MRF316 [TE]
The RF Line NPN Silicon RF Power Transistor; 射频线NPN硅射频功率晶体管
| 型号： | MRF316 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | The RF Line NPN Silicon RF Power Transistor |
| 文件： | 总5页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF316/D
The RF Line
NP N S ilic on
M
R
F
3
1
6
R
F
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
. . . designed primarily for wideband large–signal output amplifier stages in the
30–200 MHz frequency range.
•
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 80 Watts
80 W, 3.0–200 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
Minimum Gain = 10 dB
•
•
•
Built–In Matching Network for Broadband Operation
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
35
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
65
4.0
Collector Current — Continuous
Collector Current — Peak
I
C
9.0
13.5
Total Device Dissipation @ T = 25°C (1)
Derate above 25°C
P
D
220
1.26
Watts
W/°C
C
CASE 316–01, STYLE 1
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
0.8
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 50 mAdc, I = 0)
V
35
65
65
4.0
—
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 50 mAdc, V = 0)
V
(BR)CES
C
BE
Collector–Base Breakdown Voltage
(I = 50 mAdc, I = 0)
V
V
—
Vdc
(BR)CBO
(BR)EBO
C
E
Emitter–Base Breakdown Voltage
(I = 5.0 mAdc, I = 0)
—
Vdc
E
C
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
5.0
mAdc
CBO
CB
E
ON CHARACTERISTICS
DC Current Gain
(I = 4.0 Adc, V = 5.0 Vdc)
C
h
10
—
—
80
—
FE
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
100
130
pF
ob
(V = 28 Vdc, I = 0, f = 1.0 MHz)
CB
E
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 7
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
NARROW BAND FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
Symbol
Min
Typ
Max
Unit
G
10
55
13
—
—
—
dB
%
PE
(V = 28 Vdc, P = 80 W, f = 150 MHz)
CC
out
Collector Efficiency
η
(V = 28 Vdc, P = 80 W, f = 150 MHz)
CC
out
Load Mismatch
ψ
(V = 28 Vdc, P = 80 W CW, f = 150 MHz,
No Degradation in Output Power
CC
out
VSWR = 30:1 all phase angles)
R2
R3
R
F
C
6
+
2
8
V
d
c
C
1
3
R
F
C
5
C 12
L
2
DUT
C
1
L1
R F
O U TPU T
R F
IN PU T
RFC 4
C8
C5
C
6
C
9
C
1
0
C
1
1
R
F
C
1
C
3
C
4
C
2
R FC2
R FC3
R
1
C
7
C1 — 22 pF 100 mil ATC
C2, C3 — 24 pF 100 mil ATC
L1 — 0.8″, #20 Wire
L2 — 1.0″, #20 Wire
C4, C11 — 0.8ā –ā 20 pF JMC #5501 Johanson
C5 — 200 pF 100 mil ATC
C6 — 240 pF 100 mil ATC
C7 — Dipped Mica 1000 pF
C8 — 0.1 µF Erie Red Cap
C9, C10, C12 — 30 pF 100 mil ATC
C13 — 1.0 µF Tantalum
RFC1, RFC4 — 0.15 µH Molded Coil
RFC2, RFC3 — Ferroxcube Bead 56–590–65–3B
RFC5 — 2.5″, #20 Wire, 1.5 Turns
RFC6 — Ferroxcube VK200–19/4B
R1 — 10 Ω, 1/2 W
R2, R3 — 10 Ω, 1.0 W
Figure 1. 150 MHz Test Amplifier
REV 7
2
TYPICAL PERFORMANCE CURVES
1 40
1 20
1 00
2 6
V
=
2 8
V
C
C
P
V
=
=
8 0
2 8
W
V
ou t
C C
2 2
1 8
1 4
1 0
6
f
=
30 M Hz
8 0
6 0
1 00 MH z
15 0 MH z
20 0 M Hz
5
0
M
H
z
4 0
2 0
0
0 .2
0 .3 0 .4 0. 5 0. 7
1
2
3
4
5
7
1 0
2 0
6 0
1
0
0
1
4
0
1 8 0
2 2 0
P , I NP UT P OWE R ( WATT S)
in
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 2. Output Power versus Input Power
Figure 3. Power Gain versus Frequency
1
3
0
1 20
P
=
6
8
W
P
=
8
W
i
n
in
6
4
W
W
W
11 0
9 0
7 0
5 0
3 0
1 00
8 0
6 0
4 0
2 0
4
2
W
W
2
W
f
=
1 5 0 MH z
2 8
f
=
1 00 MH z
2 8
1 2
1
6
2
0
24
1 2
1 6
2 0
2
4
V
C C
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(
V
O
L
T
S
)
V ,
C C
S
U
P
P
L
Y
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
1
1
0
P
i n
=
8
W
90
70
50
30
10
6
4
W
W
2
W
f
=
2 00 MH z
2 8
1
2
1
6
2
0
2
4
V
C C
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(
V
O
L
T
S
)
Figure 6. Output Power versus Supply Voltage
REV 7
3
0
1. 0
1
.
