MASWSS0151TR-3000 [TE]

GaAs SPDT Switch DC - 3.0 GHz; 砷化镓SPDT开关DC - 3.0 GHz的
MASWSS0151TR-3000
型号: MASWSS0151TR-3000
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

GaAs SPDT Switch DC - 3.0 GHz
砷化镓SPDT开关DC - 3.0 GHz的

开关 射频 微波 光电二极管
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RoHS  
Compliant  
GaAs SPDT Switch  
DC - 3.0 GHz  
MASWSS0151  
V5  
Features  
Functional Schematic  
Low Insertion Loss: 0.65 dB @ 2.4 GHz  
Isolation: 24 dB @ 2.4 GHz  
Low Current Consumption: <10 μA @ -3 V  
Lead-Free SOT-363 Plastic Package  
100% Matte Tin Plating over Copper  
Halogen-Free “Green” Mold Compound  
260°C Reflow Compatible  
V1  
V2  
RFC  
RoHS* Compliant Version of the SW-438  
Description  
M/A-COM’s MASWSS0151 is a GaAs MMIC SPDT  
switch in a low cost, lead-free SC70 (SOT-363)  
surface mount plastic package. The MASWSS0151  
is ideally suited for applications that include  
transmit / receive switching for Bluetooth and WLAN  
equipment.  
RF1  
GND  
RF2  
Pin 1  
The MASWSS0151 can also be used in applications  
up to 500 mW in cellular, PCS, DCS1800, GSM,  
CDMA, and other analog and digital wireless  
communications systems.  
Pin Configuration  
Pin No.  
Function  
RF1  
Description  
RF Input / Output  
RF Ground  
The MASWSS0151 is fabricated using a 0.5 micron  
gate length GaAs PHEMT process. The process  
features full passivation for performance and  
reliability.  
1
2
3
4
5
GND  
RF2  
RF Input / Output  
Control 2 Input  
RF Common Input  
V2  
RFC  
6
V1  
Control 1 Input  
Ordering Information 1  
Absolute Maximum Ratings 2,3  
Part Number  
MASWSS0151  
Package  
Bulk Packaging  
3000 piece reel  
Parameter  
Absolute Maximum  
MASWSS0151TR-3000  
MASWSS0151SMB  
Input Power (1 GHz)  
Operating Voltage  
+32 dBm  
+8 Volts  
Sample Board  
(Includes 5 Samples)  
Operating Temperature  
Storage Temperature  
-40°C to +85°C  
-65°C to +150°C  
1. Reference Application Note M513 for reel size information.  
2. Exceeding any one or combination of these limits may cause  
permanent damage to this device.  
3. M/A-COM does not recommend sustained operation near  
these survivability limits.  
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.  
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
RoHS  
Compliant  
GaAs SPDT Switch  
DC - 3.0 GHz  
MASWSS0151  
V5  
Electrical Specifications: TA = 25°C, VC = 0 V / -3.0 V, Pin = 0 dBm, Z0 = 50 Ω 4  
Parameter  
Insertion Loss  
Isolation  
Test Conditions  
Units  
Min.  
Typ.  
Max.  
DC - 3.0 GHz  
dB  
0.65  
0.8  
DC - 1.0 GHz  
1.0 - 2.0 GHz  
2.0 - 3.0 GHz  
dB  
dB  
dB  
29  
31  
25  
21  
Return Loss  
DC - 1.5 GHz  
1.5 - 3.0 GHz  
dB  
dB  
22  
20  
P1dB  
IP2  
1 GHz  
dBm  
dBm  
dBm  
dBc  
dBc  
nS  
31  
81  
55  
-70  
-60  
20  
10  
5
10  
Two Tone, 10 dBm / Tone, 900 MHz, 5 MHz Spacing  
Two Tone, 10 dBm / Tone, 900 MHz, 5 MHz Spacing  
2.4 GHz, Pin = +20 dBm  
IP3  
2nd Harmonic  
3rd Harmonic  
Ton, Toff  
2.4 GHz, Pin = +20 dBm  
50% control to 90% RF, 50% control to 10% RF  
10% to 90% RF, 90% to 10% RF  
Trise, Tfall  
Control Current  
nS  
μA  
4. For positive voltage control, external DC blocking capacitors are required on all RF ports.  
Lead-Free SC70 (SOT-363)†  
Truth Table 5,6  
V1  
V2  
RFC-RF1  
RFC-RF2  
1
0
0
1
Off  
On  
On  
Off  
5. Differential voltage, V (state 1) - V (state 0), must be +2.1 V  
minimum and must not exceed 5 V.  
6. 0 = -5 V to 0 V, 1 = -2.9 V to 5 V.  
Handling Procedures  
Please observe the following precautions to avoid  
damage:  
Static Sensitivity  
Gallium Arsenide Integrated Circuits are sensitive  
to electrostatic discharge (ESD) and can be  
damaged by static electricity. Proper ESD control  
techniques should be used when handling these  
devices.  
Reference Application Note M538 for lead-free solder reflow  
recommendations.  
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  
RoHS  
Compliant  
GaAs SPDT Switch  
DC - 3.0 GHz  
MASWSS0151  
V5  
Typical Performance Curves vs. Frequency over Temperature  
Isolation  
Insertion Loss  
-40ºC  
+25ºC  
+85ºC  
-40ºC  
+25ºC  
+85ºC  
0.8  
60  
50  
40  
30  
0.7  
0.6  
0.5  
0.4  
20  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
F requency (GH z)  
Frequency (GH z)  
Return Loss  
-40ºC  
+25ºC  
+85ºC  
15  
20  
25  
30  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Frequency (GH z)  
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the  
product(s) or information contained herein without notice. M/A-COM makes  
no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose, nor does M/A-COM assume any liability  
whatsoever arising out of the use or application of any product(s) or  
information.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macom.com for additional data sheets and product information.  

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