PH1090-350L [TE]

Avionics Pulsed Power Transistor - 350 Watts,1030-1090 MHz, 250us Pulse, 10% Duty; 航空电子脉冲功率晶体管 - 350瓦， 1030年至1090年兆赫，脉冲250US ， 10 ％占空比


型号：	PH1090-350L
厂家：	TE CONNECTIVITY
描述：	Avionics Pulsed Power Transistor - 350 Watts,1030-1090 MHz, 250us Pulse, 10% Duty 航空电子脉冲功率晶体管 - 350瓦， 1030年至1090年兆赫，脉冲250US ， 10 ％占空比晶体晶体管脉冲电子航空
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中文：	中文翻译
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Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty

PH1^P0^H9¹0⁰-⁹3^0-5³0⁵⁰L^L

Avionics Pulsed Power Transistor - 350 Watts,

1030-1090 MHz, 250 s Pulse, 10% Duty

Features

Outline Drawing¹

•

NPN Silicon Microwave Power Transistor

Common Base Configuration

Broadband Class C Operation

High Efficiency Interdigitated Geometry

Diffused Emitter Ballasting Resistors

Gold Metalization System

Internal Input and Output Impedance Matching

Hermetic Metal/Ceramic Package

Description

M/A-COM’s PH1090-350L is a silicon bipolar NPN power

transistor intended for use in L-band, 1.2 - 1.4 GHz avionics

equipment such as IFF, mode-S and TCAS systems. Designed

for common-base, class C, broadband pulsed power applica-

tions, the PH1090-350L delivers 7.5 dB of gain at 350 watts of

output power when operating with long pulse length (250µS), at

10 percent duty cycle. The transistor is housed in a 2-lead,

rectangular metal-ceramic flange package, with internal input

and output impedance matching networks. Diffused emitter

ballast resistors and gold metalization assure ruggedness and

long-term reliability.

Notes: (unless otherwise specified)

1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)

Narrowband Test Fixture Impedance

F (MHz)

Z _IF(Ω)

Z _OF(Ω)

1090

2.5 - j1.5

1.1 + j0.9

Absolute Maximum Rating at 25°C

Parameter

Symbol

Rating

Units

Collector-Emitter Voltage

V_CES

TEST FIXTURE

INPUT

CIRCUIT

TEST FIXTURE

OUTPUT

CIRCUIT

Emitter-Base Voltage

V_EBO

I_C

3.0

Collector Current (Peak)

Total Power Dissipation

@ +25°C

P_TOT

750

Ω

Storage Temperature

T_stg

T_j

-65 to +200

200

°C

Junction Temperature

Electrical Specifications at 25°C

Symbol

BV_CES

Parameter

Collector-Emitter Breakdown I_C=250mA

Test Conditions

Min

8.0

Max

Units

°C/W

0.2

I_CES

R_TH(JC)

P_in

Collector-Emitter Leakage

Thermal Resistance

Input Power

V_CE=45 V

V_CC=45 V, P_in=350 W, f=1090 MHz

G_P

Power Gain

Collector Efficiency

Input Return Loss

R_L

VSWR-T Load Mismatch Tolerance

VSWR-S Load Mismatch Stability

2:1

1.5:1

V2.00

M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087

Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020

www.macom.com

AMP and Connecting at a Higher Level are trademarks.

Specifications subject to change without notice.

Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty

PH1090-350L

Test Fixture Electrical Schematic

Top View