NPT25015 [TE]
Gallium Nitride 28V, 23W RF Power Transistor;
| 型号： | NPT25015 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Gallium Nitride 28V, 23W RF Power Transistor |
| 文件： | 总8页 (文件大小：624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT25015
Gallium Nitride 28V, 23W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
•ꢀ Optimized for CW, pulsed, WiMAX, and other
applications from DC - 3000 MHz
•ꢀ 23W P3dB peak envelope power (PEP)
•ꢀ 1.5W linear power @ 2% EVM for single carrier
OFDM, 10.3dB peak/average,
3.5MHz channel bandwidth, 14dB gain,
23.5% efficiency, 2500-2700MHz
•ꢀ 100% RF tested
DC - 3000 MHz
23 Watt, 28 Volt
GaN HEMT
•ꢀ Thermally-enhanced industry standard package
•ꢀ High reliability gold metallization process
•ꢀ Lead-free and RoHS compliant
•ꢀ Subject to EAR99 export control
Typical 2-Tone Performance: VDS = 28V, IDQ = 200mA, Frequency = 2500MHz, Tone Spacing = 1.0MHz, TC = 25°C
Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB,PEP
P1dB,PEP
GSS
Peak Envelope Power at 3dB Compression
Peak Envelope Power at 1dB Compression
Small Signal Gain
20
-
25
15
-
W
W
-
15.0
-
13.0
53
14.0
58
dB
%
h
DrainꢀEfficiencyꢀatꢀ3dBꢀCompression
Typical OFDM Performance: VDS = 28V, IDQ = 200mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,
continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF. Frequency =
2500 - 2700MHz. POUT,AVG = 1.5W, TC = 25°C. Measured in Load Pull System (Refer to Table 1 and Figure 1)
Symbol
Parameter
Typ
Units
GP
h
Power Gain
14.0
23.5
2.0
dB
%
DrainꢀEfficiency
Error Vector Magnitude
EVM
%
NPT25015
Page 1
NDS-004 Rev 4, April 2013
NPT25015
DC Specifications: TC = 25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 8mA)
VBDS
IDLK
100
-
-
-
-
V
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
4
mA
On Characteristics
Gate Threshold Voltage
(VDS = 28V, ID = 8mA)
VT
-2.3
-2.0
-
-1.8
-1.5
0.45
-1.3
-1.0
V
V
W
Gate Quiescent Voltage
(VDS = 28V, ID = 200mA)
VGSQ
RON
On Resistance
(VGS = 2V, ID = 60mA)
0.50
Drain Current
ID,MAX
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle)
-
5.0
-
A
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
PT
Drain-Source Voltage
100
-10 to 3
28
V
V
Gate-Source Voltage
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
W
qJC
6.25
°C/W
°C
TSTG
TJ
-65 to 150
200
Operating Junction Temperature
°C
HBM
MM
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
1A (>250V)
M1 (>50V)
Moisture Sensitivity Level (Per IPC/JEDEC J-STD-20) @ 260°C Peak
Package Temperature
MSL
3
NPT25015
Page 2
NDS-004 Rev 4, April 2013
NPT25015
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =200mA, TA=25°C unless otherwise noted
DQ
Table 1: Optimum Impedance Characteristics for Linear OFDM Tuning, single carrier OFDM waveform 64-QAM 3/4, 8
burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF
Drain
Efficiency (%)
Frequency (MHz)
Z (W)
S
Z (W)
L
P (W)
OUT
Gain (dB)
2500
2600
2700
5.2 - j 1.6
4.6 - j 1.9
4.0 - j 2.2
3.3 + j 1.7
3.1 + j 2.7
2.9 + j 4.3
1.5
14.5
14.5
14.4
25
25
24
1.5
1.5
Table 2: Optimum Impedance Characteristics for CW PSAT,ꢀEfficiency,ꢀandꢀGain
Drain
Efficiency (%)
Frequency (MHz)
Z (W)
S
Z (W)
L
P
(W)
G
(dB)
SS
SAT
2500
3.7 - j 4.7
6.9 - j 1.2
23
14.5
60
Z
is the source impedance
presented to the device.
