SW-276PIN [TE]
High Power GaAs SPDT Switch DC - 3 GHz; 高功率砷化镓SPDT开关DC - 3 GHz的
| 型号： | SW-276PIN |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | High Power GaAs SPDT Switch DC - 3 GHz |
| 文件： | 总3页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Power GaAs SPDT Switch
DC - 3 GHz
SW-106, SW-276
V 2.00
SW-106 (CR-5)
Features
● +39 dBm Typ. 1 dB Compression Point,
-8V Control
● +65 dBm Typ. 3rd Order Intercept, -8V Control
● Insertion Loss of 0.4 dB Typical
● Low Power Consumption
● Fast Switching Speed
Guaranteed Specifications1
(–55°C to +85°C)
SW-106 SW-276
Frequency Range
DC - 3.0 GHz
Insertion Loss
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
0.5 dB 0.4 dB Max
0.6 dB 0.5 dB Max
0.8 dB 0.7 dB Max
1.2 dB 1.0 dB Max
Isolation
VSWR
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
34 dB
32 dB
20 dB
15 dB
37 dB Min
31 dB Min
24 dB Min
19 dB Min
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
1.3:1
1.5:1
1.5:1
1.6:1
1.3:1 Max
1.5:1 Max
1.5:1 Max
1.6:1 Max
Operating Characteristics2
Impedance
50 Ohms Nominal
Switching Characteristics
Trise, Tfall (10% to 90% )
Ton, Toff (50% CTL to 90%/10% RF)
Transients (In-Band)
30 ns Typ
35 ns Typ
12 mV Typ
Input Power for Compression
0.1 dB
1.0 dB
0.9 GHz
0.9 GHz
(-5VControl)
(-8V Control)
+32.5 dBm +35.5 dBm
+35.5 dBm +39.5 dBm
Typ
Typ
SW-276 (CR-2)
Third Order Intercept Point (with two +10 dBm Input Tones)
0.9 GHz
0.9 GHz
(-5V Control)
(-8V Control)
+61 dBm Typ
+65 dBm Typ
Control Voltages
Vin Low
0 to -0.2V @ 20 µA Max
Vin High
-5V @ 50 µA Typ to -10V @ 800 µA Max
1. All specifications apply when operated with bias voltages of 0V for Vin Low
and -5 to -10V for Vin High, and 50 ohm impedance at all RFports, unless
otherwise specified.
2. High power (greater than 1W) handling specifications apply to cold switching
only. For input powers under 1W hot switching can be used.
3. Contact the factory for standard or custom screening requirements.
Ordering Information
Part Number
Package
SW-106 PIN
SW-276 PIN
Surface Mount
Ceramic
For both switches: Bottom of Case is AC Ground
Dimension in ( ) are in mm.
Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)
.xx = ± 0.02 (.x = ± 0.5)
V 2.00
Two Tone IP Measurements
Absolute Maximum Ratings
3
Absolute Maximum1
Input Power
for each tone Intermodulation
3rd Order
Second
Harmonic
(dBc)
Parameter
Bias
Voltage
IP
(dBm)
3
Max. Input Power
0.05 GHz
(dBm)
Products (dBc)
+35 dBm
0, –5V
0, –6V
0, –7V
0, –8V
+27
+27
+27
+27
–34
–49
–64
–65
+44
+51
+59
+59
-61
-61
-63
-63
0.5 - 2.0 GHz
–5V Control
–8V Control
–10V Control
+36 dBm
+39 dBm
+40 dBm
0, –5V
0, –6V
0, –7V
0, –8V
+28
+28
+28
+28
–30
–41
–52
–60
+43
+48
+54
+58
-58
-58
-57
-57
Power Dissipation 2,3
2.0 W
–12V, +1V
Control Voltage
Operating Temperature
Storage Temperature
Maximum Junction Temperature
–55˚C to +125˚C
–65˚C to +150˚C
+175˚C
0, –5V
0, –6V
0, –7V
0, –8V
+29
+29
+29
+29
–28
–34
–44
–52
+43
+46
+51
+55
-54
-54
-54
-54
Thermal Resistance2: q
+50˚C/W
jc
1. Operation of this device above any one of these parameters may cause
permanent damage.
0, –5V
0, –6V
0, –7V
0, –8V
+30
+30
+30
+30
–26
–32
–38
–44
+43
+46
+49
+52
-52
-51
-51
-51
2. T
= 25˚C, where T
is the temperature at the bottom
case
case
of the case.
3. Special consideration must be given to the mounting of the switch to
minimize the thermal resistance. The bottom of the case should be
thermally attached to the mounting surface to maintain the junction
temperature under the absolute maximum rating.
Truth Table
Functional Schematics (Top View)
Control
Condition of Switch
RF Common to Each RF Port
SW-106
A
B
RF1
On
RF2
Off
High Low
Low High
Off
On
Typical Performance
SW-276
V 2.00
Typical Performances (cont'd.)
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