MSW2010-201-W [TE]
SP2T PIN Diode Switch;
| 型号： | MSW2010-201-W |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SP2T PIN Diode Switch 射频 微波 |
| 文件： | 总12页 (文件大小：1564K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSW201x-201
SP2T PIN Diode Switch
Features
Rev. V1
Wide Frequency Range: 50 MHz to 4 GHz, in 2
bands
Surface Mount SP2T Switch in Compact Outline:
8 mm L x 5 mm W x 2.5 mm H
Higher Average Power Handling than Plastic
Packaged
MMIC Switches: 100 W CW
High RF Peak Power: 500 W
Low Insertion Loss: 0.25 dB
High IIP3: 65 dBm
Operates From Positive Voltage Only: 5 V & 28 V
to 125 V
CS200
Functional Schematic
Ultra-Thin Termination Plating to Combat
Embrittlement
RoHS* Compliant
Description
The MSW2010-201 (50 MHz - 1 GHz) and
MSW2011-201 (400 MHz - 4 GHz) series of surface
mount silicon PIN diode SP2T switches can be used
for high power transmit/receive (TR) switching or
active receiver protection. These switches are
manufactured using a proven hybrid manufacturing
process incorporating high voltage PIN diodes and
passive devices integrated on a ceramic substrate.
These low profile, compact, surface mount
components offer superior small and large signal
performance compared to that of MMIC devices in
QFN packages. The SP2T switches are designed in
an asymmetrical topology to minimize Tx-Ant loss
and maximize Tx-Rx isolation performance. The very
low thermal resistance (<10ºC/W ) of the PIN diodes
in these devices enables them to reliably handle RF
incident power levels of 50 dBm CW and RF peak
incident power levels of 53 dBm in cold switching
applications at TA = 85ºC. The thick I layers of the
PIN diodes, coupled with their long minority carrier
lifetime, provides input third order intercept point
(IIP3) greater than 60 dBm.
Ordering Information
Part Number
Package
MSW2010-201-T
MSW2010-201-R
MSW2010-201-W
MSW2011-201-T
MSW2011-201-R
MSW2011-201-W
MSW2010-201-E
MSW2011-201-E
tube
250 or 500 piece reel
Waffle pack
tube
250 or 500 piece reel
Waffle pack
The MSW2010-201 and MSW2011-201 SP2T
switches are designed to be used in high average
and peak power switch applications, operating from
50 MHz to 4 GHz in two bands, which utilize high
volume, surface mount, solder re-flow
manufacturing. These products are durable and
capable of reliably operating in military, commercial,
and industrial environments.
RF evaluation board
RF evaluation board
* Restrictions on Hazardous Substances,
European Union Directive 2011/65/EU.
1
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For further information and support please visit:
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DS-xxxxxxx
MSW201x-201
SP2T PIN Diode Switch
Rev. V1
MSW2010-201 Electrical Specifications: TA = +25°C, PIN = 0 dBm, Z0 = 50 Ω
Parameter
Frequency
Test Conditions
—
Units
MHz
dB
Min.
50
—
Typ.
—
Max.
1000
0.25
0.35
—
TX-Ant Insertion Loss
Ant-RX Insertion Loss
TX-Ant Return Loss
Ant-RX Return Loss
TX-RX Isolation
Condition 1
Condition 2
Condition 1
Condition 2
Condition 1
Condition 2
0.15
0.25
22
dB
—
dB
20
20
48
22
dB
23
—
dB
52
—
RX-TX Isolation
dB
26
—
TX CW Incident Power1
RX CW Incident Power1
Condition 1, 1.5:1 Source & Load VSWR
Condition 2, 1.5:1 Source & Load VSWR
dBm
dBm
—
—
—
—
50
43
Condition 1, 10 µs Pulse Width, 1% Duty Cycle,
TX Peak Incident Power1
dBm
—
—
57
1.5:1 Source & Load VSWR (IL)
Switching Time2
Input IP3
10% - 90% RF Voltage
µs
—
2
3
F1 = 500 MHz, F2 = 510 MHz, P1=P2=10 dBm
dBm
60
65
—
MSW2011-201 Electrical Specifications: TA = +25°C, PIN = 0 dBm, Z0 = 50 Ω
Parameter
Frequency
Test Conditions
—
Units
MHz
dB
Min.
400
—
Typ.
—
Max.
