TVB200SC-L [TE]
SiBar Thyristor Surge Protectors; SiBar晶闸管浪涌保护器
| 型号： | TVB200SC-L |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SiBar Thyristor Surge Protectors |
| 文件： | 总12页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiBar Thyristor
SiBar Thyristor Surge Protectors
Raychem Circuit Protection’s
SiBar thyristor surge protection
devices are designed to help pro-
tect sensitive telecommunication
equipment from the hazards
caused by lightning, power con-
tact, and power induction. These
devices have a high electrical
surge capability to help protect
against transient faults and a high
off-state impedance, rendering
them virtually transparent during
normal system operation.
SiBar thyristor surge protectors
are designed to assist telecom-
munication and computer tele-
phony equipment in meeting the
applicable requirements and
industry specifications.
4
Benefits:
Features:
• Bidirectional transient voltage
protection
• High off-state impedance
• Low on-state voltage
• High surge capability
• Short-circuit failure mode
• Surface-mount technology
• Lead-free leads available on
all parts
Applications:
• Modems
• Fax machines
• PBX systems
• Phones
• Helps provide protection for
sensitive telecom electronic
equipment
• Low leakage current
• Low power dissipation
• Fast, reliable operation
• No wear-out mechanisms
• Helps designers meet world-
wide telecom standards
• Helps reduce warranty and
service costs
• POS systems
• Analog and digital linecards
• Other customer premise and
network equipment requiring
protection
• Easy installation
• Helps improve power efficiency
of equipment
Devices in this section are grouped by:
Surge Capability, Maximum Off-State Voltage, Package Size
Raychem Circuit Protection
SiBar Thyristor Surge Protectors 339
Selection Guide for SiBar Thyristor Surge Protectors
Step 1. Determine the circuit’s operating parameters.
Fill in the following information about the circuit:
Maximum ambient operating temperature ______________________
Maximum DC supply voltage (VDC Max..) ________________________
Maximum ringing (AC) voltage (VAC Max.) ______________________
System voltage damage threshold
__________________________
Maximum fault current and duration __________________________
Maximum system operating current __________________________
Applicable industry requirements
__________________________
Step 2. Calculate the maximum operating voltage of your system.
Maximum operating voltage = VDC Max. + (1.414 x VAC Max.)
4
Refer to Table V1 to select a SiBar thyristor device with a maximum off-
state voltage (VDM) rating that is close to, but greater than, the maxi-
mum operating voltage of your system.
Step 3. Verify that the system voltage damage threshold is
greater than the rated maximum breakover voltage (VBO).
Refer to Table V1 to confirm that the maximum breakover voltage of the
device you selected in Step 2 is less than the system voltage damage
threshold.
340 SiBar Thyristor Surge Protectors
Raychem Circuit Protection
SiBar Thyristor
Selection Guide for SiBar Thyristor Surge Protectors continued
Step 4. Verify that the maximum fault current of the system and
its duration or the fault current defined in the industry
specification(s) are less than the surge current rating of
the device selected. For help in determining which indus-
try specifications may apply, refer to the Protection
Application Guide on the next page.
Refer to Table V2 for SiBar thyristor surge current ratings applicable to
TIA 968-A (FCC Part 68), Telcordia GR-1089, ITU K.20, K.21, K.45
industry specifications.
Step 5. Verify that the maximum system operating current is less
than the minimum hold current rating (I ) in Table V1 for
H
the device selected.
Using Figure V4, verify that IH is greater than the maximum system
operating current over the entire ambient operating temperature range.
(As with IH, VDM and VBO also vary with ambient temperature, to a lesser
degree. Figures V2 and V3 can be used to determine that the device
selected continues to meet your requirements over the ambient operat-
ing temperature range.)
4
Step 6. Verify that the dimensions in Table V4 for the SiBar
thyristor device are compatible witht the application’s
space requirements.
Raychem Circuit Protection
SiBar Thyristor Surge Protectors 341
Protection Application Guide for SiBar Thyristor Surge Protectors
To use this guide, follow the steps 2. Select the type of protection
below:
depending on the agency and
regional specifications in the
second column.
1. Select your equipment type
from the guide below.
