SW-277TR [TE]
High Power GaAs SPDT Switch DC - 2.5 GHz; 高功率砷化镓SPDT开关DC - 2.5 GHz的型号: | SW-277TR |
厂家: | TE CONNECTIVITY |
描述: | High Power GaAs SPDT Switch DC - 2.5 GHz |
文件: | 总2页 (文件大小:33K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
High Power GaAs SPDT Switch
DC - 2.5 GHz
SW-277
V3.00
Features
SO-8
PIN 8
Positive Supply and Control Voltages
•
.2284-.2440
.1497-.1574
(3.80-4.00)
- B -
(5.80-6.20)
+36 dBm Typ. 1 dB Compression Point, 8V Supply
•
.010(0.25) M B M
Orientation
mark
+65 dBm Typ. 3rd Order Intercept Point, 8V Supply
•
Low Insertion Loss: 0.4 dB Typical
•
PIN 1
.0099-0.0196
x 45° Chamfer
(0.25-0.50)
.1890-.1968
(4.80-5.00)
- A -
Low Power Consumption: 100 µW
•
.0532-.0688
(1.35-1.75)
Fast Switching Speed
•
0°-8°
- C -
1
Tape and Reel Packaging Available
•
.004 (0.10)
.016-.050
.0040-.0098
(0.10-0.25)
(0.40-1.27)
Description
.0075-0.0098
(0.19-0.25)
.013-.020 TYP.
(0.33-0.51)
.050(1.27) BSC.
M/A-COM’s SW-277 is a GaAs MMIC SPDT switch in a low cost
SOIC 8-lead surface mount plastic package. The SW-277 is ideally
suited for use where very low power consumption is required.
Typical applications include transmit/receive switching,
switch matrices, and filter banks in systems such as: radio and
cellular equipment, PCM, GPS, fiber optic modules, and other
battery powered radio equipment.
.010(0.25) M C A M B S
8- Lead SOP outline dimensions
Narrow body .150
(All dimensions per JEDEC No. MS-012-AA, Issue C)
Dimensions in ( ) are in mm.
Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)
.xx = ± 0.02 (.x = ±0.5)
Ordering Information
The SW-277 is fabricated with a monolithic GaAs MMIC using a
mature 1-micron process. The process features full chip
passivation for increased performance and reliability.
Model Number
SW-277 PIN
Package
SOIC 8-Lead Plastic Package
Forward Tape and Reel
Reverse Tape and Reel
SW-277TR
SW-277RTR
Electrical Specifications, T = +25°C
A
Parameter
Test Conditions2
Unit
Min.
Typ.
Max
Insertion Loss
DC – 2.0 GHz
DC – 1.0 GHz
DC – 0.5 GHz
DC – 0.1 GHz
dB
dB
dB
dB
0.6
0.4
0.35
0.2
0.8
0.6
0.5
0.4
Isolation
VSWR
DC – 2.0 GHz
DC – 1.0 GHz
DC – 0.5 GHz
DC – 0.1 GHz
dB
dB
dB
dB
14
28
35
35
16
32
38
38
DC – 2.0 GHz
1.2:1
Trise, Tfall
Ton, Toff
Transients
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, 50% Control to 10% RF
In Band
nS
nS
mV
30
35
12
One dB
Compression Point
Input Power (5V Supply/Control)
Input Power (8V Supply/Control)
0.9 GHz
0.9 GHz
dBm
dBm
33
35.8
3rd Order
Intercept
Measured Relative (5V Supply/Control)
to Input Power (8V Supply/Control)
0.9 GHz
0.9 GHz
dBm
dBm
61
65
(for two-tone input power up to +10 dBm)
1. Refer to “Tape and Reel Packaging” Section, or contact factory.
2. All specifications apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports,
unless otherwise specified. High power (greater than 1W) handling specifications apply to cold switches only. For input powers under 1W, hot
switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the pack-
age from ground or any other voltage.
