parameter
Test Conditions
Units
Min.
Typ.
Max.
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
dB
dB
dB
dB
—
—
—
—
—
—
—
—
0.6
0.8
1.0
1.5
Insertion Loss 6
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
dB
dB
dB
dB
40
35
25
20
—
—
—
—
—
—
—
—
Isolation
VSWR
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
Ratio
Ratio
Ratio
Ratio
—
—
—
—
—
—
—
—
1.2:1
1.4:1
1.5:1
1.8:1
0.5 - 6.0 GHz, 0 / -5V, 0 / -8V
0.05 GHz, 0 / -5V, 0 / -8V
dBm
dBm
—
—
+27 / +33
+21 / +26
—
—
Input P-1dB
IP2
Two Tone Input Power up to +5 dBm
0.5 - 6.0 GHz
dBm
dBm
—
—
+68
+62
—
—
0.05 GHz
Two Tone Input Power up to +5 dBm
0.5 - 6.0 GHz
IP3
dBm
dBm
—
—
+45
+40
—
—
0.05 GHz
VIN Low (0 to –0.2 V)
VOUT High (-5 V @ 10 µA Typ to –8 V)
µA
µA
—
—
—
—
5
100
Control Current
T-rise, T-fall
TON, TOFF
10% to 90% RF and 90% to 10% RF
50% control to 90% RF, and 50% control to 10% RF
In Band
nS
nS
—
—
—
2
4
—
—
—
Transients
mV
15
6. Loss changes 0.0025 dB/°C (-55°C to +85°C.)
Typical Performance
Handling Procedures
Insertion Loss
Please observe the following precautions to avoid
damage:
2.0
Insertion Loss +30°C
Insertion Loss -55°C
Insertion Loss +85°C
1.5
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
1.0
0.5
0.0
0
1
2
3
4
5
6
7
Frequency (GHz)
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
GaAs DPDT Switch
DC - 6.0 GHz
MASW6030G
V3
VSWR @ 25°C
Mounting
2.0
The MASW6030G is back-metallized with Pd/Ni/Au
(100/1,000, 10,000 Å) metallization. It can be die-
mounted with AuSn eutectic preforms or with thermally
conductive epoxy. The package surface should be clean
and flat before attachment.
1.8
1.6
1.4
1.2
1.0
Eutectic Die Attach:
A. A 80/20 gold/tin preform is recommended with a
work surface temperature of approximately 255°C
and a tool temperature of 265°C. When not 90/10
nitrogen/hydrogen gas is applied, tool tip
temperature should be approximately 290°C.
0
1
2
3
4
5
6
7
B. DO NOT expose the MASW6030G to a temperature
greater than 320°C for more than 20 seconds. No
more than 3 seconds for scrubbing should be
required for attachment.
Frequency (GHz)
Isolation @ 25°C
80
Epoxy Die Attach:
70
60
50
40
30
20
A. Apply a minimum amount of epoxy and place the
MASW6030G into position. A thin epoxy fillet should
be visible around the perimeter of the chip.
B. Cure epoxy per manufacturer’s recommended
schedule.
C. Electrically conductive epoxy may be used by is not
required.
Wire Bonding
A. Ball or wedge with 1.0 mil diameter pure gold wire.
Thermosonic wirebonding with a nominal stage
temperature of 150°C and a ball bonding force of 40
to 50 grams or wedge bonding force o1 18 to 22
grams is recommended. Ultrasonic energy and time
should be adjusted to the minimum levels achieve
reliable wirebonds.
0
1
2
3
4
5
6
7
Frequency (GHz)
Handling Precautions
Permanent damage to the MASW6030G may occur if the
following precautions are not adhered to:
A. Cleaniness—MASW6030G should be handled in a
clean environment. DO NOT attempt to clean unit
after the MASW6030G is installed.
B. Wirebonds should be started on the chip and
terminated on the package.
B. Static Sensitivity—All chip handling equipment and
personnel should be DC grounded.
C. Transient—Avoid instrument and power supply
transients while bias is applied to the MASW6030G.
Use shielded signal and bias cables to minimize
inductive pick-up.
D. Bias—Apply voltage to either of the complementary
control ports only when the other is grounded. No
port should be allowed to “float”.
E. General Handling—It is recommended that the
MASW6030G chip be handled along the long side of
the die with a sharp pair of bent tweezers. DO NOT
touch the surface of the chip with fingers or
tweezers.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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