NPT1012 [TE]

Gallium Nitride 28V, 25W RF Power Transistor;


型号：	NPT1012
厂家：	TE CONNECTIVITY
描述：	Gallium Nitride 28V, 25W RF Power Transistor
文件：	总8页 (文件大小：1019K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NPT1012

Gallium Nitride 28V, 25W RF Power Transistor

Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology

FEATURES

• Optimized for broadband operation from

DC-4000MHz

• 25W P_3dBCW power at 3000MHz

• 16-20W P_3dBCW power from 1000-2500MHz in

application board with >45% drain efﬁciency

• 10-20W P_3dBCW power from 30-1000MHz in ap-

plication board with >50% drain efﬁciency

• High efﬁciency from 14 - 28V

DC – 4000 MHz

25 Watt, 28 Volt

GaN HEMT

• 4.0 °C/W R_THwith maximum T_Jrating of 200 °C

• Robust up to 10:1 VSWR mismatch at all angles

with no device damage at 90 °C ﬂange

• Subject to EAR99 export control

RF Speciﬁcations (CW, 3000MHz): V_DS= 28V, I_DQ= 225mA, T_C= 25°C, Measured in Nitronex Test Fixture

Symbol

Parameter

Min

Typ

Max

Units

P_3dB

P_1dB

G_SS

Average Output Power at 3dB Gain Compression

Average Output Power at 1dB Gain Compression

Small Signal Gain

dBm

Drain Efﬁciency at 3dB Gain Compression

10:1 VSWR at all phase angles

VSWR

No damage to the device

Figure 2 - Typical CW Performance¹in

Figure 1 - Typical CW Performance in

Load-Pull, V_DS= 28V, I_DQ= 225mA

Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability

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NPT1012

DC Speciﬁcations: T_C= 25°C

Symbol

Parameter

Min

Typ

Max

Units

Off Characteristics

Drain-Source Breakdown Voltage

(V_GS= -8V, I_D= 8mA)

V_BDS

I_DLK

100

Drain-Source Leakage Current

(V_GS= -8V, V_DS= 60V)

On Characteristics

Gate Threshold Voltage

(V_DS= 28V, I_D= 8mA)

V_T

-2.3

-2.0

-1.8

-1.5

-1.3

-1.0

Gate Quiescent Voltage

(V_DS= 28V, I_D= 225mA)

V_GSQ

R_ON

On Resistance

(V_GS= 2V, I_D= 60mA)

0.44

0.55

Drain Current

I_D,MAX

(V_DS= 7V pulsed, 300ms pulse width,

0.2% duty cycle, V_GS= 2.0V)

5.4

Thermal Resistance Speciﬁcation

Symbol

Parameter

Min

Typ

Max

Units

Thermal Resistance (Junction-to-Case),

T_J= 180 °C

q_JC

4.0

°C/W

Absolute Maximum Ratings: Not simultaneous, T_C= 25°C unless otherwise noted

Symbol

Parameter

Max

Units

V_DS

V_GS

I_G

Drain-Source Voltage

100

-10 to 3

Gate-Source Voltage

Gate Current

P_T

Total Device Power Dissipation (Derated above 25°C)

Storage Temperature Range

T_STG

T_J

-65 to 150

200

°C

Operating Junction Temperature

HBM

CDM

Human Body Model ESD Rating (per JESD22-A114)

Machine Model ESD Rating (per JESD22-A115)

Charge Device Model ESD Rating (per JESD22-C101)

1B (+/-500V)

A (>100V)

IV (>1000V)

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NPT1012

Load-Pull Data, Reference Plane at Device Leads

V_DS=28V, I =225mA, T_A=25°C unless otherwise noted

Table 1: Optimum Source and Load Impedances¹for CW Gain, Drain Efﬁciency, and Output Power Performance

Frequency

(W)

Drain Efﬁciency @ P

(%)

SAT

(W)

(dB)

27.8

29.2

29.7

22.4

23.3

23.6

18.4

13.7

14.9

15.2

13.2

12.9

(MHz)

(V)

500

7.0 + j8.2

5.8 + j3.1

3.5 - j3.6

3.9 - j7.5

4.8 - j7.0

5.3 - j8.8

5.0 - j14.5

8.6 + j7.4

9.7+ j11.3

9.7 + j14.1

6.8 + j4.7

9.6 + j5.3

9.8 + j 7.8

6.9 + j2.0

6.2 - j8.0

5.5 - j4.1

5.3 - j6.4

7.0 - j9.5

500

900

1800

2500

3000

3500

Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability

is the source impedance

presented to the device.

