MRF321 [TE]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF321 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总5页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF321/D
The RF Line
NP N S ilic on
M
R
F
3
2
1
R
F
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
. . . designed primarily for wideband large–signal driver and predriver amplifier
stages in 200–500 MHz frequency range.
•
Guaranteed Performance at 400 MHz, 28 Vdc
Output Power = 10 Watts
10 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
Power Gain = 12 dB Min
Efficiency = 50% Min
•
•
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability
Computer–Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Rating
Symbol
Value
33
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
60
4.0
Collector Current — Continuous
Collector Current — Peak
I
C
1.1
1.5
Total Device Dissipation @ T = 25°C (1)
P
D
27
Watts
A
Derate above 25°C
160
mW/°C
CASE 244–04, STYLE 1
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
6.4
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 20 mAdc, I = 0)
V
33
60
60
4.0
—
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 20 mAdc, V = 0)
V
(BR)CES
C
BE
Collector–Base Breakdown Voltage
(I = 20 mAdc, I = 0)
V
V
—
Vdc
(BR)CBO
(BR)EBO
C
E
Emitter–Base Breakdown Voltage
(I = 2.0 mAdc, I = 0)
—
Vdc
E
C
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
1.0
mAdc
CBO
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
20
—
80
—
(I = 500 mA, V = 5.0 Vdc)
C
CE
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V = 28 Vdc, I = 0, f = 1.0 MHz)
C
—
10
12
pF
ob
CB
E
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
G
12
50
13
60
—
—
dB
%
PE
(V = 28 Vdc, P = 10 W, f = 400 MHz)
CC
out
Collector Efficiency
η
(V = 28 Vdc, P = 10 W, f = 400 MHz)
CC
out
Load Mismatch
ψ
(V = 28 Vdc, P = 10 W, f = 400 MHz,
No Degradation in Output Power
CC
out
VSWR = 30:1 all phase angles)
L
4
R
2
R
3
+
V
-
+
28
-
5
V
+
-
C
1
1
C
1
2
D
1
R
4
C
9
C
1
0
C
1
3
L
3
L
1
C
8
R F
O U TPU T
Z3
Z
4
DU T
R F
IN PU T
Z
1
Z
2
L
2
C5
R1
C
6
C
7
C
3
C
4
C
1
C
2
C1, C2, C3 — 1.0ā –ā 20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C10 — 0.1 µF Erie Redcap
C7 — 0.5ā –ā 10 pF Johanson Trimmer (JMC 5201)
C8 — 0.018 µF Vitramon Chip Capacitor
C9 — 200 pF UNELCO Capacitor
L3 — 6 Turns #20 Enamel, 1/4″ ID
L4 — Ferroxcube VK200–19/4B
R1 — 5.1 Ω, 1/4 Watt
R2 — 120 Ω, 1.0 Watt
R3 — 20 Ω, 1/2 Watt
R4 — 47 Ω, 1/2 Watt
C11, C12 — 680 pF Feedthru
Z1 — Microstrip 0.1″ W x 1.35″ L
Z2 — Microstrip 0.1″ W x 0.55″ L
Z3 — Microstrip 0.1″ W x 0.8″ L
Z4 — Microstrip 0.1″ W x 1.75″ L
C13 — 1.0 µF, 50 Volt Tantalum Capacitor
D1 — 1N4001
L1 — 0.33 µH Molded Choke with Ferroxcube Bead
L1 — (Ferroxcube 56–590–65/4B) on Ground End of Coil
L2 — 4 Turns #20 Enamel, 1/8″ ID
Board — Glass Teflon, ε = 2.56, t = 0.062″
R
Input/Output Connectors — Type N
Figure 1. 400 MHz Test Circuit Schematic
2
1 2
1 0
8
1 2
1 0
8
4 00
5 00
f
=
2
0
0
M
H
z
P
=
1
W
i
n
0
.
