SW-437TR [TE]

GaAs SPDT Switch DC - 3.0 GHz; 砷化镓SPDT开关DC - 3.0 GHz的
SW-437TR
型号: SW-437TR
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

GaAs SPDT Switch DC - 3.0 GHz
砷化镓SPDT开关DC - 3.0 GHz的

开关 射频 微波 光电二极管
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SW-437  
GaAs SPDT Switch  
DC - 3.0 GHz  
SOT-363 Plastic Package1  
Features  
.0787  
Low Cost Plastic SOT-363 Package  
.0059 (0.15)  
C
.0098  
.0031  
0,25  
.0142 ± .0039  
0,30 ± 0,1  
2
2X  
PIN 6  
Low Insertion Loss <0.3dB @ 900 MHz  
Low Power Consumption <15µA @ +2.7V  
Positive or Negative 2.5 to 8 V Control  
0,08  
.0512  
1,3  
.0256  
0,65  
.0165  
0,42  
REF  
.0827  
2,1  
-D-  
.0492  
1,25  
Description  
10°  
4°  
10°  
4°  
##X  
M/A-COM’s SW-437 is a GaAs monolithic switch in a low cost  
SOT-363 surface mount plastic package. The SW-437 is ideally  
suited for applications where very low power consumption, low  
insertion loss, very small size and low cost are required. Typical  
application is in dual band systems where switching between  
small signal components is required such as filter banks, single  
band LNA's, converters etc. The SW-437 can be used in applica-  
tions up to 0.25 Watts in systems such as cellular, PCS,  
DCS1800, GSM, CDMA, W-CDMA and other analog/digital  
wireless communications systems.  
8°  
0°  
.0059 (0.15)  
C
.0079 (0.20)  
C
2X  
2X  
.0118  
.0059  
0,30  
PIN 1  
-A-  
0,15  
.0433  
1,10  
.0039 (0.10)  
B −  
M
C
D
AB  
MAX  
+.0038  
-.0079  
+0,10  
-0,20  
.0354  
0,90  
.0039 (0.10)  
C
2X  
-C-  
.0039  
.0000  
0,10  
0,00  
1. All dimensions are JEDEC MO-203-AB Issue A and are shown  
as in/mm.  
The SW-437 is fabricated using a mature 0.8 micron GaAs  
MESFET process. The process features full passivation for  
increased performance and reliability.  
Ordering Information  
Part Number  
Package  
SOT-363 Plastic Package  
Forward Tape and Reel 1  
Reverse Tape and Reel1  
Sample Board  
SW-437 PIN  
SW-437TR  
SW-437RTR  
SW-437SMB  
1. Reference Application Note M513 for reel size information.  
Electrical Specifications TA = 25°C  
Parameter  
Insertion Loss  
Test Conditions  
Units  
dB  
dB  
dB  
dB  
Min.  
Typ.  
0.3  
0.4  
0.55  
21  
15  
12  
1.2:1  
24  
Max.  
0.4  
0.5  
DC - 1 GHz  
1- 2 GHz  
2 - 3 GHz  
DC - 1 GHz  
1 - 2 GHz  
2 - 3 GHz  
DC - 3 GHz  
0.7  
Isolation  
19  
13  
10  
dB  
dB  
VSWR  
P1dB (2.7V supply)  
1.3:1  
500 MHz - 3 GHz  
dBm  
dBm  
P1dB (5V supply)  
500 MHz - 3 GHz  
27  
Input IP2  
Input IP3  
Trise, Tfall  
Ton, Toff  
2-Tone 900 MHz, 5 MHz spacing (2.7 V)  
2-Tone 900 MHz, 5 MHz spacing (2.7 V)  
10% to 90% RF, 90% to 10% RF  
50% Control to 90% RF, Control to 10% RF  
In-Band  
dBm  
dBm  
ns  
ns  
mV  
81  
55  
10  
20  
10  
Transients  
VCTL = 2.5 V  
µA  
4
15  
Gate Leakage  
V2.00  
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298  
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
www.macom.com  
AMP and Connecting at a Higher Level are trademarks.  
Specifications subject to change without notice.  
GaAs SPD Switch, DC - 3.0 GHz  
SW-437  
Absolute Maximum Ratings1  
Functional Schematic  
Positive Control Voltage  
Parameter  
Max. Input Power (0.5 - 3.0 GHz)  
3 V Control  
Absolute Maximum  
PIN 1  
+30 dBm  
+33 dBm  
5 V Control  
Operating Voltage  
RF1  
V1  
+8.5 Volts  
39pF  
Operating Temperature  
Storage Temperature  
-40°C to +85°C  
-65°C to +150°C  
GND  
RFC  
39pF  
1. Exceeding any one or combination of these limits may cause  
permanent damage.  
RF2  
V2  
39pF  
Truth Table  
Functional Schematic  
Mode  
(Control)  
Positive1  
V1  
V2  
RFC - RF1 RFC - RF2  
Negative Control Voltage  
PIN 1  
0±0.2V  
+2.5 to +8V  
0±0.2V  
+2.5 to +8V  
0±0.2V  
On  
Off  
Off  
On  
Off  
On  
On  
Off  
RF1  
V1  
Negative2  
-2.5V to -8V  
0±0.2V  
-2.5V to -8V  
1. External DC blocking capacitors are required on all RF ports.  
39pF capacitors used for positive control voltage.  
2. If negative control is used, DC blocking capacitors are not required  
on RF Ports.  
GND  
RF2  
RFC  
V2  
PIN Configuration  
PIN No.  
Function  
Description  
RF in/out  
Handling Procedures  
The following precautions should be observed to avoid damage:  
1
2
3
4
5
6
RF1  
GND  
RF2  
RF Ground  
RF in/out  
Static Sensitivity  
Gallium Arsenide Integrated Circuits are ESD sensitive and can  
be damaged by static electricity. Proper ESD techniques should  
be used when handling these devices.  
V2  
V Control 2  
RF COMMON  
V Control 1  
RFC  
V1  
V2.00  
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298  
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
www.macom.com  
AMP and Connecting at a Higher Level are trademarks.  
Specifications subject to change without notice.  
GaAs SPD Switch, DC - 3.0 GHz  
SW-437  
Typical Performance Curves  
Isolation vs. Frequency over Temperature  
VSWR vs. Frequency  
40  
1.5  
1.45  
1.4  
35  
30  
25  
20  
15  
10  
POSITIVE CONTROL  
1.35  
1.3  
1.25  
1.2  
NEGATIVE CONTROL  
1.15  
1.1  
1.05  
1
0
0.5  
1
1.5  
2
2.5  
3
0
0.5  
1
1.5  
2
2.5  
3
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Insertion Loss vs. Frequency over  
Temperature (Negative Control)  
Insertion Loss vs. Frequency over  
Temperature (Postive Control)  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
+85°C  
25°C  
25°C  
+85°C  
-40°C  
-40°C  
0
0.5  
1
1.5  
2
2.5  
3
0
0.5  
1
1.5  
FREQUENCY (GHz)  
2
2.5  
3
FREQUENCY (GHz)  
V2.00  
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+81 44 844 8296, Fax +81 44 844 8298  
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
www.macom.com  
AMP and Connecting at a Higher Level are trademarks.  
Specifications subject to change without notice.  

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