MSW2002-200-E [TE]
SP2T PIN Diode Switch;
| 型号： | MSW2002-200-E |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SP2T PIN Diode Switch |
| 文件： | 总15页 (文件大小：1620K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSW200x-200
SP2T PIN Diode Switch
Features
Rev. V1
Wide Frequency Range: 50 MHz to 6 GHz, in 3
bands
Surface Mount SP2T Switch in Compact Outline:
8 mm L x 5 mm W x 2.5 mm H
Higher Average Power Handling than Plastic
Packaged
MMIC Switches: 125 W CW
High RF Peak Power: 500 W
Low Insertion Loss: 0.25 dB
High IIP3: 65 dBm
Operates From Positive Voltage Only: 5 V & 28 V
to 125 V
CS200
Functional Schematic
RoHS* Compliant
Description
The MSW200x-200 series of surface mount silicon
PIN diode SP2T switches handle high power signals
from 50 MHz to 1 GHz (MSW2000), 400 MHz to
4 GHz (MSW2001) and 2 to 6 GHz (MSW2002), in
transmit-receive (TR), active receiver protection and
other applications. This series is manufactured using
a proven hybrid manufacturing process incorporating
high voltage PIN diodes and passive devices
integrated within a ceramic substrate. These low
profile, compact, surface mount components, offer
superior small and large signal performance superior
to that of MMIC devices in QFN packages. The
SP2T switches are designed in an asymmetrical
topology to minimize Tx-Ant loss and maximize Tx-
Rx isolation performance. The very low thermal
resistance (<10ºC/W) of the PIN diodes in these
devices enables them to reliably handle RF incident
power levels of 50 dBm CW and RF peak incident
power levels of 53 dBm in cold switching
applications at TA = 85ºC. The low PIN diode series
resistance (<0.8 Ω), coupled with their long minority
carrier lifetime,(>2 µs), provides input third order
intercept point (IIP3) greater than 65 dBm.
Ordering Information
Part Number
Package
MSW2000-200-T
MSW2000-200-R
MSW2000-200-W
MSW2001-200-T
MSW2001-200-R
MSW2001-200-W
MSW2002-200-T
MSW2002-200-R
MSW2002-200-W
MSW2000-200-E
MSW2001-200-E
MSW2002-200-E
tube
250 or 500 piece reel
Waffle pack
tube
250 or 500 piece reel
Waffle pack
tube
These MSW200x-200 series SP2T switches are
designed to be used in high average and peak
power switch applications, operating from 50 MHz to
6 GHz in three bands, which utilize high volume,
surface mount, solder re-flow manufacturing. These
products are durable and capable of reliably
operating in military, commercial, and industrial
environments.
250 or 500 piece reel
Waffle pack
RF evaluation board
RF evaluation board
RF evaluation board
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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DS-xxxxxxx
MSW200x-200
SP2T PIN Diode Switch
Rev. V1
MSW2000-200 Electrical Specifications: TA = +25°C, PIN = 0 dBm, Z0 = 50 Ω
Parameter
Frequency
Test Conditions
—
Units
MHz
dB
Min.
50
—
Typ.
—
Max.
1000
0.25
0.35
—
TX-Ant Insertion Loss
Ant-RX Insertion Loss
TX-Ant Return Loss
Ant-RX Return Loss
TX-RX Isolation
Condition 1
Condition 2
Condition 1
Condition 2
Condition 1
Condition 2
0.15
0.25
22
dB
—
dB
20
20
48
22
dB
23
—
dB
52
—
RX-TX Isolation
dB
26
—
TX CW Incident Power1
RX CW Incident Power1
Condition 1, 1.5:1 Source & Load VSWR
Condition 2, 1.5:1 Source & Load VSWR
dBm
dBm
—
—
—
—
50
43
Condition 1, 10 µs Pulse Width, 1% Duty Cycle,
TX Peak Incident Power1
dBm
—
—
57
1.5:1 Source & Load VSWR (IL)
Switching Time2
Input IP3
10% - 90% RF Voltage
µs
—
2
3
F1 = 500 MHz, F2 = 510 MHz, P1=P2=10 dBm
dBm
60
65
—
MSW2001-200 Electrical Specifications: TA = +25°C, PIN = 0 dBm, Z0 = 50 Ω
Parameter
Frequency
Test Conditions
—
Units
MHz
dB
Min.
