NPT2019 [TE]
Gallium Nitride 48V, 25W, DC-6 GHz HEMT;
| 型号： | NPT2019 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Gallium Nitride 48V, 25W, DC-6 GHz HEMT |
| 文件： | 总5页 (文件大小：918K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT2019
Preliminary
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and pulsed applications
Tunable from DC-6 GHz
48V Operation
Industry Standard Plastic Package
High Drain Efficiency (>60%)
Applications
Defense Communications
Land Mobile Radio
Avionics
DC-6 GHz
25W
GaN HEMT
Wireless Infrastructure
ISM Applications
VHF/UHF/L/S-Band Radar
Product Description
The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This
device has been designed for CW, pulsed, and linear operation with pulsed output power levels
to 25W (44 dBm) in an industry standard surface mount plastic package.
RF Specifications (Pulsed*, 2.5 GHz): VDS = 48V, IDQ = 150mA, TC= 25°C
Symbol
Parameter
Min
Typ
Max
Units
GSS
Small-signal Gain
-
16.2
-
-
-
-
-
-
dB
PSAT
Saturated Output Power
-
-
-
-
-
44.8
60
dBm
%
Efficiency at Saturated Output Power
Gain at POUT = 25W*
SAT
GP
16
dB
%
Drain Efficiency at POUT = 25W*
Drain Voltage
55
VDS
48
V
Ruggedness: Output Mismatch, all phase angles
VSWR = TBD:1, No Device Damage
* Pulse Conditions: 100µS pulse width, 10% duty cycle
Preliminary Datasheet
NDS-043 Rev. 2, 012414
Page 1
NPT2019
DC Specifications: TC = 25°C
Preliminary
Symbol
Off Characteristics
IDLK Drain-Source Leakage Current
Parameter
Min
Typ
Max
Units
-
-
-
-
6
3
mA
mA
(VGS=-8V, VDS=160V)
IGLK
Gate-Source Leakage Current
(VGS=-8V, VDS=0V)
On Characteristics
VT
Gate Threshold Voltage
(VDS=48V, ID=6mA)
-2.5
-1.5
-1.2
0.75
3.5
-0.5
V
V
VGSQ
RON
Gate Quiescent Voltage
(VDS=48V, ID=150mA)
-2.1
-0.3
On Resistance
(VDS=2V, ID=45mA)
-
-
-
-
ID, MAX
Maximum Drain Current
(VDS=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
A
Thermal Resistance Specification:
Symbol
Parameter
Typ
Units
Thermal Resistance (Junction-to-Case),
TJ = 200 °C
3.8
°C/W
RJC
Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in
heatsink.
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
IG
Drain-Source Voltage
160
-10 to 3
12
V
V
Gate-Source Voltage
Gate Current
mA
W
PT
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
46
TSTG
TJ
-65 to 150
200
°C
°C
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Moisture sensitivity level (per IPC/JEDEC J-STD-020)
HBM
MSL
Class 1B
TBD
Preliminary Datasheet
NDS-043 Rev. 2, 012414
Page 2
NPT2019
Preliminary
Load-Pull Data, Reference Plane at Device Leads
VDS=48V, IDQ=150mA, TC=25C unless otherwise noted
Optimum Source and Load Impedances:
(Pulsed CW* Drain Efficiency and Output Power Tradeoff Impedance)
Frequency
(MHz)
PSAT (W)
GSS (dB)
Drain Efficiency
@ PSAT (%)
ZS ()
ZL ()
900
4.0 + j4.5
2.7 - j3.9
2.5 - j10.9
3.1 - j13.5
9.8 + j17.3
5.7 + j9.0
4.9 + j4.0
2.8 - j2.8
36
35
34
30
26.0
17.0
13.5
12.5
63
58
55
52
2500
4000
5800
* Pulse Conditions: 100µS pulse width, 10% duty cycle
Figure 1: CW Power/Drain Efficiency
Tradeoff Impedances, ZO=20
30
25
70
60
50
40
30
20
10
0
900MHz
2500MHz
4000MHz
5800MHz
900MHz
2500MHz
4000MHz
5800MHz
20
15
10
25
30
35
40
45
50
25
30
35
40
45
50
POUT (dBm)
POUT (dBm)
Figure 3: Efficiency vs. POUT
Figure 2: Gain vs. POUT
Preliminary Datasheet
NDS-043 Rev. 2, 012414
Page 3
NPT2019
Preliminary
Figure 1 - DFN3X6-14 Plastic Package Dimensions (all dimensions in inches [millimeters])
Pin
Function
10, 11, 12
2-6
Gate — RF Input
Drain — RF Output
Source — Ground
Exposed Pad
1, 7, 8, 9, 13, 14 No Connect*
* All No Connect pins may be left floating or grounded
Preliminary Datasheet
NDS-043 Rev. 2, 012414
Page 4
NPT2019
Preliminary
Nitronex, LLC
523 Davis Drive, Suite 500
Morrisville, NC 27560 USA
+1.919.807.9100 (telephone)
+1.919.472.0692 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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Preliminary Datasheet
NDS-043 Rev. 2, 012414
Page 5
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