MRF428 [TE]
The RF Line NPN Silicon RF Power Transistor; 射频线NPN硅射频功率晶体管
| 型号： | MRF428 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | The RF Line NPN Silicon RF Power Transistor |
| 文件： | 总5页 (文件大小：631K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MRF428/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
MRF428
RF Power Transistor
Designed primarily for high-voltage applications as a high-power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
· Specified 50 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 13 DB
150 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
Efficiency = 45%
· Intermodulation Distortion @ 150 W (PEP) —
IMD = -32 db (Max)
· 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
@ 150 W CW
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCBO
VEBO
IC
Value
55
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector-Emitter Voltage
Collector-Base Voltage
110
4.0
20
Emitter-Base Voltage
Collector Current — Continuous
Withstand Current — 10 s
—
30
Total Device Dissipation @ TC = 25 °C
Derate above 25 °C
PD
320
1.83
Watts
W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
0.5
°C/W
RqJC
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
55
110
110
4.0
—
—
—
—
—
—
—
—
Vdc
Vdc
Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Vdc
Vdc
(continued)
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25 °C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
30
Max
—
Unit
—
ON CHARACTERISTICS
hFE
10
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
COB
—
220
250
pF
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
GPE
POUT
h
13
150
45
15
—
—
—
dB
W (PEP)
%
Common-Emitter Amplifier Gain
(VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc,
f = 30 MHz)
Output Power
(VCE = 50 Vdc, f = 30 MHz)
—
—
Collector Efficiency
(VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc,
f = 30 MHz)
IMD
Y
—
-33
-30
dB
Intermodulation Distortion (1)
(VCE = 50 Vdc, POUT = 150 W (PEP), IC = 3.32 Adc)
Electrical Ruggedness
No Degradation in Output Power
(VCC = 50 Vdc, POUT = 150 W (PEP), IC(max) = 3.32 Adc,
VSWR 30:1 at all Phase Angles)
NOTE:
1. To Mil-Std-1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.
C1,C2,C7 — 170-780 pF, Arco 469
C3,C8,C9 — 0.1mF, 100 V Erie
C4 — 500 mF @ 6.0 V
R2 — 10 W, 1.0 Watt
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16” I.D., 5/16” Long
L2 — 10 mH Molded Choke
C5 — 9.0-180 pF, Arco 463
C6 — 80-480 pF, Arco 466
C10 — 30 mF, 100 V
L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4” I.D.
L4 — 5 Turns, 1/8” Copper Tubing, 9/16” I.D., 3/4” Long
L5 — 10 Ferrite Beads — Ferroxcube #56-590-65/3B
R1 — 10 W, 10 Watt
Figure 1. 30 MHz Test Circuit Schematic
2
3
Figure 10. Series Equivalent Impedance
4
PACKAGE DIMENSIONS
STYLE 1:
NOTES:
PIN 1 EMITTER
PIN 2 BASE
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
PIN 3 EMITTER
PIN 4 COLLECTOR
2. CONTROLLING DIMENSION INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
B
C
0.960
0.465
0.229
0.990
0.510
0.275
24.39
11.82
5.82
25.14
12.95
6.98
D
E
0.216
0.084
0.235
0.110
5.49
2.14
5.96
2.79
H
J
0.144
0.003
0.435
0.178
0.007
—
3.66
0.08
4.52
0.17
—
K
M
Q
R
U
11.05
45 °NOM
45 °NOM
0.115
0.246
0.720
0.130
0.255
0.730
2.93
6.25
3.30
6.47
18.29
18.54
Case 211-11
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266,
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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