400
—
Typ.
—
Max.
4000
0.4
0.5
—
TX-Ant Insertion Loss
Ant-RX Insertion Loss
TX-Ant Return Loss
Ant-RX Return Loss
TX-RX Isolation
Condition 1
Condition 2
Condition 1
Condition 2
Condition 1
Condition 2
0.3
0.4
18
dB
—
dB
15
dB
15
17
—
dB
32
36
—
RX-TX Isolation
dB
12
14
—
TX CW Incident Power1
RX CW Incident Power1
Condition 1, 1.5:1 Source & Load VSWR
Condition 2, 1.5:1 Source & Load VSWR
dBm
dBm
—
—
—
—
50
43
Condition 1, 10 µs Pulse Width, 1% Duty Cycle,
TX Peak Incident Power1
dBm
—
—
57
1.5:1 Source & Load VSWR (IL)
Switching Time2
Input IP3
10% - 90% RF Voltage
µs
—
1.5
65
2.0
F1 = 2.0 GHz, F2 = 2.01 GHz, P1=P2=40 dBm
dBm
60
—
Continued
2
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DS-xxxxxxx
MSW200x-200
SP2T PIN Diode Switch
Rev. V1
MSW2002-200 Electrical Specifications: TA = +25°C, PIN = 0 dBm, Z0 = 50 Ω
Parameter
Frequency
Test Conditions
—
Units
GHz
dB
Min.
2
Typ.
—
Max.
6
TX-Ant Insertion Loss
Ant-RX Insertion Loss
TX-Ant Return Loss
Ant-RX Return Loss
TX-RX Isolation
Condition 1
Condition 2
Condition 1
Condition 2
Condition 1
Condition 2
—
0.6
0.9
15
0.7
1.0
—
dB
—
dB
13
11
32
11
dB
13
—
dB
34
—
RX-TX Isolation
dB
13
—
TX CW Incident Power1
RX CW Incident Power1
Condition 1, 1.5:1 Source & Load VSWR
Condition 2, 1.5:1 Source & Load VSWR
dBm
dBm
—
—
—
—
50
43
Condition 1, 10 µs Pulse Width, 1% Duty Cycle,
TX Peak Incident Power1
dBm
—
—
57
1.5:1 Source & Load VSWR (IL)
Switching Time2
Input IP3
10% - 90% RF Voltage
µs
—
1.0
65
1.5
F1 = 500 MHz, F2 = 510 MHz, P1=P2=40 dBm
dBm
60
—
Bias State Conditions:
Transmit State
Small Signal Receive State
(TX - ANT in low insertion loss state):
a. B1: -100 mA
(ANT - RX in low insertion loss state):
a. B1: +28 V
b. B2: +100 mA
b. B2: +100 mA
c. B3: -25 mA, +28 V
d. B4: +25 mA
c. B3: -100 mA, 0 V
d. B4: +28 V
1. PIN diode DC reverse voltage to maintain high resistance in the OFF PIN diode is determined by RF frequency, incident power, and VSWR
as well as by the characteristics of the diode. The minimum reverse bias voltage values are provided in this datasheet. The input signal
level applied for small signal testing is approximately 0 dBm.
2. Switching time (50% TTL - 10/90% RF Voltage) is a function of the PIN diode driver performance as well as the characteristics of the
diode. An RC “current spiking network” is used on the driver output to provide a transient current to rapidly remove stored charge from the
PIN diode. Typical component values are: R = 50 to 220 Ω and C = 470 to 1,000 pF. MACOMs MPD2T28125-700 is the recommended PIN
diode driver to interface with the MSW2000-200, MSW2001-200 SP2T and MSW2002-200 switches. Its data sheet is available.
