NPT2022 [TE]
HEMT N-CH 48V 100W DC-2GHZ;
| 型号： | NPT2022 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | HEMT N-CH 48V 100W DC-2GHZ |
| 文件： | 总12页 (文件大小：2290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
Features
•
•
•
•
•
•
•
•
•
GaN on Si HEMT D-Mode Amplifier
Suitable for Linear & Saturated Applications
Tunable from DC - 2 GHz
48 V Operation
20 dB Gain @ 900 MHz
60% Drain Efficiency @ 900 MHz
100% RF Tested
TO-272 Package
RoHS* Compliant and 260°C Reflow Compatible
Functional Schematic
Description
The NPT2022 GaN on silicon HEMT D-Mode
amplifier optimized for DC - 2 GHz operation. This
device supports CW, pulsed, and linear operation
with output power levels to 100 W in an industry
standard plastic package with bolt down flange.
2
The NPT2022 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
1
3
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Pin Configuration
Ordering Information
Part Number
NPT2022
Package
1
2
3
RFIN / VG
RFOUT / VD
Pad1
RF Input / Gate
Bulk Quantity
Sample Board
Tape & Reel
RF Output / Drain
Ground / Source
NPT2022-SMB1
NPT2022-TR0250
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also provide
a low thermal resistance heat path.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
RF Electrical Specifications: TC = 25C, VDS = 48 V, IDQ = 600 mA
Parameter
Small Signal Gain
Test Conditions
CW, 900 MHz
Symbol
GSS
Min.
Typ.
21
Max.
Units
dB
-
-
-
-
-
-
-
Saturated Output Power
Drain Efficiency at Saturation
Power Gain
CW, 900 MHz
PSAT
SAT
GP
50.5
62
dBm
%
CW, 900 MHz
-
900 MHz, POUT = 100 W
900 MHz, POUT = 100 W
All phase angles
19
56
20
dB
Drain Efficiency
58
%
Ruggedness: Output Mismatch
VSWR = 10:1, No Device Damage
DC Electrical Characteristics: TC = 25C
Parameter
Test Conditions
Symbol
IDLK
Min.
Typ.
-
Max.
24
12
-0.5
-0.3
-
Units
mA
mA
V
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
On Resistance
VGS = -8 V, VDS = 160 V
VGS = -8 V, VDS = 0 V
-
IGLK
-
-2.5
-2.1
-
-
VDS = 48 V, ID = 24 mA
VT
-1.6
-1.4
0.2
14
VDS = 48 V, ID = 600 mA
VDS = 2 V, ID = 180 mA
VGSQ
RON
V
W
Maximum Drain Current
VDS = 7 V pulsed, pulse width 300 µs
ID,MAX
-
-
A
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
Absolute Maximum Ratings2,3,4
Parameter
Absolute Maximum
Drain Source Voltage, VDS
160 V
Gate Source Voltage, VGS
Gate Current, IG
-10 to 3 V
48 mA
Junction Temperature, TJ
Operating Temperature
Storage Temperature
+200°C
-40°C to +85°C
-65°C to +150°C
2. Exceeding any one or combination of these limits may cause permanent damage to this device.
3. MACOM does not recommend sustained operation near these survivability limits.
4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Thermal Characteristics5
Parameter
Test Conditions
Symbol Typical
1.3
Units
Thermal Resistance
VDS = 48 V, TJ = 200°C
°C/W
RJC
5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should be
used when handling these HBM Class 1B devices.
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
Load-Pull Performance: VDS = 48 V, IDQ = 600 mA, TC = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
(MHz)
ZS
(W)
ZL
(W)
PSAT
(W)
GSS
(dB)
Drain Efficiency
@ PSAT (%)
500
900
1.3 + j0.8
1.1 - j1.3
1.3 - j5.7
1.4 - j6.3
5.8 + j2.5
5.0 + j2.8
3.2 - j1.4
2.3 - j2.3
152
139
133
119
26
22
17
16
71
70
66
66
1800
2000
Impedance Reference
ZS and ZL vs. Frequency
ZL
ZS
Gain vs. Output Power
Drain Efficiency vs. Output Power
28
80
70
26
24
500 MHz
900 MHz
1800 MHz
60
2000 MHz
50
22
40
30
20
10
0
500 MHz
20
18
16
14
900 MHz
1800 MHz
2000 MHz
25
30
35
40
45
50
55
25
30
35
40
45
50
55
Output Power (dBm)
Output Power (dBm)
4
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
Evaluation Board and Recommended Tuning Solution
900 MHz Narrowband Circuit
VGS
VDS
C5
C1
C2
C3
C4
C8
C7
C6
1.0 mF
1.0 mF
0.1 mF
0.01 mF
1000 pF
1000pF
0.01 mF
0.1 mF
C9
10 pF
L1
19.4 nH
C10
33 pF
L2
44 nH
R1
10 W
C14
0.8 pF
RFOUT
C13
C15
NPT2022
18 pF
8.2 pF
RFIN
C12
6.8 pF
C11
15 pF
Description
Bias Sequencing
Turning the device ON
Parts measured on evaluation board (30-mil thick
RO4350). The PCB’s electrical and thermal ground
is provided using a standard-plated densely packed
via hole array (see recommended via pattern).