S
Z is the load impedance
L
presented to the device.
Figure 1 - Optimum Impedance Characteristics for OFDM Tuning, VDS = 28V, IDQ = 200mA
NPT25015
Page 3
NDS-004 Rev 4, April 2013
NPT25015
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =200mA, TA=25°C unless otherwise noted
DQ
Figure 2 - Typical OFDM Performance
at 2500MHz and 28V versus IDQ
Typical Device Characteristics
VDS=28V, I =200mA, TA=25°C unless otherwise noted
DQ
Figure 3 - P
ꢀandꢀDrainꢀEfficiency
3dB,PEP
versus Temperature at 2500MHz, Application Board
Figure 5 - MTTF of NRF1 devices as a
function of junction temperature
Figure 4 - Power Derating Curve
NPT25015
Page 4
NDS-004 Rev 4, April 2013
NPT25015
APP-NPT25015-25, 2500-2700MHz Linear WiMAX Application Board
802.16eꢀSingleꢀCarrierꢀOFDM,ꢀ64-QAMꢀ3/4,ꢀ8-burst,ꢀ20msꢀframeꢀ75%ꢀfilled,ꢀ10MHzꢀchannelꢀbandwidth,ꢀPAR=10.3dBꢀ@ꢀ0.01%ꢀCCDF
Detailed design information and data available at www.nitronex.com
VGS
VDS
RFIN
RFOUT
Figure 6 - APP-NPT25015-25 Demonstration Board and Schematic
Table 2: APP-NPT25015-25 Demonstration Board Bill of Materials
Name
C1
Value
5.6pF
2.2pF
3.3pF
1.0uF
0.1uF
Tolerance
+/- 0.1pF
+/- 0.1pF
+/- 0.1pF
10%
Vendor
ATC
Vendor Number
ATC600F5R6B
C2
ATC
ATC600F2R2B
C3
ATC
ATC600F3R3B
C4, C9
C5, C8
C6, C7
C10
Panasonic
Kemet
ECJ-5YB2A105M
C1206C104K1RACTU
12061C103KAT2A
UPW1C151MED
ELXY630ELL271MK25S
ATC600F1R0B
10%
0.01uF
150uF
270uF
1.0pF
33pF
10%
AVX
20%
Nichicon
United Chemi-Con
ATC
C11
20%
C12
+/- 0.1pF
5%
C13, C15
C14, C16
PA1
ATC
ATC600F330B
1000pF
--
10%
Kemet
C0805C102K1RACTU
NPT25015D
--
--
R1
49.9 ohm
0.33 ohm
--
1%
Panasonic
Panasonic
--
ERJ-2RKF49R9X
ERJ-6RQFR33V
Coin to mount PA1
R3
1%
--
--
Substrate
Rogers
R04350, t = 30mil er = 3.5
NPT25015
Page 5
NDS-004 Rev 4, April 2013
NPT25015
APP-NPT25015-25, 2500-2700MHz Linear WiMAX Application Board
802.16e Single Carrier OFDM, 64-QAM 3/4, 8-burst, continuous frame data, 10MHz channel bandwidth, PAR=10.3dB @ 0.01% CCDF
Detailed design information and data available at www.nitronex.com
40
35
30
25
20
15
10
5
8
7
6
5
4
3
2
1
0
40
35
30
25
20
15
10
5
8
7
6
5
4
3
2
1
0
Gain
Gain
DE
EVM (%)
DE
EVM (%)
0
0
23
25
27
29
31
33
35
37
39
23
25
27
29
31
33
35
37
39
Pout (dBm)
Pout (dBm)
Figure 7 - Gain,ꢀEfficiency,ꢀEVMꢀatꢀ2500MHz
Figure 8 - Gain,ꢀEfficiency,ꢀEVMꢀatꢀ2600MHz
40
8
7
6
5
4
3
2
1
0
Gain
DE
35
EVM (%)
30
25
20
15
10
5
0
23
25
27
29
31
33
35
37
39
Pout (dBm)
Figure 9 - Gain,ꢀEfficiency,ꢀEVMꢀatꢀ2700MHz
NPT25015
Page 6
NDS-004 Rev 4, April 2013
NPT25015
Ordering Information
Part Number Order Multiple Description
NPT25015DT
NPT25015DR
97
Tube; NPT25015 in D (PSOP2) Package
1500
Tape and Reel; NPT25015 in D (PSOP2) Package
1:ꢀToꢀfindꢀaꢀNitronexꢀcontactꢀinꢀyourꢀarea,ꢀvisitꢀourꢀwebsiteꢀatꢀhttp://www.nitronex.com
Figure 10 - D Package Dimensions and Pinout
Inches
Min
Millimeters
A
Dim
A
Max
0.196
0.157
0.123
0.870
0.244
Min
Max
4.98