3
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MSW200x-200
SP2T PIN Diode Switch
Rev. V1
Truth Table
Port
J0 - J1
Port
J0 - J2
Bias: B1
Bias: B2
Bias: B3
Bias: B4
Low Loss
Isolation
Isolation
-100 mA
+28 V
+100 mA
+25 mA
+25 mA @ +28 V
-25 mA
-25 mA
+28 V
Low Loss
Evaluation Board Truth Table
Port
J0 - J1
Ant Bias (P1-pin 3) TX Bias (P1-pin 1)
RX Bias (P1-pin 7) DC Bias (P1-pin 5)
TX-ANT Low Loss &
TX-RX Isolation
+5 V @ +100 mA
+5 V @ +100 mA
0 V @ +100 mA
+28 V @ 0 mA
+28 V @ +25 mA
0 V @ +100 mA
0 V @ +25 mA
+28 V @ 0 mA
ANT-RX Low Loss &
RX-TX Isolation
RF Bias Network Component Values
Part #
Frequency (MHz)
Inductors
DC Blocking Capacitors RF Bypass Capacitors
MSW2000-200
MSW2001-200
MSW2002-200
50 - 1000
400 - 4000
2000 - 6000
4.7 µH
82 nH
33 nH
0.1 µF
27 pF
22 pF
0.1 µF
270 pF
33 pF
4
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DS-xxxxxxx
MSW200x-200
SP2T PIN Diode Switch
Rev. V1
Minimum Reverse Bias Voltage3: PINC = 125 W CW, Z0 = 50 Ω with 1.5:1 VSWR
Part #
20 MHz
100 MHz
200 MHz
400 MHz
1 GHz
4 GHz
MSW2000-200
MSW2001-200
120 V
N/A
110 V
N/A
85 V
55 V
85 V
28 V
55 V
N/A
110 V
28 V
MSW2002-200 (F = 1 GHz) 55 V (F = 2 GHz) 28 V (F = 3 GHz) 28 V (F = 4 GHz) 28 V (F = 5 GHz) 28 V (F = 6 GHz) 28 V
3. N/A denotes the switch is not recommended for that frequency band.
The minimum reverse bias voltage required to maintain a PIN diode out of conduction in the presence of a large
RF signal is given by:
Where:
|VDC
|
=
=
=
=
magnitude of the minimum DC reverse bias voltage
magnitude of the peak RF voltage (including the effects of the VSWR)
lowest RF signal frequency expressed in MHz
duty factor of the RF signal
|VRF|
FMHz
D
WMILS = thickness of the diode I layer, expressed in mils (thousands of an inch)
R. Caverly and G. Hiller, ―Establishing the Minimum Reverse Bias for a PIN Diode in a High Power Switch, IEEE
Transactions on Microwave Theory and Techniques, Vol.38, No.12, December 1990
5
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DS-xxxxxxx
MSW200x-200
SP2T PIN Diode Switch
Rev. V1
Absolute Maximum Ratings
Parameter
Conditions
Absolute Maximum
Ant, TX or RX Port
DC Port
TX or RX Port
DC Port
250 mA
150 mA
125 V
125 V
Forward Current
Reverse Voltage
Forward Diode Voltage
IF = 250 mA
1.2 V
TX or Ant Port
Source & Load VSWR = 1.5:1,
TC = 85°C, cold switching
CW Incident Power Handling4
CW Incident Power Handling4
50 dBm
RX or Ant Port
Source & Load VSWR = 1.5:1,
TC = 85°C, cold switching
RX or Ant Port
43 dBm
57 dBm
Peak Incident Power Handling4 Source & Load VSWR = 1.5:1, TC = 85°C, cold switching,
Pulse Width = 10 µs, Duty Cycle = 1%
Total Dissipated RF & DC Power4
Junction Temperature
TC = 85°C, cold switching
3.5 W
+175°C
—
—
Operating Temperature
Storage Temperature
-65°C to +125°C
-65°C to +150°C
+260°C
—
Assembly Temperature
t = 10 s
4. Backside RF and DC grounding area of device must be completely solder attached to the RF circuit board vias for proper electrical and
thermal circuit grounding.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 1C
(HBM) devices. The moisture sensitivity level (MSL)
rating for this part is MSL 1.
