NPT1015B-SMBPPR [TE]
GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz;
| 型号： | NPT1015B-SMBPPR |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz |
| 文件： | 总12页 (文件大小：1548K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Features
Functional Schematic
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 3.5 GHz
28 V Operation
12 dB Gain @ 2.5 GHz
54 % Drain Efficiency @ 2.5 GHz
100 % RF Tested
Standard metal ceramic package with bolt down
flange
RFIN / VG
1
2
RFOUT / VD
RoHS* Compliant
3
Flange
Description
The NPT1015 GaN HEMT is a wideband transistor
optimized for DC - 3.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 45 W (46.5 dBm) in an
industry standard metal-ceramic package with bolt
down flange.
The NPT1015 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Pin Configuration
Pin No.
Pin Name
Function
1
2
3
RFIN / VG
RFOUT / VD
Flange1
RF Input / Gate
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
RF Output / Drain
Ground / Source
1. The Flange must be connected to RF and DC ground. This
path must also provide a low thermal resistance heat path.
Ordering Information
Part Number
NPT1015B
Package
bulk quantity
sample
NPT1015B-SMBPPR
*
Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
RF Electrical Specifications: TC = 25C, VDS = 28 V, IDQ = 400 mA
Parameter
Test Conditions
Symbol
GSS
PSAT
SAT
GP
Min.
Typ.
13.5
47.3
57
Max.
Units
dB
Small Signal Gain
CW, 2.5 GHz
-
-
-
-
-
-
-
Saturated Output Power
Drain Efficiency at Saturation
Power Gain
CW, 2.5 GHz
dBm
%
CW, 2.5 GHz
-
2.5 GHz, POUT = 45 W
2.5 GHz, POUT = 45 W
All phase angles
10.5
47
12
dB
Drain Efficiency
54
%
Ruggedness: Output Mismatch
VSWR = 15:1, No Device Damage
DC Electrical Characteristics: TC = 25C
Parameter
Test Conditions
Symbol
IDLK
Min.
Typ.
-
Max.
16
8
Units
mA
mA
V
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
On Resistance
VGS = -8 V, VDS = 100 V
VGS = -8 V, VDS = 0 V
-
IGLK
-
-2.3
-2.1
-
-
VDS = 28 V, ID = 16 mA
VT
-1.5
-1.2
0.22
9.2
-0.7
-0.5
-
VDS = 28 V, ID = 400 mA
VDS = 2 V, ID = 120 mA
VGSQ
RON
V
Maximum Drain Current
VDS = 7 V pulsed, pulse width 300 µs
ID,MAX
-
-
A
2
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Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Absolute Maximum Ratings2,3,4
Parameter
Absolute Maximum
Drain Source Voltage, VDS
100 V
Gate Source Voltage, VGS
Gate Current, IG
-10 to 3 V
32 mA
Junction Temperature, TJ
Operating Temperature
Storage Temperature
+200°C
-40°C to +85°C
-65°C to +150°C
2. Exceeding any one or combination of these limits may cause permanent damage to this device.
3. MACOM does not recommend sustained operation near these survivability limits.
4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Thermal Characteristics5
Parameter
Test Conditions
Symbol Typical
2.1
Units
Thermal Resistance
VDS = 28 V, TJ = 180°C
°C/W
RJC
5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1B
devices.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Load-Pull Performance: VDS = 28 V, IDQ = 400 mA, TC = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
(MHz)
Drain Efficiency
ZS
()
ZL
()
PSAT
(W)
GSS
(dB)
@ PSAT (%)
900
1.1 + j0.7
1.6 - j6.0
1.5 - j6.7
2.6 - j15
6.3 + j1.8
5.4 - j0.6
5.2 - j2.2
3.9 - j6.3
53.7
53.2
50.9
42.0
22.5
15.8
15.0
13.9
65.1
2200
2500
3500
64.8
60.8
55.4
Impedance Reference
ZS and ZL vs. Frequency
ZL
ZS
Gain vs. Output Power
Drain Efficiency vs. Output Power
24
70
900MHz
2200MHz
2500MHz
3500MHz
22
60
900MHz
2200MHz
2500MHz
20
50
3500MHz
18
40
30
20
10
0
16
14
12
10
25
30
35
40
45
50
25
30
35
40
45
50
POUT (dBm)
POUT (dBm)
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
VGS
VDS
C5
1.0 mF
C1
1.0 mF
C2
0.1 mF
C3
0.01 mF
C4
1000 pF
C8
1000pF
C7
0.01 mF
C6
0.1 mF
C9
10 pF
R1
15
C10
20 pF
L1
19.4 nH
RFOUT
NPT1015
C14
10 pF
C15
0.6 pF
RFIN
C13
10 pF
C11
2.4 pF
C12
2.2 pF
Description
Parts measured on evaluation board (20-mil thick
RO4350). Matching is provided using
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Bias Sequencing