PolySwitch Resettable Devices
Key Device Selection Citeria
Region/
Specification
SiBar Thyristor
Application
Surge Protectors1
Small Footprint
Low Resistance
Fast Time-to-Trip
Customer premises equipment,
IT equipment
North America
TVBxxxSA(-L) or
TR600-150
TR600-150-RA
TS600-200-RA
TR600-150-RB
TS600-170
TIA-968-A (FCC Part 68), TVAxxxSA(-L) with TS600-170
UL 1950,
TR/TS; TVBxxxSC
(-L)
Analog modems, V.90 modems,
ISDN modems, xDSL modems,
ADSL splitters, phone sets, fax machines, Europe/Asia/
answering machines, caller ID, internet
appliances, PBX systems, POS terminals,
wall plugs
UL 1459
with TS/TR or fuse
TVBxxxSA(-L)
TR250-120
TR250-145
TS250-130
TSV250-130
TR250-180U
TS250-130-RA
TSV250-130
TR250-120T-R2
TS250-130-RB
South America
ITU K.21
TVAxxxSA(-L)
Access network equipment (*)
Remote terminals, line repeaters,
multiplexers, cross-connects,
WAN equipment
North America
TVBxxxSC(-L)
TR600-150-RA
TS600-200-RA
TR600-160-RA
TS600-200-RA
TR600-150-RB
TS600-170
Telcordia GR-1089
Europe/Asia/
South America
ITU K.45
TVBxxxSA(-L)
TVAxxxSA(-L)
TR250-120
TR250-145
TS250-130
TSV250-130
TR250-180U
TS250-130-RA
TSV250-130
TR250-120T-R2
TS250-130-RB
Central office switching equipment (*)
Analog/POTS linecards, ISDN linecards,
xDSL modems, ADSL/VDSL splitters,
T1/E1 linecards, multiplexers,
North America
TVBxxxSC(-L)
TR600-150-RA
TS600-200-RA
TR600-160-RA
TS600-200-RA
TR600-150-RB
TS600-170
Telcordia GR-1089
4
Europe/Asia/
South America
ITU K.20
TVBxxxSA(-L)
TVAxxxSA(-L)
TR250-120
TR250-145
TS250-130
TSV250-130
TR250-180U
TS250-130-RA
TSV250-130
TR250-120T-R2
TS250-130-RB
CSU/DSU, servers
Primary protection modules (*)
MDF modules, Network Interface
Devices (NID)
North America
N/A
N/A
TR250-180U
TR250-180U
TR250-180U
Telcordia GR-974
Europe/Asia/
South America
ITU K.20
TGC250-120T
TR250-120T
TS250-130
TC250-145T
TGC250-120T
TR250-120T-R2
TS250-130-RB
TR250-145-RA
TS250-130-RA
TSV250-130
TSV250-130
Short-haul/intrabuilding communications North America
TVBxxxSA(-L)
TVAxxxSA(-L)
TSL250-080
TR250-120
TS250-130
TSV250-130
TR250-120
TR250-145
TS250-130
TSV250-130
TR250-145
TR250-180U
TS250-130-RA
TSV250-130
TR250-120T-R2
TSL250-080
equipment (*)
Telcordia GR-1089
intrabuilding
LAN equipment, VoIP cards, cable
telephony NIU’s, wireless local loop
handsets
Europe/Asia/
South America
ITU K.21
TVBxxxSA(-L)
TVAxxxSA(-L)
TR250-180U
TS250-130-RA
TSV250-130
TR250-120T-R2
TS250-130-RB
LAN intrabuilding power cross protection
LAN equipment, VoIP cards, IP phones
TVBxxxSA(-L)
TVAxxxSA(-L)
TSL250-080
TSL250-080
TSL250-080
TVAxxxSA
IEEE 802.3 Power over LAN protection
Powered ethernet switches and terminals,
IP phones, wireless LAN base stations,
microcellular base stations, VoIP cards
N/A
miniSMDC014
SMD030
SMD030-2018
SMD030-2018
Cable telephony powering systems
Power passing taps
N/A
BBR550
BBR750
BBR550
Notes: This list is not exhaustive. Raychem Circuit Protection welcomes our customers’ input for additional application ideas.
1For more information on Raychem Circuit Protection PolySwitch resettable devices, refer to telecommunication and networking devices on page 301.
*For improved line balance in these applications, resistance-matched parts are recommended. See Telecom and Networking section, page 301 for details.
(-L) Lead-free leaded devices are also applicable for these applications.
342 SiBar Thyristor Surge Protectors
Raychem Circuit Protection
SiBar Thyristor
Table V1. Product Electrical Characteristics for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices)
Part Number
TVA270SA
TVA270SA-L
VDM Max. (V)
270
270
VBO Max. (V)
365
365
IH Min. (mA)
150
150
VT Max. (V)
3.0
3.0
C1 Typ. (pF)
22
22
NEW
TVB058SA-L
TVB170SA
TVB170SA-L
TVB200SA
TVB200SA-L
TVB270SA
TVB270SA-L
TVB300SA-L
58
78
150
150
150
150
150
150
150
150
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
43
20
20
20
20
20
20
20
170
170
200
200
270
270
300
265
265
320
320
365
365
400
NEW
NEW
NEW
NEW
TVB200SB-L
TVB270SB-L
TVB300SB-L
200
270
300
320
365
400
150
150
150
4.0
4.0
4.0
25
25
25
TVB170SC
TVB170SC-L
TVB200SC
TVB200SC-L
TVB270SC
TVB270SC-L
170
170
200
200
270
270
300
265
265
320
320
365
365
400
150
150
150
150
150
150
150
4.0
4.0
4.0
4.0
4.0
4.0
4.0
50
50
50
50
50
50
50
NEW
TVB300SC-L
Notes: All electrical characteristics are measured at 25°C.
VDM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 µA.
VBO Measured at 100V/µs.
4
C1 measured at 1 MHz with a 50 V bias.