Environmental Capabilities
The MSW204x-204 diode is capable of meeting the
environmental requirements of MIL-STD-202 and
MIL-STD-750.
6
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MSW200x-200
SP2T PIN Diode Switch
Rev. V1
Typical Performance Curves: MSW2000-200
Insertion Loss (TX State)
Insertion Loss (RX State)
7
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DS-xxxxxxx
MSW200x-200
SP2T PIN Diode Switch
Rev. V1
Typical Performance Curves: MSW2001-200
Insertion Loss (TX State)
Insertion Loss (RX State)
8
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DS-xxxxxxx
MSW200x-200
SP2T PIN Diode Switch
Rev. V1
Typical Performance Curves: MSW2002-200
Insertion Loss (TX State)
Insertion Loss (RX State)
9
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DS-xxxxxxx
MSW200x-200
SP2T PIN Diode Switch
Rev. V1
SP2T Switch Evaluation Board Schematic
The evaluation boards for the MSW200x-200 family
of surface mount silicon PIN diode SP2T T-R
switches allow the full exercise of each switch for
small signal performance analysis, as well as for
large signal operation with maximum input signal
power of 45 dBm (CW or peak power). Each
evaluation board includes the appropriate MSW200x
-200 switch, DC blocking capacitors at each RF port
and bias decoupling networks at each RF port which
allow DC or low frequency control signals to be
applied to the switch.
Three complementary control signals are required
for proper operation. Bias voltages are applied to the
TX bias port, RX bias port and the DC bias port to
control the state of the switch. A bias voltage of 5 V
must be applied to the Ant Bias (pin 3 of multi-pin
connector P1) port whenever the switch is in
operation.
10
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DS-xxxxxxx
MSW200x-200
SP2T PIN Diode Switch
Transmit State
Rev. V1
evaluation board, and several of the passive
components on the board must be changed in order
to safely handle the dissipated power as well as the
high bias voltage necessary for proper performance.
Contact the factory for recommended components
and heat sink.
In the TX state, the series PIN diode between the
ANT and TX ports is forward biased by applying 0 V
to the TX bias input port (pin 1 of multi-pin connector
P1). The magnitude of the resultant bias current
through the diode is primarily determined by the
voltage applied to the ANT bias port (pin 3 of J1),
the magnitude of the forward voltage across the PIN
diode and the resistance of R1. This current is
nominally 100 mA. At the same time, the PIN diode
connected between RX and DC ports is also forward
biased by applying a higher bias voltage, nominally
28 V, to the RX bias port (pin 7 of P1) and 0 V to the
DC bias port (pin 5 of P1). Under this condition, the
PIN diode connected between the ANT and RX port
is reverse biased and the PIN diode connected
between the RX and DC ports is forward biased.
The magnitude of the bias current through this diode
is primarily determined by the voltage applied to the
RX bias port, the magnitude of the forward voltage
across the PIN diode and the resistance of R2. This
current is nominally 25 mA.
Receive State
In the RX state, the series PIN diode between the
ANT and RX ports is forward biased by applying 0 V
to the RX bias input port (pin 7 of multi-pin connector
P1). The magnitude of the resultant bias current
through the diode is primarily determined by the
voltage applied to the ANT bias port (pin 3 of P1),
the magnitude of the forward voltage across the PIN
diode and the resistance of R1. This current is
nominally 100 mA. At the same time, the PIN diode
connected between RX and DC ports is reverse
biased by applying a high bias voltage, nominally 28
V, to the DC bias port (pin 5 of P1). A high voltage,
nominally 28 V, is also applied to the TX bias port
(pin 1 of P1). Under this condition, the PIN diode
connected between the ANT and TX port is reverse
biased thus isolating the TX RF port from the RX
signal path. The reverse voltage across this diode is
the arithmetic difference of the bias voltage applied
to the TX bias port and the DC forward voltage of
the forward-biased receive series PIN diode. The
minimum voltage required to maintain the series
diode on the TX side of the switch out of conduction
is a function of the magnitude of the RF voltage
present, the standing wave present at the RX series
diode’s anode, the frequency of the RF signal and
the characteristics of the TX series diode, among
other factors. For typical receive-level signals, this
diode is held out of conduction with a relatively small
reverse bias voltage. The values of the reactive
components which comprise the bias decoupling
networks as well as the signal path DC blocking are
shown in the table RF Bias Network Component
Values.
