PH1214-300M [TE]
Radar Pulsed Power Transistor, 300 Watts,1.20-1.40 GHz, 150 mS Pulse, 10% Duty; 雷达脉冲功率晶体管， 300瓦， 1.20-1.40千兆赫， 150毫秒脉冲， 10 ％占空比
| 型号： | PH1214-300M |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Radar Pulsed Power Transistor, 300 Watts,1.20-1.40 GHz, 150 mS Pulse, 10% Duty |
| 文件： | 总4页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Radar Pulsed Power Transistor, 300 Watts,
1.20-1.40 GHz, 150 µS Pulse, 10% Duty
12/06/01
Rev. 0
Features
Outline Drawing
Q
Q
Q
Q
Q
Q
Q
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings @ 25 °C
Parameter
Symbol
Rating
Units
90
V
VCES
Collector-Emitter Voltage
3.0
V
A
VEBO
IC
Emitter-Base Voltage
21.0
620
Collector Current (Peak)
Total Power Dissipation
@ +45 °C
W
PTOT
-65 to +200
200
°C
°C
TSTG
Tj
Storage Temperature
Junction Temperature
Electrical Characteristics @ 25 °C
Parameter
Symbol
Min.
Max.
Units
Test Conditions
Collector-Emitter Breakdown
Voltage
90
-
V
BVCES
IC=80 mA
VCE=40 V
Collector-Emitter Leakage
Current
-
10
mA
ICES
Thermal Resistance
-
300
8.75
50
10
-
.25
°C/W
W
RTH(JC)
PO
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
VCC=40 V, Pin = 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Output Power
-
Power Gain
-
dB
%
GP
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
-
η
RL
-
dB
-
VSWR-T
VSWR-S
2:1
1.5:1
-
-
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty
PH1214-300M
12/06/01
Rev. 0
Sample Test Data
(Broadband test fixture matched to 50 Ω.)
P1dB Overdrive
VSWR-S
Freq.
Pin
Pout
(W)
Gain
(dB)
Eff.
(%)
Droop
(dB)
RL
∆Gain
Ic (A)
(GHz) (W)
(dB)
(dB)
Pout
(W)
Gain
(dB)
Droop
(dB)
Eff.
(%)
∆ Po
1.5:1
2:1
2.5:1
(dB)
1.2
1.3
1.4
40
40
40
406
355
10.06
9.48
9.24
63.2 16.1
0.1
18
15
16
451
412
378
0.46
0.65
0.51
9.52
9.12
8.75
0.38
0.32
0.35
59.8
58.2
56
S
S
S
59.3
15
0.04
0.06
S
S
S
S
S
S
0.82
335.8
58.4 14.4
Note: ∆Po(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 40W.
Power Output Curves
PH1214-300M Pout vs. Pin
500
400
300
200
100
0
1.2 GHz
1.3 GHz
1.4 GHz
0
10
20
30
40
50
60
Pin (W)
2
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty
PH1214-300M
12/06/01
Rev. 0
Test Fixture Impedances
Test Fixture Circuit Dimensions
3
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty
PH1214-300M
12/06/01
Rev. 0
Test Fixture Assembly
Specifications subject to change without notice.
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
4
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