NPTB00025 [TE]
Gallium Nitride 28V, 25W RF Power Transistor;
| 型号： | NPTB00025 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Gallium Nitride 28V, 25W RF Power Transistor |
| 文件： | 总6页 (文件大小：683K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPTB00025
Gallium Nitride 28V, 25W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for broadband operation from
DC - 4000MHz
• 25W P3dB CW narrowband power
• 10W P3dB CW broadband power from 500-1000MHz
• Characterized for operation up to 32V
• 100% RF tested
Broadband
25 Watt, 28 Volt
GaN HEMT
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to EAR99 export control
RF Specifications (CW): VDS = 28V, IDQ = 225mA, Frequency = 3000MHz, TC = 25°C, Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB
P1dB
GSS
h
Average Output Power at 3dB Gain Compression
Average Output Power at 1dB Gain Compression
Small Signal Gain
22
18
25
21
-
-
-
-
W
W
12.5
60
13.5
65
dB
%
Drain Efficiency at 3dB Gain Compression
Output mismatch stress, VSWR = 10:1, all phase
angles, POUT = PSAT
y
No Performance Degradation After Test
Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
IG
Drain-Source Voltage
100
-10 to 3
40
V
V
Gate-Source Voltage
Gate Current
mA
W
PT
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
33
qJC
TSTG
TJ
5.25
°C/W
°C
-65 to 150
200
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
°C
HBM
MM
1A (>250V)
M1 (>50V)
NPTB00025
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NDS-006 Rev. 4, April 2013
NPTB00025
DC Specifications: TC = 25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = -8V, ID = 8mA)
VBDS
IDLK
100
-
-
-
V
Drain-Source Leakage Current
(VGS = -8V, VDS = 60V)
1
5
mA
On Characteristics
Gate Threshold Voltage
(VDS = 28V, ID = 8mA)
VT
-2.3
-2.0
-
-1.8
-1.5
-1.3
-1.0
V
V
W
Gate Quiescent Voltage
(VDS = 28V, ID = 225mA)
VGSQ
RON
On Resistance
(VGS = 2.0V, ID = 60mA)
0.44
0.55
Drain Current
ID
(VDS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, VGS = 2.0V)
4.9
5.4
-
A
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =225mA, TA=25°C unless otherwise noted
DQ
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency (MHz)
ZS (W)
ZL (W)
800
2000
3000
3.9 + j5.9
3.7 - j5.1
4.7 - j15.3
12.2 + j6.1
7.7 - j1.1
7.4 - j5.8
Z is the source impedance
S
presented to the device.
Z is the load impedance
L
presented to the device.
Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 225mA
NPTB00025
Page 2
NDS-006 Rev. 4, April 2013
NPTB00025
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =225mA, TA=25°C unless otherwise noted.
DQ
Figure 2 - Typical CW Performance,
Over Current, Frequency = 3000MHz
Figure 3 - Typical CW Performance
Over Frequency
Figure 4 - Typical CW Performance Over Voltage,
Impedances Held Constant, Frequency = 1800MHz
Typical Device Characteristics
VDS=28V, I =225mA, TA=25°C unless otherwise noted.
DQ
Figure 5 - MTTF of NRF1 Devices as a
Function of Junction Temperature
Figure 6 - Typical CW Performance
in Nitronex Test Fixture, Frequency = 3000MHz
NPTB00025
Page 3
NDS-006 Rev. 4, April 2013
NPTB00025
NPTB00025, 3000MHz CW Production Test Fixture
VDS=28V, I =225mA, TA=25°C unless otherwise noted. Additional design information and data available at www.nitronex.com.
DQ
VGS
C1
C3
C2
C4
+
VGS
VDS
VDS
+
C6
C7
C10
R3
R2
C8
C9
C5
TL6
65mils
600mils
TL7
65mils
600mils
RFOUT
RFIN
NPTB00025
RFOUT
C12
RFIN
TL5
65mils
930mils
Nitronex
TL4
265mils
441mils
C11
TL1
65mils
345mils
TL2
65mils
397mils
TL3
281mils
424mils
NPTB00020
8/01/2006
C13
Figure 7 - NPTB00025 3000MHz Test Fixture
Table 2: NPTB00025 3000MHz Test Fixture Bill of Materials
Name
Value
150uF
270uF
0.1uF
Vendor
Nichicon
United Chmi-Con
Kemet
Part Number
C1
C10
UPW1C151MED
ELXY630ELL271MK25S
C1206C104K1RACTU
12061C103KAT2A
ECJ-5YB2A105M
ATC600F5R6CT
C2, C8
C3, C7
C4, C9
C5, C6, C11, C12
C13
0.01uF
1.0 uF
5.6pF
1.2pF
AVX
Panasonic
ATC
ATC
ATC600F1R2AT
R2
49.9 ohm
0.33 ohm
-
Panasonic
Panasonic
Taconic
ERJ-6ENF49R9V
ERJ-6RQFR33V
R3
Substrate
RF35, t=30mil, e =3.5
r
NPTB00025
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NDS-006 Rev. 4, April 2013
NPTB00025
1
Ordering Information
Part Number
Description
NPTB00025B
NPTB00025 in AC200B-2 Metal-Ceramic Bolt-Down Package
1: To find a Nitronex contact in your area, visit our website at http://www.nitronex.com
Figure 8 - AC200B-2 Metal-Ceramic Package Dimensions and Pinout (all dimensions are in inches [mm])
NPTB00025
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NDS-006 Rev. 4, April 2013
NPTB00025
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100 (telephone)
+1.919.807.9200 (fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
Important Notice
Nitronex, LLC reserves the right to make corrections, modifications, enhancements, improvements and other changes to
its products and services at any time and to discontinue any product or service without notice. Customers should obtain
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information from Nitronex can be found either by calling Nitronex at 1-919-807-9100 or visiting our website at
www.nitronex.com.
Nitronex warrants performance of its packaged semiconductor or die to the specifications applicable at the time of sale in
accordance with Nitronex standard warranty. Testing and other quality control techniques are used to the extent Nitronex
deems necessary to support the warranty. Except where mandated by government requirements, testing of all parameters
of each product is not necessarily performed.
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NPTB00025
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NDS-006 Rev. 4, April 2013
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