SW-259PIN [TE]

GaAs SPST Switch DC - 2.5 GHz; 砷化镓单刀单掷开关DC - 2.5 GHz的
SW-259PIN
型号: SW-259PIN
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

GaAs SPST Switch DC - 2.5 GHz
砷化镓单刀单掷开关DC - 2.5 GHz的

开关 射频 微波
文件: 总3页 (文件大小:106K)
中文:  中文翻译
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GaAs SPST Switch  
DC - 2.5 GHz  
SW-259  
V3.00  
Features  
SO-8  
Very Low Power Consumption: 50 µW  
PIN 8  
.2284-.2440  
Low Insertion Loss: 1.0 dB  
High Isolation: 35 dB up to 2 GHz  
Very High Intercept Point: 46 dBm IP 3  
.1497-.1574  
(3.80-4.00)  
- B -  
(5.80-6.20)  
.010(0.25) M B M  
Orientation  
mark  
PIN 1  
Nanosecond Switching Speed  
Temperature Range: -40˚C to + 85˚C  
Tape and Reel Packaging Available 1  
.0099-0.0196  
x 45° Chamfer  
(0.25-0.50)  
.1890-.1968  
(4.80-5.00)  
- A -  
.0532-.0688  
(1.35-1.75)  
0°-8°  
- C -  
.004 (0.10)  
.016-.050  
.0040-.0098  
(0.10-0.25)  
(0.40-1.27)  
Description  
.0075-0.0098  
(0.19-0.25)  
M/A-COM’s SW-259 is a GaAs MMIC SPST terminated switch  
in a low cost SOIC 8-lead surface mount plastic package.  
The SW-259 is ideally suited for use where very low power  
consumption is required. Typical applications include trans-  
mit/receive switching, switch matrices, and filter banks in  
systems such as: radio and cellular equipment, PCM, GPS,  
fiber optic modules, and other battery powered radio  
equipment.  
.013-.020 TYP.  
(0.33-0.51)  
.050(1.27) BSC.  
.010(0.25) M C A M B S  
8- Lead SOP outline dimensions  
Narrow body .150  
(All dimensions per JEDEC No. MS-012-AA, Issue C)  
Dimensions in ( ) are in mm.  
Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)  
.xx = ± 0.02 (.x = ±0.5)  
Ordering Information  
The SW-259 is fabricated with a monolithic GaAs MMIC  
using a mature 1-micron process. The process features full  
chip passivation for increased performance and reliability.  
Model No.  
SW-259 PIN  
SW-259TR  
Package  
SOIC 8-Lead Plastic  
Forward Tape & Reel  
Reverse Tape & Reel  
SW-259RTR  
Electrical Specifications, T = +25°C  
A
Parameter  
Test Conditions2  
Unit  
Min.  
Typ.  
Max  
Insertion Loss  
DC – 0.1 GHz  
DC – 0.5 GHz  
DC – 1.0 GHz  
DC – 2.0 GHz  
dB  
dB  
dB  
dB  
0.5  
0.8  
1.0  
1.4  
0.6  
1.0  
1.2  
1.6  
Isolation  
DC – 0.1 GHz  
DC – 0.5 GHz  
DC – 1.0 GHz  
DC – 2.0 GHz  
dB  
dB  
dB  
dB  
62  
55  
45  
32  
65  
58  
48  
35  
VSWR On  
Off  
DC – 2.0 GHz  
DC – 2.0 GHz  
1.2:1  
1.2:1  
Trise, Tfall  
Ton, Toff  
Transients  
10% to 90% RF, 90% to 10% RF  
50% Control to 90% RF, 50% Control to 10% RF  
In Band  
nS  
nS  
mV  
4
8
35  
One dB  
Compression Point  
Input Power  
Input Power  
0.05 GHz  
0.5 – 2.0 GHz  
dBm  
dBm  
18  
23  
2nd Order  
Intercept  
Measured Relative  
to Input Power  
0.05 GHz  
dBm  
dBm  
55  
68  
0.5 – 2.0 GHz  
(for two-tone input power up to +5 dBm)  
3rd Order  