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
1
North America: Tel. (800) 366-2266
Fax (800) 618-8883
■
Asia/Pacific: Tel. +81 3 3263 8761
Fax +81 3 3263 8769
■
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
High Power GaAs SPDT Switch
Absolute Maximum Ratings
SW-277
V3.00
Two Tone IP3 Measurements
Supply &
Control
Voltage
Input
Power
(dBm)
3rd Order
Second
Harmonic
(dBc)
Intermodulation
IP
3
Parameter
Absolute Maximum
Products (dBc) (dBm)
Max. Input Power
0.5 – 2.0 GHz
0,5V
0,6V
0,7V
0,8V
0,10V
0,5V
0,6V
0,7V
0,8V
0,10V
0,5V
0,6V
0,7V
0,8V
0,10V
0,5V
0,6V
0,7V
0,8V
0,10V
+27
+27
+27
+27
+27
+28
+28
+28
+28
+28
+29
+29
+29
+29
+29
+30
+30
+30
+30
+30
-32
-45
-58
-72
-72
-30
-40
-53
-64
-72
-28
-37
-49
-50
-50
-36
-46
-50
-50
-50
+43
+49.5
+56
-74
-77
-79
-79
-81
-69
-76
-78
-79
-80
-59
-74
-75
-75
-75
-67
-73
-75
-75
-75
5V Control and Supply
8V Control and Supply
10V Control and Supply
+37 dBm
+40 dBm
+42 dBm
1.0 W
+63
+63
Power Dissipation
Supply Voltage
Control Voltage
Operating Temperature
Storage Temperature
+43
-1V, +12V
+48
-1V, Vsupply + 0.2V
-40°C to +85°C
-65°C to +150°C
+54.5
+60
+64
Thermal Resistance2: θ = 87 °C/W
+43
jc
+47.5
+53.5
+54
1. Operation of this device above any one of these parameters may cause
permanent damage.
2. Thermal resistance is given for T = 25°C. T
is the temperature of
A
CASE
leads 1 and 4.
+54
+43
Pin Configuration
Functional Schematic
+48
RF2
B
A
RF1
Pin No.
Description
+53
8
7
6
5
1
GND, Thermal Contact
+55
2
+V Supply
+55
31
RF Common
4
GND, Thermal Contact
Truth Table
51
6
RF1
A
Control Inputs
Condition of Switch
RF Common to Each RF Port
7
81
B
A
1
0
B
0
1
RF1
Off
RF2
On
RF2
1
2
3
4
On
Off
1. External DC blocking capacitors required
on all RF ports.
GND +V RFC GND
Thermal
Contact
Thermal
Contact
"0" – 0 to +0.2V @ 20 µA max.
"1" – +5V @ 20 µA Typ to 10V @ 500 µA max.
Typical Performance
ISOLATION VS FREQUENCY
INSERTION LOSS VS FREQUENCY
80
70
2.0
1.5
60
50
40
30
20
10
0
1.0
+25°C
+85°C
0.5
-40°C
0
1.5
FREQUENCY (GHz)
1.0
2.0
2.5
0
0.5
1.5
FREQUENCY (GHz)
1.0
2.0
2.5
0
0.5
COMPRESSION VS CONTROL VOLTAGE (900MHz)
VSWR VS FREQUENCY
2.0
1.8
40
35
30
1.0 dB Compression
1.6
1.4
0.1 dB Compression
25
20
1.2
1.0
15
10
1.5
1.0
2.0
0
0.5
3.0
6.0
7.0
9.0
4.0
5.0
8.0
10.0
FREQUENCY (GHz)
CONTROL VOLTAGE (Volts)
Specifications Subject to Change Without Notice.
2
M/A-COM, Inc.
North America: Tel. (800) 366-2266
Fax (800) 618-8883
■
Asia/Pacific: Tel. +81 3 3263 8761
Fax +81 3 3263 8769
■
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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