Turning the device ON
a
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (28 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
Parts list
Reference
C1, C5
C2, C6
C3, C7
C4, C8
C9, C14
C10
Value
1.0 µF
0.1 µF
0.01 µF
1000 pF
10 pF
Tolerance
10%
Manufacturer
AVX
Part Number
12101C105KAT2A
C1206C104K1RACTU
1206C103KAT2A
C0805C102K1RACTU
ATC800B100B
10%
Kemet
AVX
10%
10%
Kemet
ATC
0.1 pF
0.1 pF
0.1 pF
0.1 pF
0.1 pF
0.1 pF
5%
20 pF
ATC
ATC800B200B
C11
2.4 pF
2.2 pF
10 pF
ATC
ATC600F2R4B
C12
ATC
ATC600F2R2B
C13
ATC
ATC600F100B
C15
0.6 pF
19.4 nH
15 Ω
ATC
ATC600F0R6B
L1
CoilCraft
Panasonic
0806SQ-19NJL
R1
1%
ERJ-2RKF15R0X
PCB
Rogers RO4350, r = 3.5, 0.020”
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Typical performance as measured in the 2.5 GHz evaluation board:
CW, VDS = 28 V, IDQ = 400 mA (unless noted)
Gain vs. Output Power over Temperature
Drain Efficiency vs. Output Power over Temperature
15
60
50
40
30
20
10
0
+25°C
-40°C
+85°C
14
13
12
+25°C
-40°C
+85°C
11
10
25
25
30
35
40
45
50
30
35
40
45
50
POUT (dBm)
POUT (dBm)
Quiescent VGS vs. Temperature
-1.1
200mA
400mA
-1.2
600mA
-1.3
-1.4
-1.5
-1.6
-50
-25
0
25
50
75
100
Temperature (oC)
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Typical 2-Tone Performance as measured in the 2.5 GHz evaluation board:
1 MHz Tone Spacing, VDS = 28 V, IDQ = 400 mA, TC = 25°C (unless noted)
2-Tone Gain vs. Output Power vs. Quiescent Current
2-Tone IMD3 vs. Output Power vs. Quiescent Current
-15
15.0
14.5
14.0
13.5
13.0
12.5
12.0
200mA
-20
300mA
400mA
-25
600mA
800mA
-30
-35
-40
-45
-50
200mA
300mA
400mA
600mA
800mA
0.1
1
10
100
0.1
1
10
100
POUT (W-PEP)
POUT (W-PEP)
2-Tone IMD vs. Output Power
-20
-IMD3
-25
+IMD3
-IMD5
-30
+IMD5
-IMD7
-35
+IMD7
-40
-45
-50
-55
0.1
1
10
100
POUT (W-PEP)
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
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NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Evaluation Board and Recommended Tuning Solution
600 - 1000 MHz Broadband Circuit
Parts list
Reference
Value
Tolerance
Manufacturer
Part Number
C1
150 µF
20%
Nichicon
UPW1C151MED
C2, C5
C3, C6
C4, C7
C8
0.01 µF
0.1 µF
1.0 µF
270 µF
56 pF
10%
10%
10%
20%
5%
5%
5%
1%
1%
1%
5%
-
AVX
Kemet
1206C103KAT2A
C1206C104K1RACTU
12101C105KAT2A
ELXY 630ELL271MK25S
ATC100B560J
AVX
United Chemi-Con
ATC
C9
C10, C12
C11
100 pF
6.8 pF
0.33 Ω
10 Ω
ATC
ATC100B101J
ATC
ATC100B6R8J
R1, R2
R3
Panasonic
Panasonic
Stackpole
Coilcraft
ERJ-6RQFR33V
ERJ-6ENF10R0V
RHC2512FT7R50
0805CS-121XJB
5 turn, 0.2"ID
R4, R5
L1
7.5 Ω
120 nH
~50 nH
L2
16 AWG Cu Wire
PCB
Rogers LM6010, r = 10.2, 0.025”
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Evaluation Board and Recommended Tuning Solution
600 - 1000 MHz Broadband Circuit
VG
VD
C1
C8
150 mF
R1
R2
270 mF
0.33
0.33
L1
120 nH
C4
C7
C2
C3
C5
C6
1.0 mF
1.0 mF
0.01 mF
0.1 mF
0.01 mF
0.1 mF
L2
8.0 nH
C9
56 pF
R3
10
RFOUT
NPT1015
C12
100 pF
R4
7.5
C11
6.8 pF
RFIN
C10
10 pF
R5
7.5
Performance vs. Frequency at POUT = PSAT
Performance vs. Frequency at POUT = 45 dBm
25
30
80
70
60
50
70
60
50
40
Gain
Drain Eff
Psat
20
25
20
15
15
10
5
Gain
Drain Eff
40
10
30
600
700
800
900
1,000
600
700
800
900
1,000
Frequency (MHz)
Frequency (MHz)
Performance vs. Output Power (f = 700 MHz)
Small Signal s-parameters vs. Frequency
35
20
70
60
50
40
30
20
10
-5
19
18
30
25
-10
-15
-20
-25
17
20
Gain
Drain Eff
16
s21
15
s11
s22
15
25
0
50
10
500
-30
1,000
30
35
40
45
600
700
800
900
POUT (dBm)
Frequency (MHz)
10
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
AC360B-2 Metal Ceramic Package†
All dimensions shown as inches [millimeters].
†
Plating is Ni / Au.
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
specifications and product descriptions at any time, without notice. MACOM makes no commitment to update
the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,
to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
12
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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