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Matching is provided using a combination of lumped
elements and transmission lines as shown in the
simplified schematic above. Recommended tuning
solution component placement, transmission lines,
and details are shown on the next page.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
5
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
Evaluation Board and Recommended Tuning Solution
900 MHz Narrowband Circuit
Parts list
Reference
C1, C5
C2, C6
C3, C7
C4, C8
C9
Value
1.0 µF
0.1 µF
0.01 µF
1000 pF
10 pF
Tolerance
10%
Manufacturer
Part Number
AVX
12101C105KAT2A
C1206C104K1RACTU
12061C103KAT2A
C0805C102K1RACTU
ATC800B100J
10%
Kemet
10%
AVX
10%
Kemet
5%
ATC
C10
33 pF
10%
ATC
ATC800B330K
C11
15 pF
10%
ATC
ATC800B150K
C12
6.8 pF
18 pF
0.1 pF
10%
ATC
ATC800B6R8B
C13
ATC
ATC800B180K
C14
0.8 pF
8.2 pF
10 Ω
0.1 pF
0.1 pF
1%
ATC
ATC
ATC800B0R8B
C15
ATC800B8R2B
R1
Panasonic
ERJ-2RKF10R0X
0806SQ-19NJLB
4 turn, 5mm ID
L1
19.4 nH
~44 nH
5%
Coilcraft
L2
10%
20 AWG Cu Wire
Rogers RO4350, er=3.5, 30 mil
PCB
6
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
Typical performance as measured in the 900 MHz evaluation board:
CW, VDS = 48 V, IDQ = 600 mA (unless noted)
Gain vs. Output Power over Temperature
Drain Efficiency vs. Output Power over Temperature
22.0
70
+25°C
-40°C
+85°C
21.5
21.0
20.5
20.0
60
50
40
30
20
10
0
19.5
+25°C
-40°C
+85°C
19.0
18.5
18.0
30
35
40
45
50
55
30
35
40
45
50
55
Output Power (dBm)
Output Power (dBm)
Quiescent VGS vs. Temperature
-1.20
300 mA
-1.25
-1.30
-1.35
-1.40
-1.45
-1.50
-1.55
600 mA
900 mA
-50
-25
0
25
50
75
100
Temperature (°C)
7
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
Typical 2-Tone performance as measured in the 900 MHz evaluation board:
1 MHz Tone Spacing, VDS = 48 V, IDQ = 600 mA, TC = 25°C (unless noted)
2-Tone Gain vs. Output Power vs. Quiescent Current
2-Tone IMD3 vs. Output Power vs. Quiescent Current
-15
22.5
450mA
-20
22.0
21.5
21.0
600mA
750mA
-25
900mA
1050mA
-30
-35
-40
-45
-50
20.5
20.0
19.5
450mA
600mA
750mA
900mA
1050mA
1
10
POUT (W-PEP)
100
500
1
10
100
POUT (W-PEP)
2-Tone IMD vs. Output Power
-15
-IMD3
+IMD3
-20
-IMD5
-25
-30
-35
-40
-45
-50
-55
+IMD5
-IMD7
+IMD7
1
10
POUT (W-PEP)
100
500
8
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
Evaluation Board and Recommended Tuning Solution
130 - 940 MHz Broadband Circuit
Parts list
Reference
C1
C2, C7
C3, C6
C4, C5
C8
Value
150 µF
1.0 µF
Tolerance
20%
10%
10%
10%
20%
5%
Manufacturer
Nichicon
AVX
Kemet
AVX
United Chemi-Con
ATC
Part Number
UPW1C151MED
1210C105KAT2A
C1206C104K1RACTU
12061C103KAT2A
ELXY 630ELL271MK25S
ATC100B180J
ATC100B102J
ATC100B1R5B
ATC100B5R6B
ATC100B150J
ATC600F221J
ATC600F120F
ATC100B820K
ATC100B4R7B
ATC100B2R4B
ATC100B3R9B
ATC100B1R0B
ERJ-6ENF49R9V
ERJ-1TNF4700U
ERJ-6RQFR33V
ERJ-1TNF24R9U
2673000801
0.1 µF
0.01 µF
270 µF
18 pF
1000 pF
1.5 pF
5.6 pF
15 pF
220 pF
12 pF
82 pF
4.7 pF
2.4 pF
3.9 pF
1.0 pF
49.9 Ω
470 Ω
C9
C10
C11
C12
C13
C14
C15
5%
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
0.1 pF
0.1 pF
5%
5%
2%
10%
0.1 pF
0.1 pF
0.1 pF
0.1 pF
1%
C16, C17
