MASWSS0029TR [TE]

GaAs SPDT 2.8 V High Power Switch DC - 3.0 GHz; 砷化镓SPDT 2.8 V大功率开关DC - 3.0 GHz的
MASWSS0029TR
型号: MASWSS0029TR
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

GaAs SPDT 2.8 V High Power Switch DC - 3.0 GHz
砷化镓SPDT 2.8 V大功率开关DC - 3.0 GHz的

开关 光电二极管
文件: 总3页 (文件大小:119K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GaAs SPDT 2.8 V High Power Switch  
DC - 3.0 GHz  
MASWSS0029  
V2  
Features  
Functional Schematic  
Low Voltage Operation: 2.8V  
High IP3: +60 dBm  
Low Insertion Loss: 0.40 dB at 1.0 GHz  
High Isolation: 24.5 dB at 1.0 GHz  
SOT-26 Package  
PIN 1  
PIN 6  
RF1  
39 pF  
V1  
0.5 micron GaAs PHEMT Process  
GND  
RFC  
V2  
Description  
39 pF  
M/A-COM’s MASWSS0029 is a GaAs PHEMT  
MMIC single pole double throw (SPDT) high power  
switch in a low cost SOT-26 package.  
RF2  
39 pF  
The  
MASWSS0029 is ideally suited for applications  
where high power, low control voltage, low insertion  
loss, high isolation, small size and low cost are  
required.  
Pin Configuration  
Typical applications are for CDMA handset systems  
that connect separate transceiver and/or GPS func-  
tions to a common antenna, as well as other related  
handset and general purpose applications. This part  
can be used in all systems operating up to 3.0 GHz  
requiring high power at low control voltage.  
Pin No.  
Pin Name  
RF1  
Description  
RF Port 1  
1
2
3
4
5
6
GND  
RF2  
RF Ground  
RF Port 2  
V2  
Control 2  
The MASWSS0029 is fabricated using a 0.5 micron  
gate length GaAs PHEMT process. The process  
features full passivation for performance and  
reliability.  
RFC  
RF Common Port  
Control 1  
V1  
Absolute Maximum Ratings 2,3  
Ordering Information1  
Part Number  
MASWSS0029  
Package  
Bulk Packaging  
1000 piece reel  
Sample Test Board  
Parameter  
Absolute Maximum  
Input Power  
(0.5 - 3 GHz, 3 V Control)  
+35 dBm  
MASWSS0029TR  
MASWSS0029SMB  
Operating Voltage  
Operating Temperature  
Storage Temperature  
+8.5 volts  
-40°C to +85°C  
-65°C to +150°C  
1. Reference Application Note M513 for reel size information.  
2. Exceeding any one or combination of these limits may cause  
permanent damage to this device.  
3. M/A-COM does not recommend sustained operation near  
these survivability limits.  
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
GaAs SPDT 2.8 V High Power Switch  
DC - 3.0 GHz  
MASWSS0029  
V2  
Electrical Specifications: TA = 25°C, Z0 = 50 4  
Parameter  
Test Conditions  
Frequency  
Units Min.  
Typ.  
Max.  
DC – 1 GHz  
1 – 2 GHz  
2 - 3 GHz  
dB  
dB  
dB  
0.40  
0.50  
0.60  
0.65  
Insertion Loss5  
VC = 0 V, 2.8 V  
DC – 1 GHz  
1 – 2 GHz  
2 - 3 GHz  
dB  
dB  
dB  
23  
24.5  
18.5  
13  
Isolation  
VC = 0 V, 2.8 V  
VC = 0 V, 2.8 V  
DC – 2 GHz  
2 - 3 GHz  
dB  
dB  
20  
16  
Return Loss  
IP3  
VC = 0 V, 2.8 V  
Two Tone, +29 dBm Total Pin, 1 MHz Spacing  
0.05 - 3 GHz  
dBm  
60  
P0.1dB  
VC = 0 V, 3 V  
dBm  
nS  
34  
Trise, Tfall  
10% to 90% RF, 90% to 10% RF  
200  
50% control to 90% RF,  
and 50% control to 10% RF  
Ton, Toff  
nS  
250  
Transients  
In Band  
mV  
uA  
14  
Gate Leakage  
VC = 2.8 V  
60  
4. External DC blocking capacitors are required on all RF ports.  
5. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 - 500 MHz, 39 pF for 0.5 - 3.0 GHz.  
SOT-26 Plastic Package†  
Truth Table  
ANT– RF1  
ANT - RF2  
V1  
V2  
+2.8 V  
0 V  
0 V  
On  
Off  
Off  
On  
+2.8 V  
Handling Procedures  
Please observe the following precautions to avoid  
damage:  
Static Sensitivity  
Gallium Arsenide Integrated Circuits are sensitive  
to electrostatic discharge (ESD) and can be  
damaged by static electricity. Proper ESD control  
techniques should be used when handling these  
devices.  
Meets JEDEC moisture sensitivity level 1 requirements  
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
GaAs SPDT 2.8 V High Power Switch  
DC - 3.0 GHz  
MASWSS0029  
V2  
Typical Performance Curves  
Insertion Loss vs. Frequency, 25°C, 39 pF  
Isolation vs. Frequency, 25°C, 39 pF  
35  
1.0  
30  
25  
20  
15  
10  
5
0.8  
0.6  
0.4  
0.2  
0.0  
0
1.0  
1.5  
2.0  
2.5  
3.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Frequency (GHz)  
Frequency (GHz)  
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  

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