4000
0.4
0.5
—
TX-Ant Insertion Loss
Ant-RX Insertion Loss
TX-Ant Return Loss
Ant-RX Return Loss
TX-RX Isolation
Condition 1
Condition 2
Condition 1
Condition 2
Condition 1
Condition 2
0.3
0.4
18
dB
—
dB
15
dB
15
17
—
dB
32
36
—
RX-TX Isolation
dB
12
14
—
TX CW Incident Power1
RX CW Incident Power1
Condition 1, 1.5:1 Source & Load VSWR
Condition 2, 1.5:1 Source & Load VSWR
dBm
dBm
—
—
—
—
50
43
Condition 1, 10 µs Pulse Width, 1% Duty Cycle,
TX Peak Incident Power1
dBm
—
—
57
1.5:1 Source & Load VSWR (IL)
Switching Time2
Input IP3
10% - 90% RF Voltage
µs
—
1.5
65
2.0
F1 = 2.0 GHz, F2 = 2.01 GHz, P1=P2=40 dBm
dBm
60
—
Continued
2
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DS-xxxxxxx
MSW201x-201
SP2T PIN Diode Switch
Rev. V1
Bias State Conditions:
Transmit State
(TX - ANT in low insertion loss state):
a. B1: -100 mA
Small Signal Receive State
(ANT - RX in low insertion loss state):
a. B1: +28 V
b. B2: +100 mA
b. B2: +100 mA
c. B3: -25 mA, +28 V
d. B4: +25 mA
c. B3: -100 mA, 0 V
d. B4: +28 V
1. PIN diode DC reverse voltage to maintain high resistance in the OFF PIN diode is determined by RF frequency, incident power, and VSWR
as well as by the characteristics of the diode. The minimum reverse bias voltage values are provided in this datasheet. The input signal
level applied for small signal testing is approximately 0 dBm.
2. Switching time (50% TTL - 10/90% RF Voltage) is a function of the PIN diode driver performance as well as the characteristics of the
diode. An RC “current spiking network” is used on the driver output to provide a transient current to rapidly remove stored charge from the
PIN diode. Typical component values are: R = 50 to 220 Ω and C = 470 to 1,000 pF. MACOMs MPD2T28125-700 is the recommended PIN
diode driver to interface with the MSW2010-201 and MSW2011-201 SP2T switches. Its data sheet is available.
Truth Table
Port
J0 - J1
Port
J0 - J2
Bias: B1
Bias: B2
Bias: B3
Bias: B4
Low Loss
Isolation
Isolation
-100 mA
+28 V
+100 mA
+100 mA
+25 mA @ +28 V
-100 mA
-25 mA
+28 V
Low Loss
Evaluation Board Truth Table
Port
J0 - J1
Ant Bias (P1-pin 3) TX Bias (P1-pin 1)
RX Bias (P1-pin 7) DC Bias (P1-pin 5)
TX-ANT Low Loss &
TX-RX Isolation
+5 V @ +100 mA
+5 V @ +100 mA
0 V @ -100 mA
+28 V @ 0 mA
+28 V @ +25 mA
0 V @ +100 mA
0 V @ -25 mA
+28 V @ 0 mA
ANT-RX Low Loss &
RX-TX Isolation
RF Bias Network Component Values
Part #
Frequency (MHz)