Intercept  
Measured Relative  
to Input Power  
0.05 GHz  
0.5 – 2.0 GHz  
dBm  
dBm  
40  
46  
(for two-tone input power up to +5 dBm)  
1. Refer to "Tape and Reel Packaging" Section, or contact factory.  
2. All measurements with 0, -5 control voltages at 1 GHz in a 50system, unless otherwise specified.  
Specifications Subject to Change Without Notice.  
M/A-COM, Inc.  
1
North America: Tel. (800) 366-2266  
Fax (800) 618-8883  
Asia/Pacific: Tel. +81 3 3263 8761  
Fax +81 3 3263 8769  
Europe: Tel. +44 (1344) 869 595  
Fax +44 (1344) 300 020  
GaAs SPST Switch  
SW-259  
V3.00  
Absolute Maximum Ratings1  
Functional Schematic  
Parameter  
Absolute Maximum1,2  
GND  
RF1 GND  
RF2  
Max. Input Power  
0.05 GHz  
8
7
6
5
+27 dBm  
0.5 – 2 GHz  
+34 dBm  
Control Voltage  
Storage Temperature  
+5V, -8.5V  
-65°C to 150°C  
1. Operation of this device above any one of these parameters may  
cause permanent damage  
2. When the RF Input power is applied to a terminated port, the  
absolute maximum is +32 dBm.  
1
2
3
4
GND  
A
GND  
B
Pin Configuration  
Typical Performance  
Pin No.  
Description  
INSERTION LOSS vs FREQUENCY  
2.0  
1
2
3
4
5
6
7
8
GND  
A
+85°C  
+25°C  
1.5  
B
1.0  
GND  
RF2  
GND  
GND  
RF1  
0.5  
+40°C  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
FREQUENCY (GHz)  
ISOLATION vs FREQUENCY  
Truth Table  
90  
80  
70  
60  
50  
40  
30  
20  
10  
Control Inputs  
Condition of Switch  
A
1
0
B
RF STATE  
0
1
On  
Off  
"0" – 0 – -0.2V @ 20 µA max.  
"1" – -5V @ 20µA Typ to -8V @ 600 µA max.  
0
0.5  
1.0  
1.5  
2.0  
2.5  
FREQUENCY (GHz)  
Electrical Schematic  
Q1  
Q3  
VSWR vs FREQUENCY  
RF2  
RF1  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
Q4  
Q2  
B
A
0
0.5  
1.0  
1.5  
2.0  
2.5  
FREQUENCY (GHz)  
Specifications Subject to Change Without Notice.  
2
M/A-COM, Inc.  
North America: Tel. (800) 366-2266  
Fax (800) 618-8883  
Asia/Pacific: Tel. +81 3 3263 8761  
Fax +81 3 3263 8769  
Europe: Tel. +44 (1344) 869 595  
Fax +44 (1344) 300 020  
GaAs SPST Switch  
SW-259  
V3.00  
Swept Data Characterized in 75 Ohms  
ISOLATION vs FREQUENCY  
S22 (On) vs FREQUENCY  
0
-5  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
0
0.2  
0.4  
0.6  
0.8  
1
0
0.2  
0.4  
0.6  
0.8  
1
FREQUENCY (GHz)  
FREQUENCY (GHz)  
S11 (On) vs FREQUENCY  
S22 (Off) vs FREQUENCY  
0
-2  
0
-5  
-4  
-6  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-8  
-10  
-12  
-14  
-16  
-18  
0
0.2  
0.4  
0.6  
0.8  
1
0
0.2  
0.4  
0.6  
0.8  
1
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Specifications Subject to Change Without Notice.  
M/A-COM, Inc.  
3
North America: Tel. (800) 366-2266  
Fax (800) 618-8883  
Asia/Pacific: Tel. +81 3 3263 8761  
Fax +81 3 3263 8769  
Europe: Tel. +44 (1344) 869 595  
Fax +44 (1344) 300 020  

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