C18
C19
C20
C21
R1
R2
R3
R4, R5
F1
F2, F3
L1
ATC
ATC
ATC
Panasonic
Panasonic
Panasonic
Panasonic
Fair-Rite
Anaren
Coilcraft
Coilcraft
Coilcraft
1%
1%
1%
-
0.33 Ω
24.9 Ω
Material 73
4:1 Transformer
25 nH
-
XMT031B5012
0908SQ-25NJL
A03TJL
5%
5%
5%
L2, L4
L3, L5
8.0 nH
5.0 nH
A02TJL
PCB
Rogers RO4350, er=3.5, 30 mil
9
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
Evaluation Board and Recommended Tuning Solution
130 - 940 MHz Broadband Circuit
F1
VGS
VDS
C10
1000 pF
C8
270 mF
C1
150 mF
C2
1.0 mF
C3
0.1 mF
C4
0.01 mF
R3
0.33 W
L1
25 nH
C9
18 pF
C7
C5
C6
1.0 mF
0.01 mF
0.1 mF
R1
R2
L2
49.9 W
470 W
8 nH
L4
8.0 nH
L5
5.0 nH
F3
4:1
RF
Out
C16
82 pF
R4
24.9 W
L3
5.0 nH
F2
4:1
C19
2.4 pF
C18
4.7 pF
C21
1.0 pF
C20
3.9 pF
RF
In
NPT2022
C17
C14
220 pF
C12
5.6 pF
C15
12 pF
C11
1.5 pF
C13
15 pF
82 pF
R5
24.9 W
Performance vs. Frequency at POUT= PSAT
Performance vs. Frequency at POUT = 49 dBm
30
30
70
65
60
55
50
45
Gain
Drain Eff
Psat
25
20
15
10
5
25
20
65
60
55
50
15
Gain
10
Drain Eff
45
5
40
0
200
400
600
800
1,000
0
200
400
600
800
1,000
Frequency (MHz)
Frequency (MHz)
Performance vs. Output Power (f = 760 MHz)
Small Signal s-parameters vs. Frequency
60
50
40
30
20
10
14.5
35
0
S21
14.0
13.5
30
25
20
15
10
5
S11
S22
-5
-10
-15
-20
-25
Gain
13.0
Drain Eff
12.5
12.0
11.5
0
55
-30
1,000
25
30
35
40
45
50
0
200
400
600
800
POUT (dBm)
Frequency (MHz)
10
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
TO-272-2 Plastic Package†
All dimensions shown as inches [millimeters].
†
Meets JEDEC moisture sensitivity level 3 requirements.
Plating is Matte Sn.
11
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
GaN on Silicon General Purpose Amplifier
DC - 2 GHz, 48 V, 100 W
NPT2022
Rev. V3
MACOM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with MACOM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or
in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM
assumes no responsibility for errors or omissions in these materials. MACOM may make changes to
spec-
ifications and product descriptions at any time, without notice. MACOM makes no commitment to update the in-
formation and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future chang-
es to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise, to
any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR
WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. MACOM FURTHER DOES NOT WARRANT THE ACCURACY
OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CONTAINED WITHIN
THESE MATERIALS. MACOM SHALL NOT BE LIABLE FOR ANY SPECIAL, INDIRECT, INCIDENTAL, OR
CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVENUES OR LOST PROFITS,
WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
MACOM products are not intended for use in medical, lifesaving or life sustaining applications. MACOM
customers using or selling MACOM products for use in such applications do so at their own risk and agree to
fully indemnify MACOM for any damages resulting from such improper use or sale.
12
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
DC-0006486
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