MRF323 [TE]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
| 型号： | MRF323 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | RF POWER TRANSISTOR NPN SILICON |
| 文件： | 总5页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF323/D
The RF Line
NP N S ilic on
M
R
F
3
2
3
R
F
P
o
w
e
r
T
r
a
n
s
i
s
t
o
r
. . . designed primarily for wideband large–signal driver and predriver amplifier
stages in the 200–500 MHz frequency range.
•
Guaranteed Performance at 400 MHz, 28 V
Output Power = 20 Watts
20 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
Power Gain = 10 dB Min
Efficiency = 50% Min
•
•
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability
Computer–Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Rating
Symbol
Value
33
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CBO
V
EBO
60
4.0
Collector Current — Continuous
Collector Current — Peak
I
C
2.2
3.0
Total Device Dissipation @ T = 25°C (1)
P
D
55
Watts
C
Derate above 25°C
310
mW/°C
CASE 244–04, STYLE 1
Storage Temperature Range
THERMAL CHARACTERISTICS
T
stg
–65 to +150
°C
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
R
3.2
°C/W
θ
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 20 mAdc, I = 0)
V
33
60
60
4.0
—
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
C
B
Collector–Emitter Breakdown Voltage
(I = 20 mAdc, V = 0)
V
(BR)CES
(BR)CBO
(BR)EBO
C
BE
Collector–Base Breakdown Voltage
(I = 20 mAdc, I = 0)
V
V
—
Vdc
C
E
Emitter–Base Breakdown Voltage
(I = 2.0 mAdc, I = 0)
—
Vdc
E
C
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
2.0
mAdc
CBO
CB
E
ON CHARACTERISTICS
DC Current Gain
h
FE
20
—
80
—
(I = 1.0 Adc, V = 5.0 Vdc)
C
CE
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
1
ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted.)
C
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V = 28 Vdc, I = 0, f = 1.0 MHz)
C
—
20
24
pF
ob
CB
E
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
G
10
50
11
60
—
—
dB
%
PE
(V = 28 Vdc, P = 20 W, f = 400 MHz)
CC
out
Collector Efficiency
η
(V = 28 Vdc, P = 20 W, f = 400 MHz)
CC
out
Load Mismatch
ψ
(V = 28 Vdc, P = 20 W, f = 400 MHz,
No Degradation in Output Power
CC
out
VSWR = 30:1 all phase angles)
L
4
+
28
-
V
+
-
C
9
C1 0
C
8
C
1
1
L 3
C1 2
Z
3
Z4
R F O U TPU T
D
U
T
R F IN PU T
Z
1
Z
2
L
2
C5
R1
C
6
C
7
L
1
C
3
C
4
C
1
C
2
C1, C2, C6 — 1.0ā –ā 20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C8 — 0.1 µF Erie Redcap
C7 — 0.5ā –ā 10 pF Johanson Trimmer (JMC 5201)
C9, C10 — 680 pF Feedthru
