NPA1003 [TE]

Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier;


型号：	NPA1003
厂家：	TE CONNECTIVITY
描述：	Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier
文件：	总8页 (文件大小：1614K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NPA1003

Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier

Built using the SIGANTIC^®process - A proprietary GaN-on-Silicon technology

Features



Broadband operation from 20-1500 MHz

28V Operation

Input and output matched to 50 ohms

Industry Standard QFN Plastic Package

High Drain Efficiency (>50%)

Applications



Broadband General Purpose

Defense Communications

Land Mobile Radio

20-1500 MHz

GaN MMIC PA

Wireless Infrastructure

VHF/UHF/L-Band Radar

Product Description

The NPA1003 is a wideband, internally-matched, GaN MMIC power amplifier optimized for 20-

1500 MHz operation. This device has been designed for CW, pulsed, and linear operation with

output power levels exceeding 5W (37 dBm) in an industry standard, surface mount, QFN4X4-16

plastic package.

RF Specifications (CW, 1000 MHz): V_DS= 28V, I_DQ= 100mA, T_C= 25°C

Symbol

Parameter

Min

Typ

Max

Units

G_SS

Small-signal Gain

P_SAT

Saturated Output Power

38.5

dBm

Efficiency at Saturated Output Power

Noise Figure

_SAT

2.0

G_P

PAE

V_DS

Gain at P_OUT= 5W

Power Added Efficiency at P_OUT= 5W

Drain Voltage

Ruggedness: Output Mismatch, all phase angles

VSWR = 10:1, No Device Damage



Page 1

NDS-030 Rev. 4, 011414

NPA1003

DC Specifications: T_C= 25°C

Symbol

Off Characteristics

I_DLKDrain-Source Leakage Current

Parameter

Min

Typ

Max

Units

(V_GS=-8V, V_DS=100V)

I_GLK

Gate-Source Leakage Current

(V_GS=-8V, V_DS=0V)

On Characteristics

V_T

Gate Threshold Voltage

(V_DS=28V, I_D=2mA)

-2.5

-1.6

-1.2

1.6

1.5

-0.5

V_GSQ

R_ON

Gate Quiescent Voltage

(V_DS=28V, I_D=100mA)

-2.1

-0.3

On Resistance

(V_DS=2V, I_D=15mA)



I_{D, MAX}

Maximum Drain Current

(V_DS=7V pulsed, 300µS pulse width,

0.2% Duty Cycle)

Thermal Resistance Specification:

Symbol

Parameter

Typ

Units

Thermal Resistance (Junction-to-Case),

T_J= 180 °C

°C/W

R_JC

Junction Temperature (T_J) measured using IR Microscopy, Case Temperature (T_C) measured using a thermocouple embedded in

heatsink.

Absolute Maximum Ratings: Not simultaneous, T_C= 25°C unless otherwise noted

Symbol

Parameter

Max

Units

V_DS

V_GS

I_G

Drain-Source Voltage

100

-10 to 3

Gate-Source Voltage

Gate Current

P_T

Total Device Power Dissipation (Derated above 25°C)

Storage Temperature Range

14.5

T_STG

T_J

-65 to 150

200

°C

Operating Junction Temperature

Human Body Model ESD Rating (per JESD22-A114)

Moisture sensitivity level (per IPC/JEDEC J-STD-020)

HBM

MSL

Class 1A

MSL-1

Page 2

NDS-030 Rev. 4, 011414

NPA1003

20 - 1500 MHz Broadband Circuit

(CW, V_DS=28V, I_DQ=100mA, T_C=25C, unless otherwise noted)

Figure 1. Electrical Schematic of 20 - 1500MHz Broadband Circuit for NPA1003

(For RF Tuning details see Component Placement Diagram Figure 2)

Figure 2: Component Placement of 20 - 1500MHz Broadband Circuit for NPA1003

Reference

Value

Manufacturer

TDK

Part Number

C2012X5R1C106M085AC

06031C103JAT2A

10µF

0.01µF

AVX

4.7µF

TDK

C5750X7R2A475K230KA

C08BL242X-5UN-X0

ERJ-6ENF49R9V

C4, C5

2400pF

Dielectric Labs, Inc.

Panasonic

Coilcraft

49.9Ω

0Ω

0.9µH

ERJ-3GEY0R00V

L1, L2

PCB

1008AF-901XJLC

RO4350, _r=3.5, 0.020”

Rogers

Nitronex NBD-098r1

Page 3

NDS-030 Rev. 4, 011414

NPA1003

Typical Performance in 20 - 1500 MHz Broadband Circuit

(CW, V_DS=28V, I_DQ=100mA, T_C=25C, unless otherwise noted)

-5

Gain

PAE

-10

-15

-20

-25

-30

-35

S21

S11

S22

500

1,000

Frequency (MHz)

1,500

2,000

0.2

0.4

0.6

0.8

1.2

1.4

1.6

Frequency (GHz)

Figure 4: Performance vs. Frequency

Figure 3: Device Small Signal s-parameters

(s-parameters available at nitronex.com)

(P_OUT= 37dBm)

