MRF314 [TE]
RF POWER TRANSISTORS NPN SILICON; 射频功率晶体管NPN硅
| 型号： | MRF314 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | RF POWER TRANSISTORS NPN SILICON |
| 文件： | 总5页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF314/D
The RF Line
NP N S ilic on
M
R
F
3
1
4
R
F
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
s
. . . designed primarily for wideband large–signal driver and output amplifier
stages in the 30–200 MHz frequency range.
•
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 30 Watts
30 W, 30–200 MHz
RF POWER
TRANSISTORS
NPN SILICON
Minimum Gain = 10 dB
•
•
100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS
Rating
Symbol
Value
35
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V
CEO
V
CBO
V
EBO
65
4.0
3.4
I
C
Total Device Dissipation @ T = 25°C (1)
P
D
82
Watts
C
Derate above 25°C
0.47
W/°C
CASE 211–07, STYLE 1
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
2.13
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 30 mAdc, I = 0)
V
35
65
65
4.0
—
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 30 mAdc, V = 0)
V
(BR)CES
C
BE
Collector–Base Breakdown Voltage
(I = 30 mAdc, I = 0)
V
V
—
Vdc
(BR)CBO
(BR)EBO
C
E
Emitter–Base Breakdown Voltage
(I = 3.0 mAdc, I = 0)
—
Vdc
E
C
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
3.0
mAdc
CBO
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
20
—
80
—
(I = 1.5 Adc, V = 5.0 Vdc)
C
CE
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V = 30 Vdc, I = 0, f = 1.0 MHz)
C
—
30
40
pF
ob
CB
E
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
G
10
50
13.5
—
—
—
dB
%
PE
(V = 28 Vdc, P = 30 W, f = 150 MHz)
CC
out
Collector Efficiency
η
(V = 28 Vdc, P = 30 W, f = 150 MHz)
CC
out
Load Mismatch
ψ
(V = 28 Vdc, P = 30 W, f = 150 MHz,
No Degradation in Power Output
CC
out
VSWR = 30:1 all phase angles)
R2
R1
R
F
C
3
D
C
+
2
8
V
d
c
C
8
C
9
C
1
0
R
F
C
2
C
7
L
1
Z
2
R
F
O
U
T
P
U
T
C
1
R
F
I
N
P
U
T
Z
1
D
U
T
C
6
C
2
C
3
R
F
C
1
C
4
C
5
C1, C7 — 18 pF, 100 mil ATC
C2 — 68 pF, 100 mil ATC
C3, C6 — Johanson #JMC 5501
C4 — 270 pF, 100 mil ATC
C5 — 240 pF, 100 mil ATC
C8, C9 — 100 pF Underwood
C10 — 1.0 µF Tantalum
R1, R2 — 10 Ω, 1.0 W
RFC1 — 15 µH Molded Coil
RFC2 — 2 Turns, 2.5″ #20 Wire, ID = 0.2″
RFC3 — Ferroxcube VK200–19/4B
Z1 — Microstrip, 0.168″ W x 1.6″ L
Z2 — Microstrip, 0.168″ W x 1.2″ L
Board — Glass Teflon ε = 2.55
r
L1 — 2 Turns, 2.5″ #20 Wire, ID = 0.275″
Figure 1. 150 MHz Test Circuit
2
TYPICAL PERFORMANCE CURVES
5 5
4 5
3 5
3 0
5 0 MH z 7 0 MH z
2 5
5
0
M
H
z
1 0 0 MH z
f
=
3 0 MH z
2 0
2 00 MH z
f
=
3 0 M Hz
1 5 0 MH z
2 0 0 MH z
2 5
1 5
5
1 5
1 0
5
15 0 MH z
10 0 M Hz
70 M Hz
V
C C
=
2 8
V
V
C C
=
1 3 .5
V
0 .0 3
0
.
1
1
P , I NP UT P OWE R ( WATT S)
1
0
0 .0 4
0 .1
1
6
P , I NP UT P O WE R (WATTS )
i n
in
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
2 4
2 2
2 0
1 8
1 6
1 4
1 2
7 0
6 0
5 0
V
P
=
=
2 8
3 0
V
V
P
=
=
2 8
3 0
V
C C
C C
W
W
ou t
o ut
1 0
2 0
4 0
6 0
80 10 0
12 0 14 0 16 0 180 2 00 2 20
2
0
4 0
6 0
8
0
1
0
0
1
2
0
1
4
0
1
6
0
1
8
0
2
0
0
2
2
0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 4. Power Gain versus Frequency
Figure 5. Efficiency versus Frequency
3
0
1 00
7 0
1 50
f
5. 0
5. 0
5 0
3 0
=
2 00 MH z
1 0 .0
Z
i n
1 5 .0
=
5
.
0
2 0 .0
P
o ut
3 0 W, = V 28
C C
V
10 . 0
f
Z
Z *
OL
in
MHz
OHMS
OHMS
f
=
2 00 MH z
30
50
2. 4
1. 6
-
-
-
-
+
+
j 3. 4 18 .0
-
-
-
-
-
-
j1 2 . 1
1
5
0
j 2. 6 16 .5
j 0. 8 15 .0
j 0. 5 12 .9
j 0. 9 11. 9
j 1. 2 11. 5
j1 2 . 1
j11 . 8
j1 0 . 8
j9 . 4ă
j8 . 1ă
15 . 0
20 . 0
1 00
7 0
5 0
3 0
70
0. 8
0. 7
0. 9
1. 3
Z
*
O
L
10 0
15 0
20 0
Z
*
=
an d f r equ ency.
C
o
n
j
u
g
a
t
e
o
f
t
h
e
o
p
t
i
m
u
m
l
o
a
d
i
m
p
e
d
a
n
c
e
i
n
t
o
w
h
i
c
h
t
h
e
d
e
v
i
c
e
o
u
t
p
u
t
o
p
e
r
a
t
e
s
a
t
a g iven o u tp u t p o we r, v ol ta g e
O L
Figure 6. Series Equivalent Input/Output Impedance
4
PACKAGE DIMENSIONS
A
U
N O TE S :
1. D I MEN S I ON I N G A ND TO LE R AN C I N G P ER AN S I
Y 14. 5M, 198 2.
M
2. C O N TR O LL IN G D I MEN S I ON : I N CH .
M
1
Q
INCHES
DIM MIN MAX
MILLIMETERS
MIN
24. 39
9. 40
5. 82
5. 47
2. 16
3. 81
0. 11
MAX
25. 14
9. 90
7. 13
5. 96
2. 66
4. 57
0. 15
10. 28
50ꢀ ꢀ
4
A
B
C
D
E
H
J
0. 960
0. 370
0. 229
0. 215
0. 085
0. 150
0. 004
0. 395
40ꢀ ꢀ
0. 990
0. 390
0. 281
0. 235
0. 105
0. 108
0. 006
0. 405
50ꢀ ꢀ
B
R
2
3
D
K
M
Q
R
S
U
10. 04
40ꢀ ꢀ
S
K
_
_
_
_
0. 113
0. 245
0. 790
0. 720
0. 130
0. 255
0. 810
0. 730
2. 88
6. 23
3. 30
6. 47
20. 07
18. 29
20. 57
18. 54
S TY LE 1:
P IN 1. E MIT T ER
2. B AS E
3. E MI TT E R
J
C
4. C O LLE C TO R
H
E
SEATING
PLANE
CASE 211–07
ISSUE N
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
5
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