Inductors
DC Blocking Capacitors RF Bypass Capacitors
MSW2010-201
MSW2011-201
50 - 1000
4.7 µH
0.1 µF
0.1 µF
400 - 4000
43 nH
47 pF
270 pF
3
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MSW201x-201
SP2T PIN Diode Switch
Rev. V1
Minimum Reverse Bias Voltage3: PINC = 125 W CW, Z0 = 50 Ω with 1.5:1 VSWR
Part #
20 MHz
100 MHz
200 MHz
400 MHz
1 GHz
4 GHz
MSW2010-201
MSW2011-201
120 V
N/A
110 V
N/A
85 V
55 V
85 V
28 V
55 V
N/A
110 V
28 V
3. N/A denotes the switch is not recommended for that frequency band.
The minimum reverse bias voltage required to maintain a PIN diode out of conduction in the presence of a large
RF signal is given by:
Where:
|VDC
|
=
=
=
=
magnitude of the minimum DC reverse bias voltage
magnitude of the peak RF voltage (including the effects of the VSWR)
lowest RF signal frequency expressed in MHz
duty factor of the RF signal
|VRF|
FMHz
D
WMILS = thickness of the diode I layer, expressed in mils (thousands of an inch)
R. Caverly and G. Hiller, ―Establishing the Minimum Reverse Bias for a PIN Diode in a High Power Switch, IEEE Transac-
tions on Microwave Theory and Techniques, Vol.38, No.12, December 1990
4
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DS-xxxxxxx
MSW201x-201
SP2T PIN Diode Switch
Rev. V1
Absolute Maximum Ratings
Parameter
Conditions
Absolute Maximum
Ant, TX or RX Port
DC Port
TX or RX Port
DC Port
250 mA
150 mA
125 V
125 V
Forward Current
Reverse Voltage
Forward Diode Voltage
IF = 250 mA
1.2 V
TX or Ant Port
Source & Load VSWR = 1.5:1,
TC = 85°C, cold switching
CW Incident Power Handling4
CW Incident Power Handling4
50 dBm
RX or Ant Port
Source & Load VSWR = 1.5:1,
TC = 85°C, cold switching
RX or Ant Port
43 dBm
57 dBm
Peak Incident Power Handling4 Source & Load VSWR = 1.5:1, TC = 85°C, cold switching,
Pulse Width = 10 µs, Duty Cycle = 1%
Total Dissipated RF & DC Power4
Junction Temperature
TC = 85°C, cold switching
8 W
—
—
+175°C
Operating Temperature
Storage Temperature
-65°C to +125°C
-65°C to +150°C
+260°C
—
Assembly Temperature
t = 10 s
4. Backside RF and DC grounding area of device must be completely solder attached to the RF circuit board vias for proper electrical and
thermal circuit grounding.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these Class 1C
(HBM) devices. The moisture sensitivity level (MSL)
rating for this part is MSL 1.
Environmental Capabilities
The MSW204x-204 diode is capable of meeting the
environmental requirements of MIL-STD-202 and
MIL-STD-750.
5
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DS-xxxxxxx
MSW201x-201
SP2T PIN Diode Switch
Rev. V1
Typical Performance Curves
MSW2011-201
MSW2010-201
Insertion Loss
Insertion Loss
Isolation
Isolation
6
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DS-xxxxxxx
MSW201x-201
SP2T PIN Diode Switch
Rev. V1
SP2T Switch Evaluation Board Schematic
The evaluation boards for the MSW201x family of
surface mount silicon PIN diode SP2T T-R switches
allow the full exercise of each switch for small signal
performance analysis, as well as for large signal
operation with maximum input signal power of 45
dBm (CW or peak power). Each evaluation board
includes the appropriate MSW201x-200 switch, DC
blocking capacitors at each RF port and bias
decoupling networks at each RF port which allow DC
or low frequency control signals to be applied to the
switch.
Three complementary control signals are required
for proper operation. Bias voltages are applied to the
TX bias port, RX bias port and the DC bias port to
control the state of the switch. A bias voltage of 5 V
must be applied to the Ant Bias (pin 3 of multi-pin
connector P1) port whenever the switch is in
operation.
7
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DS-xxxxxxx
MSW201x-201
SP2T PIN Diode Switch
Transmit State
Rev. V1
evaluation board, and several of the passive
components on the board must be changed in order
to safely handle the dissipated power as well as the
high bias voltage necessary for proper performance.
Contact the factory for recommended components
and heat sink.
In the TX state, the series PIN diode between the
ANT and TX ports is forward biased by applying 0 V
to the TX bias input port (pin 1 of multi-pin connector
P1). The magnitude of the resultant bias current
through the diode is primarily determined by the
voltage applied to the ANT bias port (pin 3 of J1),
the magnitude of the forward voltage across the PIN
diode and the resistance of R1. This current is
nominally 100 mA. At the same time, the PIN diode
connected between RX and DC ports is also forward
biased by applying a higher bias voltage, nominally
28 V, to the RX bias port (pin 7 of P1) and 0 V to the
DC bias port (pin 5 of P1). Under this condition, the
PIN diode connected between the ANT and RX port
is reverse biased and the PIN diode connected
between the RX and DC ports is forward biased.
The magnitude of the bias current through this diode
is primarily determined by the voltage applied to the
RX bias port, the magnitude of the forward voltage
across the PIN diode and the resistance of R2. This
current is nominally 25 mA.
