NPT2021_14 [TE]
Suitable for linear and saturated applications;
| 型号： | NPT2021_14 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Suitable for linear and saturated applications |
| 文件： | 总9页 (文件大小：1544K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 2.5 GHz
48 V Operation
16.5 dB Gain at 2.5 GHz
55 % Drain Efficiency at 2.5 GHz
100 % RF Tested
TO-272 Package
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2021 GaN HEMT is a wideband transistor
optimized for DC - 2.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 45 W in an industry standard
plastic package with bolt down flange.
Functional Schematic
The NPT2021 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
2
1
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
3
Pin Configuration
Pin No.
Pin Name
RFIN / VG
RFOUT / VD
Pad1
Function
RF Input / Gate
1
2
3
Ordering Information
RF Output / Drain
Ground / Source
Part Number
NPT2021
Package
Bulk Quantity
Sample Board
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also
provide a low thermal resistance heat path.
NPT2021-SMBPPR
*
Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
RF Electrical Specifications: TC = 25C, VDS = 48 V, IDQ = 350 mA
Parameter
Small Signal Gain
Test Conditions
CW, 2.5 GHz
Symbol
GSS
PSAT
SAT
GP
Min.
Typ.
14.2
47.5
65
Max.
Units
dB
-
-
-
-
-
-
-
Saturated Output Power
Drain Efficiency at Saturation
Power Gain
CW, 2.5 GHz
dBm
%
CW, 2.5 GHz
-
2.5 GHz, POUT = 45 W
2.5 GHz, POUT = 45 W
All phase angles
12
45
12.8
50
dB
Drain Efficiency
%
Ruggedness: Output Mismatch
VSWR = 15:1, No Device Damage
DC Electrical Characteristics: TC = 25C
Parameter
Test Conditions
Symbol
IDLK
Min.
Typ.
-
Max.
14
7
Units
mA
mA
V
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
On Resistance
VGS = -8 V, VDS = 160 V
VGS = -8 V, VDS = 0 V
-
IGLK
-
-2.5
-2.1
-
-
VDS = 48 V, ID = 14 mA
VT
-1.8
-1.5
0.34
8.2
-0.5
-0.3
-
VDS = 48 V, ID = 350 mA
VDS = 2 V, ID = 105 mA
VGSQ
RON
V
Saturated Drain Current
VDS = 7 V pulsed, pulse width 300 µs
ID(SAT)
-
-
A
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
Absolute Maximum Ratings2,3,4
Parameter
Absolute Maximum
Drain Source Voltage, VDS
160 V
Gate Source Voltage, VGS
Gate Current, IG
-10 to 3 V
24 mA
Junction Temperature, TJ
Operating Temperature
Storage Temperature
+200°C
-40°C to +85°C
-65°C to +150°C
2. Exceeding any one or combination of these limits may cause permanent damage to this device.
3. MACOM does not recommend sustained operation near these survivability limits.
4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Thermal Characteristics5
Parameter
Test Conditions
Symbol Typical
1.60
Units
Thermal Resistance
VDS = 48 V, TJ = 200°C
°C/W
RJC
5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1B
devices.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
Load-Pull Performance: VDS = 48 V, IDQ = 350 mA, TC = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
(MHz)
Drain Efficiency
ZS
()
ZL
()
PSAT
(W)
GSS
(dB)
@ PSAT (%)
900
2000
2500
1.1 + j0.7
1.4 - j6.1
1.5 - j7.6
7.3 + j5.5
2.9 + j2.4
2.3 + j0.6
74
65
64
24
17
14
68
68
65
Impedance Reference
ZS and ZL vs. Frequency
ZL
ZS
Gain vs. Output Power
Drain Efficiency vs. Output Power
24
70
900 MHz
60
22
2000 MHz
2500 MHz
50
900 MHz
20
2000 MHz
40
30
20
10
0
2500 MHz
18
16
14
12
25
30
35
40
45
50
25
30
35
40
45
50
Output Power (dBm)
4
Output Power (dBm)
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
VGS
VDS
C1
1.0 mF
C2
0.1 mF
C3
0.01 mF
C4
1000 pF
C5
1.0 mF
C8
1000pF
C7
0.01 mF
C6
0.1 mF
R1
C11
24.9
18 pF
C9
10 pF
C12
18 pF
C10
15 pF
L1
22 nH
R2
0
RF
Out
C15
2.4 pF
C17
2.4 pF
C16
0.5 pF
NPT2021
RF
In
C14
3.0 pF
C13
0.5 pF
Description
Bias Sequencing
Parts measured on evaluation board (30-mil thick
RO4350). The PCB’s electrical and thermal ground
is provided using a standard-plated densely packed
via hole array (see recommended via pattern).
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Matching is provided using a combination of
lumped elements and transmission lines as shown
in the simplified schematic above. Recommended
tuning solution component placement, transmission
lines, and details are shown on the next page.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
Parts list
Reference
Value
Tolerance
Manufacturer
Part Number
C1, C5
1.0 µF
10 %
AVX
1210C105KAT2A
C2, C6
C3, C7
C4, C8
C9
0.1 µF
0.01 µF
1000 pF
10 pF
10 %
10 %
10 %
5 %
Kemet
AVX
C1206C104K1RACTU
12061C103KAT2A
C0805C102K1RACTU
ATC800A100J
Kemet
ATC
C10, C11
C12
18 pF
10 %
0.1 pF
0.1 pF
0.1 pF
5%
ATC
ATC800B180K
3.6 pF
1.5 pF
2.4 pF
22 nH
Murata
Murata
ATC
GQM22M5C2H3R6BB01
GQM22M5C2H1R5BB01
ATC800B2R4B
C13
C14, C15
L1, L2
R1
Coilcraft
Panasonic
0807SQ-22N_LB
24.9 Ω
1 %
ERJ-SIDF49R9U-ND
PCB
Rogers RO4350, r = 3.5, 30 mil
6
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
Typical Performance as measured in the 2.5 GHz evaluation board:
CW, VDS = 48 V, IDQ = 350 mA (unless noted)
Gain vs. Output Power over Temperature
Drain Efficiency vs. Output Power over Temperature
70
60
50
40
30
20
10
0
16
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
15
14
13
12
11
25
30
35
40
45
50
25
30
35
40
45
50
Output Power (dBm)
Output Power (dBm)
Quiescent VGS vs. Temperature
-1.1
175 mA
350 mA
525 mA
-1.2
-1.3
-1.4
-1.5
-1.6
-50
-25
0
25
50
75
100
Temperature (°C)
7
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
Typical 2-Tone Performance as measured in the 2.5 GHz evaluation board:
1 MHz Tone Spacing, VDS = 48 V, IDQ = 350 mA, TC = 25°C (unless noted)
2-Tone IMD3 vs. Output Power vs. Quiescent Current
2-Tone Gain vs. Output Power vs. Quiescent Current
-15
15.5
250mA
15
14.5
14
-20
-25
-30
-35
-40
-45
-50
350mA
450mA
550mA
650mA
13.5
13
250mA
12.5
12
350mA
450mA
550mA
650mA
11.5
1
10
100
1
10
100
POUT (W-PEP)
POUT (W-PEP)
2-Tone IMD vs. Output Power
-15
-IMD3
+IMD3
-20
-IMD5
+IMD5
-25
-IMD7
+IMD7
-30
-35
-40
-45
-50
-55
1
10
100
POUT (W-PEP)
8
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Rev. V1
TO-272-2 Plastic Package†
All dimensions shown as inches [millimeters].
†
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Sn .
9
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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