7
W
6
6
0 . 5
0 . 4
W
W
4
4
0 . 3
0 . 2
W
W
V
=
2
8
V
V
C C
=
2
8
V
C C
0. 1
W
2
1 00
2
2 00
3
0
0
4
0
0
500
6
0
0
0
3 00
6
0
0
9 00
1
2
0
0
1 5 0 0
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
P , I NP UT P O WE R (m W)
i n
Figure 2. Output Power versus Frequency
Figure 3. Output Power versus Input Power
1 2
1 0
8
2 2
1 8
1 4
1 0
6
P
V
=
1 0
2 8
W
o
=
V
C C
P
i n
=
0
.
5
W
0
.
3
5
W
6
4
f
=
4 00 MH z
3 0
2
1 0
2
1
4
1
8
2
2
2
6
2
0
0
3
0
0
4
0
0
5
0
0
V
C C
,
S
U
P
P
L
Y
V
O
L
T
A
G
E
(
V
O
L
T
S
)
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 4. Output Power versus Supply Voltage
Figure 5. Power Gain versus Frequency
3
0
4 00
- ā5
5
f
=
2
0
0
M
H
z
Z
i
n
-
ā
0
5
0
0
5
P = 1 0 W, V= 2 8
o C C
V
f
M Hz
Z
O hms
Z *
O L
O h ms
i
n
20 0
40 0
50 0
0
.
6
8
-
+
+
j0 . 7 51 4. 2
j2 . 7 ăă 9. 8
j4 . 3 ăă 9. 3
-
-
-
j2 2 Ă ă
j1 4 . 4
j1 3 Ă ă
0. 89
1. 3ă
10
15
50 0
40 0
Z
*
O L
20
25
f
=
=
2
0
0
M
H
z
Z
Z
*
*
C
o
n
j
u
g
a
t
e
o
f
t
h
e
o
p
t
i
m
u
m
l
o
a
d
i
m
p
e
d
a
n
c
e
i
n
t
o
w
h
i
c
h
t
h
e
d
e
v
i
c
e
o
u
t
p
u
t
o
p
e
r
a
t
e
s
a
t
a
g
i
v
e
n
o
u
t
p
u
t
p
o
w
e
r
,
O
L
v
=
o
l
t
a
g
e
a
n
d
f
r
e
q
u
e
n
c
y
.
O
L
Figure 6. Series Equivalent Impedance
4
PACKAGE DIMENSIONS
2
D
3
1
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
4
K
A
B
C
D
E
G
J
7
6
4
5
1
1
0
.
.
.
.
.
.
.
.
0
2
9
4
4
5
0
0
5
-
0
0
2
6
0
9
6
0
2
8
5
7
6
6
5
1
.
.
.
.
.
2
5
5
9
6
-
1
-
6
0
1
6
5
-
7
-
0. 278
0. 244
0. 590
0. 215
0. 055
0. 060
0. 003
0. 435
0
0
0
0
0
.
.
.
.
.
286
256
650
235
065
---
007
---
M
1
1
T
F
A
J
-
0
.
0
.
K
M
P
S
T
11
-
M
4
ꢀ
ꢀ
ꢀ
N
O
4
5
ꢀ
ꢀ
ꢀ
N
O
0
0
0
0
M
_
_
SEATING PLANE
-
-
0
4
9
1.
3.
1.
3.
2
2
7
6
7
5
7
8
-
-
-
8
5
5
.
.
.
.
0
50
28
70
45
C
P
8-32 NC 2A
U
S
3
1
2
.
.
.
0
.
1
1
1
0
1
0
.
0
5
U
0
.
1
1
WRENCH FLAT
E
B
S
T
Y
L
E
1
:
P
I
N
1
B
E
.
E
M
AS E
I
T
T
E
R
2
3
4
.
.
.
M
I
T
T
E
R
C
O
L
L
E
C
T
O
R
CASE 244–04
ISSUE J
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
5
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