C11 — 1.0 µF 50 Volt Tantalum
C12 — 0.018 µF Vitramon Chip Capacitor
L1 — 0.33 µH Molded Choke with Ferroxcube Bead
L1 — (Ferroxcube 56–590–65/4B) on Ground End
L2 — 6 Turns #20 Enamel, 1/4″ ID, Closewound
L3 — 4 Turns #20 Enamel, 1/8″ ID, Closewound
L4 — Ferroxcube VK200–19/4B
R1 — 5.1 Ω 1/4 Watt
Z1 — Microstrip 0.1″ W x 1.35″ L
Z2 — Microstrip 0.1″ W x 0.55″ L
Z3 — Microstrip 0.1″ W x 0.8″ L
Z4 — Microstrip 0.1″ W x 1.75″ L
Board — Glass Teflon ε = 2.56, t = 0.062″
r
Input/Output Connectors — Type N
Figure 1. 400 MHz Test Circuit Schematic
2
2 5
2 0
1 5
1 0
5
2 5
2 0
f
=
2 00 MH z
4 00
5
0
0
P
=
3
W
i
n
2. 5
2
W
1 5
1 0
5
W
1. 5
W
1
W
0. 7
0. 4
W
W
V
C
=
2 8
V
V
C
=
2
8
V
C
C
0
0
0
2 00
30 0
40 0
50 0
0
1
2
3
4
5
f , FR EQ UE NC Y ( M Hz)
P , I NP UT P O WE R (WATTS )
i n
Figure 2. Output Power versus Frequency
Figure 3. Output Power versus Input Power
2 4
2 0
1 6
1 2
8
2 2
1 8
1 4
1 0
6
P
V
=
2 0
2 8
W
P
i
=
1 .8
W
o
n
=
V
C
C
1 . 1
W
f
=
4 00 MH z
3 0
4
1 0
2
1 4
1
8
2
2
26
0
2 00
3 00
4 00
5 0 0
V
C
,
C
S UP PLY V OLTA GE ( VO LTS )
f , FRE Q UE NCY (M Hz)
Figure 4. Output Power versus Supply Voltage
Figure 5. Power Gain versus Frequency
3
0
4 00
-ā 5
5
4
5
0
f
=
2 00 MH z
Z
i
n
1
0
-
ā 1 0
5
0
0
5
4
5
0
5 00
40 0
Z
*
O L
1
1
0
5
f
=
2
0
0
M
H
z
P
o ut
=
2 0 W, V= 28
C C
V
f
M Hz
Z
O hm s
Z *
O L
O hms
i
n
20 0
40 0
45 0
50 0
0. 6ă
0. 71
1. 2ă
2. 3ă
-
+
+
+
j 0. 23 7. 2
j 1. 796. 0
j 3. 8ă5. 9
j 5. 5ă6. 2
-
-
-
-
j11 . 4
j6 . 8 7
j5 . 1 ă
j3 . 1 ă
2
2
0
5
Z
Z
*
*
= C onj ug ate of t he op t imu m lo a d im pe d an ce in t o wh ich t he d evi ce o ut p ut o pe ra t e s a t
v=ol t ag e an d f r equ ency.
a
g
i
v
e
n
o
u
t
p
u
t
p
o
w
e
r
,
O
L
O
L
Figure 6. Series Equivalent Impedance
4
PACKAGE DIMENSIONS
2
D
3
1
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
4
K
A
B
C
D
E
G
J
7
6
4
5
1
1
0
.
.
.
.
.
.
.
.
0
2
9
4
4
5
0
0
5
-
0
0
2
6
0
9
6
0
2
8
5
7
6
6
5
1
.
.
.
.
.
2
5
5
9
6
-
1
-
6
0
1
6
5
-
7
-
0. 278
0. 244
0. 590
0. 215
0. 055
0. 060
0. 003
0. 435
0
0
0
0
0
.
.
.
.
.
286
256
650
235
065
---
007
---
M
1
1
T
F
A
J
-
0
.
0
.
K
M
P
S
T
11
-
M
4
ꢀ
ꢀ
ꢀN
O
4
5
ꢀ
ꢀ
ꢀ
N
O
0
0
0
0
M
_
_
SEATING PLANE
-
-
0
4
9
1.
3.
1.
3.
2
2
7
6
7
5
7
8
-
-
-
8
5
5
.
.
.
.
0
50
28
70
45
C
P
8-32 NC 2A
U
S
3
1
2
.
.
.
0
.
1
1
1
0
1
0
.
0
5
U
0
.
1
1
WRENCH FLAT
E
B
S
TY
L
E
1
:
P
I
N
1
B
E
.
E
M
AS E
I
T
T
E
R
2
3
4
.
.
.
MIT T ER
C O LLE C TO R
CASE 244–04
ISSUE J
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
5
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