Z is the load impedance

presented to the device.

Figure 3 - Optimum Impedances for CW

Performance, V_DS= 28V

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NPT1012

Load-Pull Data, Reference Plane at Device Leads

V_DS=28V, I =225mA, T_A=25°C unless otherwise noted

72%

43.5dBm

44.0dBm

Figure 5 - Load-Pull Contours¹, 900MHz,

P_IN= 21.0dBm, Z_S= 5.8 + j3.1 Ω

Figure 4 - Load-Pull Contours¹, 500MHz,

P_IN= 14.5dBm, Z_S= 7.0 + j8.2 Ω

Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability

66%

69%

44.0dBm

Figure 7 - Load-Pull Contours, 2500MHz,

P_IN= 29.4dBm, Z_S= 4.8 - j7.0 Ω

Figure 6 - Load-Pull Contours, 1800MHz,

P_IN= 26.5dBm, Z_S= 3.5 - j3.6 Ω

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NPT1012

Load-Pull Data, Reference Plane at Device Leads

V_DS=28V, I =225mA, T_A=25°C unless otherwise noted

63%

44.0dBm

63%

44.0dBm

Figure 8 - Load-Pull Contours, 3000MHz,

P_IN= 31.7dBm, Z_S= 5.3 - j8.8 Ω

Figure 9 - Load-Pull Contours, 3500MHz,

P_IN= 33.5dBm, Z_S= 5.0 - j14.5 Ω

Figure 11 - Typical CW Performance¹Over

Figure 10 - Typical CW Performance in

Voltage in Load-Pull, 500MHz

Load-Pull

Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability

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NPT1012

Load-Pull Data, Reference Plane at Device Leads

V_DS=28V, I =225mA, T_A=25°C unless otherwise noted

Figure 12 - Typical CW Performance¹Over

Voltage in Load-Pull, 900MHz

Figure 13 - Typical CW Performance Over

Voltage in Load-Pull, 2500MHz

Note 1: 500MHz and 900MHz Load-Pull data collected using a 4.7 Ω resistor in the RF path added for stability

Figure 14 - Typical CW Performance Over

Temperature in Nitronex Test Fixture,

3000MHz

Figure 15 - Quiescent Gate Voltage (V_GSQ)

Required to Reach I_DQas a Function of

Case Temperature, V_DS= 28V

Figure 16 - MTTF of NRF1 Devices as a Function of

Figure 17 - Power Derating Curve

Junction Temperature

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NPT1012

Ordering Information

Part Number

Description

NPT1012B

NPT1012 in AC200B-2 Metal-Ceramic Bolt-Down Package

1: To ﬁnd a Nitronex contact in your area, visit our website at http://www.nitronex.com

Figure 18 - AC200B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])

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NPT1012

Nitronex, LLC

2305 Presidential Drive

Durham, NC 27703 USA

+1.919.807.9100 (telephone)

+1.919.807.9200 (fax)

info@nitronex.com

www.nitronex.com

Additional Information

This part is lead-free and is compliant with the RoHS directive

(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).

Important Notice

Nitronex, LLC reserves the right to make corrections, modiﬁcations, enhancements, improvements and other changes to

its products and services at any time and to discontinue any product or service without notice. Customers should obtain

the latest relevant information before placing orders and should verify that such information is current and complete. All

products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest

information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at

www.nitronex.com.

Nitronex warrants performance of its packaged semiconductor or die to the speciﬁcations applicable at the time of sale in

accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex

deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters

of each product is not necessarily performed.

Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their

product and applications using Nitronex semiconductor products or services. To minimize the risks associated with

customer products and applications, customers should provide adequate design and operating safeguards.

Nitronex does not warrant or represent that any license, either express or implied, is granted under any Nitronex patent right,

copyright, mask work right, or other Nitronex intellectual property right relating to any combination, machine or process in

which Nitronex products or services are used.

Reproduction of information in Nitronex data sheets is permitted if and only if said reproduction does not alter any of the

information and is accompanied by all associated warranties, conditions, limitations and notices. Any alteration of the

contained information invalidates all warranties and Nitronex is not responsible or liable for any such statements.

Nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical

implants into the body or any other application intended to support or sustain life. Should Buyer purchase or use Nitronex,

LLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold Nitronex, LLC, its

ofﬁcers, employees, subsidiaries, afﬁliates, distributors, and its successors harmless against all claims, costs, damages,

and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

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regarding the design or manufacture of said products.

Nitronex and the Nitronex logo are registered trademarks of Nitronex, LLC.

All other product or service names are the property of their respective owners.

NPT1012

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