3.99
3.12
22.1
6.19
0.189
0.150
0.107
0.071
0.230
4.80
3.81
2.72
1.80
5.84
C
B
1. Gate
C
2. Gate
8
1
7
6
3
5
4
3. Gate
D
4. Gate
E
5. Drain
D
B
E
9
6. Drain
f
0.050 BSC
1.270 BSC
D/2
7. Drain
F
0.0138
0.055
0.000
0.075
0.016
0°
0.0192
0.061
0.004
0.098
0.035
8°
0.35
1.40
0.00
1.91
0.41
0°
0.49
1.55
0.10
2.50
0.89
8°
8. Drain
2
9. Source Pad
G
G1
H
(Bottom)
A/2
Chamfer
L
H
G
m
G1
SEATING
PLANE
m
L
SEATING PLANE
F
(8X)
f
(6X)
Figure 11 - Mounting Footprint
.150
.055
.105
.100
Solder Paste
.020" X .040"
(8X Typ)
R.016 (4X Typ)
.140 .145 .176
.180
Solder Paste
.080" X .120"
(Typ)
Heat Sink
Pedestal
.030
Solder Mask
.005" Relief
(Typ)
PWB Pad
(8X Typ)
PWB Cutout
NPT25015
Page 7
NDS-004 Rev 4, April 2013
NPT25015
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
Nitronex,ꢀLLCꢀreservesꢀtheꢀrightꢀtoꢀmakeꢀcorrections,ꢀmodifications,ꢀenhancements,ꢀimprovementsꢀandꢀotherꢀchangesꢀtoꢀ
its products and services at any time and to discontinue any product or service without notice. Customers should obtain
the latest relevant information before placing orders and should verify that such information is current and complete. All
products are sold subject to Nitronex terms and conditions of sale supplied at the time of order acknowledgment. The latest
information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
Nitronexꢀwarrantsꢀperformanceꢀofꢀitsꢀpackagedꢀsemiconductorꢀorꢀdieꢀtoꢀtheꢀspecificationsꢀapplicableꢀatꢀtheꢀtimeꢀofꢀsaleꢀinꢀ
accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters
of each product is not necessarily performed.
Nitronex assumes no liability for applications assistance or customer product design. Customers are responsible for their
product and applications using Nitronex semiconductor products or services. To minimize the risks associated with
customer products and applications, customers should provide adequate design and operating safeguards.
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which Nitronex products or services are used.
Reproduction of information in Nitronex data sheets is permitted if and only if said reproduction does not alter any of the
information and is accompanied by all associated warranties, conditions, limitations and notices. Any alteration of the
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officers,ꢀemployees,ꢀsubsidiaries,ꢀaffiliates,ꢀdistributors,ꢀandꢀitsꢀsuccessorsꢀharmlessꢀagainstꢀallꢀclaims,ꢀcosts,ꢀdamages,ꢀ
and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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regarding the design or manufacture of said products.
Nitronex and the Nitronex logo are registered trademarks of Nitronex, LLC.
All other product or service names are the property of their respective owners.
©Nitronex, LLC 2012. All rights reserved.
NPT25015
Page 8
NDS-004 Rev 4, April 2013
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