P_OUT= 27dBm

P_OUT= 36dBm

P_OUT= 37dBm

P_OUT= 27dBm

P_OUT= 36dBm

P_OUT= 37dBm

0.2

0.4

0.6

0.8

1.2

1.4

1.6

0.2

0.4

0.6

0.8

1.2

1.4

1.6

Frequency (GHz)

Figure 5: Gain vs. Frequency

Figure 6: Power Added Efficiency vs. Frequency

-40⁰C

25⁰C

85⁰C

-40⁰C

25⁰C

85⁰C

0.2

0.4

0.6

0.8

1.2

1.4

1.6

0.2

0.4

0.6

0.8

1.2

1.4

1.6

Frequency (GHz)

Figure 7: Gain vs. Frequency

Figure 8: Power Added Efficiency vs. Frequency

(P_OUT= 37dBm)

Page 4

NDS-030 Rev. 4, 011414

NPA1003

Typical Performance in 20 - 1500 MHz Broadband Circuit

(CW, V_DS=28V, I_DQ=100mA, T_C=25C, unless otherwise noted)

-2

-4

-40⁰C

25⁰C

85⁰C

-6

-8

100MHz

500MHz

-10

-12

900MHz

1.5GHz

0.2

0.4

0.6

0.8

1.2

1.4

1.6

Frequency (GHz)

P_OUT(dBm)

Figure 9: Input Return Loss vs. Frequency

Figure 10: Gain vs. P_OUT

(P_OUT= 37dBm)

-2

100MHz

500MHz

900MHz

1.5GHz

-4

-6

-8

-10

-12

-14

-16

-18

100MHz

500MHz

900MHz

1.5GHz

P_OUT(dBm)

Figure 11: Power Added Efficiency vs. P_OUT

Figure 12: Input Return Loss vs. P_OUT

V_DS= 15V

V_DS= 20V

V_DS= 28V

V_DS= 15V

V_DS= 20V

V_DS= 28V

P_OUT(dBm)

Figure 13: Gain vs. P_OUT

Figure 14: Power Added Efficiency vs. P_OUT

(f = 900MHz)

Page 5

NDS-030 Rev. 4, 011414

NPA1003

Typical Performance in 20 - 1500 MHz Broadband Circuit

(CW, V_DS=28V, I_DQ=100mA, f=1GHz, T_C=25C, unless otherwise noted)

-1.0

-1.1

-1.2

-1.3

-1.4

-1.5

-1.6

50mA

100mA

150mA

-50

-25

100

125

150

175

Temperature (^oC)

Case Temperature (^oC)

Figure 16: Power De-rating Curve

Figure 15: Quiescent V_GSvs. Temperature

(T_J= 200°C, T_C> 25°C)

-20

-25

-30

-35

-40

-45

-50

25mA

50mA

100mA

150mA

100mA

150mA

0.01

0.1

0.01

0.1

P_OUT(W-PEP)

Figure 17: 2-Tone IMD3 vs. P_OUTvs. I_DQ

Figure 18: 2-Tone Gain vs. P_OUTvs. I_DQ

(1MHz Tone Spacing, f = 500MHz)

-20

-25

-30

-35

-40

-45

-50

-55

-15

-20

-25

-30

-35

-40

-45

-50

-IMD3

+IMD3

-IMD5

+IMD5

-IMD7

+IMD7

-IMD3

+IMD3

-IMD5

+IMD5

-IMD7

+IMD7

0.1

100

P_OUT(W-PEP)

Tone Spacing (MHz)

Figure 19: 2-Tone IMD vs. P_OUT

(1MHz Tone Spacing, I_DQ= 50mA, f = 500MHz)

Figure 20: 2-Tone IMD vs. Tone Spacing

(P_OUT= 6W-PEP, I_DQ= 50mA, f = 500MHz)

Page 6

NDS-030 Rev. 4, 011414

NPA1003

Figure 21 - QFN4X4-16 Plastic Package Dimensions (all dimensions in inches [millimeters])

Function

2, 3

Gate — RF Input

Drain — RF Output

10, 11

Exposed Pad Source — Ground

1, 4-9, 12-16 No Connect*

* All No Connect pins may be left floating or grounded

Page 7

NDS-030 Rev. 4, 011414

NPA1003

Nitronex, LLC

2305 Presidential Drive

Durham, NC 27703 USA

+1.919.807.9100 (telephone)

+1.919.807.9200 (fax)

info@nitronex.com

www.nitronex.com

Additional Information

This part is lead-free and is compliant with the RoHS directive

(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).

Important Notice

Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to its products and

services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information

before placing orders and should verify that such information is current and complete. All products are sold subject to Nitronex terms and

conditions of sale supplied at the time of order acknowledgment. The latest information from Nitronex can be found either by calling

Nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com.

Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in accordance

with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex deems necessary to sup-

port the warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily

performed.

Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their product and

applications using Nitronex semiconductor products or services. To minimize the risks associated with customer products and applica-

tions, customers should provide adequate design and operating safeguards.

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invalidates all warranties and Nitronex is not responsible or liable for any such statements.

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All other product or service names are the property of their respective owners.

Page 8

NDS-030 Rev. 4, 011414

NPA1003 [TE]

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