The RX series PIN diode, which is connected
between the ANT and RX ports, must be reverse
biased during the transmit state. The reverse bias
voltage must be sufficiently large to maintain the
diode in its non-conducting, high impedance state
when large RF signal voltage may be present in the
ANT-to-TX path. The reverse voltage across this
diode is the arithmetic difference of the bias voltage
applied to the RX bias port and the DC forward
voltage of the forward-biased transmit series PIN
diode.
The minimum voltage required to maintain the series
diode on the RX side of the switch out of conduction
is a function of the magnitude of the RF voltage
present, the standing wave present at the RX series
diode’s anode, the frequency of the RF signal and
the characteristics of the RX series diode, among
other factors. Minimum control voltages for several
signal frequencies are shown in the table “Minimum
Reverse Bias Voltage”, assuming the input power to
the RX or ANT port to be 100 W CW and the VSWR
on the ANT-TX path to be 1.5:1. It is important to
note that the evaluation board, as supplied from the
factory, is not capable of handling RF input signals
larger than 45 dBm. If performance of the switch
under larger input signals is to be evaluated, an
adequate heat sink must be properly attached to the
Reference Path
A reference path is provided on the evaluation
board, complete with bias decoupling networks, so
that the magnitude of the insertion loss of the micro-
strip transmission lines connected to the switch and
the associated bias decoupling components can be
measured and removed from the measured
performance of the switch.
11
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DS-xxxxxxx
MSW200x-200
SP2T PIN Diode Switch
Rev. V1
SP2T Switch Evaluation Board Layout
Evaluation Board Parts List
MSW2000-200 Band 1
Part
Value
0.1 µF
0.1 µF
47 µH
39 Ω
Case Style
C1, C2, C5 - C8,
C13 - C16
0603
0603
1008
2512
2512
5C3, C4, C11, C12,
C17, C18
L1 - L6
R1, R3
R2
1200 Ω
MSW2001-200 Band 2
Value
Part
Case Style
0603
C1, C5, C7, C13, C15
47 pF
220 pF
1000 pF
43 nH
C2, C6, C8, C9, C10,
C14, C16
C3, C4, C11, C12,
C17, C18
0603
0603
L1 - L6
R1, R3
R2
0603
39 Ω
2512
1200 Ω
2512
MSW2002-200 Band 3
Value
Part
Case Style
0603
C1, C5, C7, C13, C15
10 pF
33 pF
C2, C6, C8, C9, C10,
C14
0603
C3, C4, C10, C11,
C12, C17, C18
1000 pF
8.2 nH
39 Ω
0603
L1 - L5
R1
0603
2512
R2, R3
1200 Ω
2512
7. Second bypass capacitor is optional.
12
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MSW200x-200
SP2T PIN Diode Switch
Rev. V1
Assembly Instructions
SP2T PIN Diodes may be placed onto circuit boards with pick and place manufacturing equipment from tape and
reel. The devices are attached to the circuit using conventional solder re-flow or wave soldering procedures with
RoHS type or Sn 60 / Pb 40 type solders.
13
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MSW200x-200
SP2T PIN Diode Switch
Rev. V1
Outline (CS204)8,9
COMPANY LOGO
DATE CODE
PART NUMBER
RF Circuit Solder footprint
8. Hatched metal area on circuit side of device is RF, DC and thermal grounded.
9. Vias should be solid copper fill and gold plated for optimum heat transfer from backside of switch module through Circuit Vias to metal
thermal ground.
14
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DS-xxxxxxx
MSW200x-200
SP2T PIN Diode Switch
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
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OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
15
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DS-xxxxxxx
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