Receive State
In the RX state, the series PIN diode between the
ANT and RX ports is forward biased by applying 0 V
to the RX bias input port (pin 7 of multi-pin connector
P1). The magnitude of the resultant bias current
through the diode is primarily determined by the
voltage applied to the ANT bias port (pin 3 of P1),
the magnitude of the forward voltage across the PIN
diode and the resistance of R1. This current is
nominally 100 mA. At the same time, the PIN diode
connected between RX and DC ports is reverse
biased by applying a high bias voltage, nominally 28
V, to the DC bias port (pin 5 of P1). A high voltage,
nominally 28 V, is also applied to the TX bias port
(pin 1 of P1). Under this condition, the PIN diode
connected between the ANT and TX port is reverse
biased thus isolating the TX RF port from the RX
signal path. The reverse voltage across this diode is
the arithmetic difference of the bias voltage applied
to the TX bias port and the DC forward voltage of
the forward-biased receive series PIN diode. The
minimum voltage required to maintain the series
diode on the TX side of the switch out of conduction
is a function of the magnitude of the RF voltage
present, the standing wave present at the RX series
diode’s anode, the frequency of the RF signal and
the characteristics of the TX series diode, among
other factors. For typical receive-level signals, this
diode is held out of conduction with a relatively small
reverse bias voltage. The values of the reactive
components which comprise the bias decoupling
networks as well as the signal path DC blocking are
shown in the table RF Bias Network Component
Values.
The RX series PIN diode, which is connected
between the ANT and RX ports, must be reverse
biased during the transmit state. The reverse bias
voltage must be sufficiently large to maintain the
diode in its non-conducting, high impedance state
when large RF signal voltage may be present in the
ANT-to-TX path. The reverse voltage across this
diode is the arithmetic difference of the bias voltage
applied to the RX bias port and the DC forward
voltage of the forward-biased transmit series PIN
diode.
The minimum voltage required to maintain the series
diode on the RX side of the switch out of conduction
is a function of the magnitude of the RF voltage
present, the standing wave present at the RX series
diode’s anode, the frequency of the RF signal and
the characteristics of the RX series diode, among
other factors. Minimum control voltages for several
signal frequencies are shown in the table “Minimum
Reverse Bias Voltage”, assuming the input power to
the RX or ANT port to be 100 W CW and the VSWR
on the ANT-TX path to be 1.5:1. It is important to
note that the evaluation board, as supplied from the
factory, is not capable of handling RF input signals
larger than 45 dBm. If performance of the switch
under larger input signals is to be evaluated, an
adequate heat sink must be properly attached to the
Reference Path
A reference path is provided on the evaluation
board, complete with bias decoupling networks, so
that the magnitude of the insertion loss of the micro-
strip transmission lines connected to the switch and
the associated bias decoupling components can be
measured and removed from the measured
performance of the switch.
8
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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DS-xxxxxxx
MSW201x-201
SP2T PIN Diode Switch
Rev. V1
SP2T Switch Evaluation Board Layout
Evaluation Board Parts List
MSW2010-201 Band 1
Part
Value
0.1 µF
0.1 µF
47 µH
39 Ω
Case Style
C1, C2, C5 - C10,
C13 - C15
0603
0603
1008
2512
2512
5C3, C4, C11, C12,
C17, C18
L1 - L6
R1, R3
R2
1200 Ω
MSW2011-201 Band 2
Value
Part
Case Style
0603
C1, C5, C7, C13, C15
47 pF
220 pF
1000 pF
43 nH
C2, C6, C8, C9, C10,
C14, C16
C3, C4, C11, C12,
C17, C18
0603
0603
L1 - L7
R1, R3
R2, R4
0603
39 Ω
2512
1200 Ω
2512
7. Second bypass capacitor is optional.
9
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MSW201x-201
SP2T PIN Diode Switch
Rev. V1
Assembly Instructions
SP2T PIN Diodes may be placed onto circuit boards with pick and place manufacturing equipment from tape and
reel. The devices are attached to the circuit using conventional solder re-flow or wave soldering procedures with
RoHS type or Sn 60 / Pb 40 type solders.
10
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MSW201x-201
SP2T PIN Diode Switch
Rev. V1
Outline (CS204)8,9
COMPANY LOGO
DATE CODE
PART NUMBER
RF Circuit Solder footprint
8. Hatched metal area on circuit side of device is RF, DC and thermal grounded.
9. Vias should be solid copper fill and gold plated for optimum heat transfer from backside of switch module through Circuit Vias to metal
thermal ground.
11
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DS-xxxxxxx
MSW201x-201
SP2T PIN Diode Switch
Rev. V1
M/A-COM Technology Solutions Inc. All rights reserved.
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products. These materials are provided by MACOM as a service to its customers and may be used for
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specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
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12
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DS-xxxxxxx
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