0
2 00
1 25
Z
2. 0
2 .0
i
n
1 00
1. 0
3. 0
3 .0
1 50
50
4 .0
1 75
2. 0
3. 0
f
=
30 M H z
1
7
5
2 00
1 50
12 5
V
C C
=
2 8 V, = P 8 0
ou t
W
10 0
4. 0
5. 0
6. 0
f
MH z
Z
O HMS
Z *
O L
O HMS
i n
3 0
5 0
1 .2
1 .1
-
-
+
+
+
+
+
j2 . 4 5 . 5
-
-
-
-
-
-
-
j6 . 8
Z
*
O L
j2 . 2 4 . 5
j0 . 7 2 . 7
j1 . 2 2 . 3
j1 . 6 2 . 0
j0 . 3 1 . 9
j0 . 8 2 . 0
j6 . 0
j3 . 5
j2 . 6
j1 . 7
j1 . 3
j0 . 9
1 00
1 25
1 50
1 75
2 00
0 .3
0 .6
0 .9
2 .2
0 .3
7. 0
8. 0
9. 0
50
f
=
3
0
M
H
z
Z
*
=
an d f r equ ency.
Co nj uga t e of t he op ti m u m lo a d im pe d an ce in t o wh ich t he d evi ce o ut p ut o pe ra t e s a t
a
g
i
v
e
n
o
u
t
p
u
t
p
o
w
e
r
,
v
o
l
t
a
g
e
O L
Figure 7. Series Equivalent Input–Output Impedance
REV 7
4
PACKAGE DIMENSIONS
F
D
4
N O TE S :
1. F LAN G E I S I SO LAT ED I N A LL S TY LE S.
R
Q
K
3
INCHES
DIM MIN MAX
MILLIMETERS
MIN
0. 960
0. 490
MAX
0. 990
0. 510
0. 300
0. 220
0. 120
0. 210
0. 730
0. 006
0. 440
0. 160
0. 170
0. 130
0. 130
0. 495
A
24. 38
12. 45
5. 97
5. 33
2. 16
5. 08
18. 29
0. 10
10. 29
3. 81
3. 81
2. 92
3. 05
11. 94
25. 14
12. 95
7. 62 0. 235
5. 58 0. 210
3. 04 0. 085
5. 33 0. 200
1
B
C
D
E
F
2
H
J
1
8
.
5
4
0
.
7
2
0
L
0. 15 0. 004
11. 17 0. 405
4. 06 0. 150
4. 31 0. 150
3. 30
3. 30 0. 120
12. 57 0. 470
K
L
B
C
J
N
Q
R
U
0. 115
E
N
H
A
S TY LE 1:
U
P IN 1. E MIT T ER
2. C O LLE C TO R
3. E MIT T ER
4. B AS E
CASE 316–01
ISSUE D
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 7
5
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