DC
Table V2. Surge Current Rating for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices)
TIA-968-A (FCC Part 68)*
Ipp(A) Ipp(A)
5 x 320 µs 10 x 560 µs 10 x 160 µs 10 x 1000 µs 2 x 10 µs
Telcordia GR-1089*
Ipp(A) Ipp(A)
IEC 61000-4-5*ITU K.20/21/45* ITSM
Part
Ipp(A)
Ipp(A)
8 x 20 µs
150
Ipp(A)
5 x 310 µs
90
Min.
(A)
22
di/dt
(A/µs)
500
dV/dt
(V/µs)
2000
2000
Description
TVA270SA
TVA270SA-L
90
90
70
70
100
100
50
50
150
150
150
90
22
500
NEW
TVB058SA-L
TVB170SA
TVB170SA-L
TVB200SA
TVB200SA-L
TVB270SA
TVB270SA-L
TVB300SA-L
55
90
90
90
90
90
90
90
55
70
70
70
70
70
70
70
70
50
50
50
50
50
50
50
50
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
55
90
90
90
90
90
90
90
22
22
22
22
22
22
22
22
500
500
500
500
500
500
500
500
2000
2000
2000
2000
2000
2000
2000
2000
100
100
100
100
100
100
100
NEW
NEW
NEW
NEW
TVB200SB-L
TVB270SB-L
TVB300SB-L
100
100
100
100
100
100
150
150
150
80
80
80
250
250
250
250
250
250
100
100
100
30
30
30
500
500
500
2000
2000
2000
TVB170SC
TVB170SC-L
TVB200SC
TVB200SC-L
TVB270SC
TVB270SC-L
TVB300SC-L
100
100
100
100
100
100
100
150
150
150
150
150
150
150
200
200
200
200
200
200
200
100
100
100
100
100
100
100
500
500
500
500
500
500
500
400
400
400
400
400
400
400
150
150
150
150
150
150
150
60
60
60
60
60
60
60
500
500
500
500
500
500
500
2000
2000
2000
2000
2000
2000
2000
NEW
Notes: *Lightning current wave forms for applicable industry specification.
ITSM, peak on-state surge current is measured at 60 Hz, one cycle.
di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax=600V; C=30 µF).
dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, VD = rated VBO, Tj = 25°C).
Raychem Circuit Protection
SiBar Thyristor Surge Protectors 343
Figure V1. Voltage-Current Characteristics
I
IPP
IT
IH
IBO
IDM
V
VT
VDM VBO
Note: The voltage current (V-I) is useful in depicting the electrical characteristics of the SiBar thyristor surge protectors in relation to each other.
Table V3. Parameter Definitions for SiBar Thyristor Surge Protectors
Symbol
Parameter
Definition
4
VBO
Breakover voltage
Maximum voltage across the device at breakdown measured under a
specified voltage and current rate of rise.
IBO
IH
Breakover current
Hold current
Instantaneous current flowing at the breakover voltage (VBO).
Minimum current required to maintain the device in the on-state.
Current through the device in the on-state condition.
IT
On-state current
On-state voltage
VT
VDM
Voltage across the device in the on-state condition at a specified current (IT).
Maximum off-state
voltage
Maximum DC voltage that can be applied to the device while maintaining
it in the off-state condition.
IDM
Off-state current
Maximum DC value of current that results from the application of the maximum
off-state voltage.
Ipp
Peak pulse current
Rated peak pulse current of specified amplitude and waveshape
that may be applied without damage.
di/dt, dv/dt
Critical rate of rise of
on-state current and voltage
Maximum current and voltage rate of rise the device can withstand without damage.
344 SiBar Thyristor Surge Protectors
Raychem Circuit Protection
SiBar Thyristor
Figures V2–V5. Typical Electrical Characteristics vs. Temperature
Figure V3. Breakover Voltage vs. Temperature
Figure V2. Off-state Voltage vs. Temperature
120%
115%
110%
115%
110%
105%
105%
100%
95%
100%
95%
90%
90%
85%
-25
0
25
75
100
150
-50
50
125
-25
0
25
75
100
-50
50
125
150
Temperature (°C)
Temperature (°C)
Figure V4. Hold Current vs. Temperature
Figure V5. Off-state Current vs. Temperature
4
Hold current vs. temperature
200%
180%
160%
140%
120%
100%
80%
100
10
1
0.1
60%
40%
20%
0.01
0.001
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Raychem Circuit Protection
SiBar Thyristor Surge Protectors 345
Physical Description for Dimensions for SiBar Thyristor Surge Protectors
Figure V6. Physical Description for Dimensions
S
A
D
B
C
K
P
J
H
Table V4. Product Dimensions for SiBar Thyristor Surge Protectors in Millimeters (Inches)
Dimension
A
B
C
D*
H
J
K
P
Ref.
S
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Min. Max.
TVBxxxSA(-L),
TVBxxxSB-L,
TVBxxxSC(-L)
4.06 4.57
3.30 3.81
1.90 2.41
1.96 2.11
0.051 0.152 0.15 0.30
0.76 1.27
0.51
5.21 5.59
(0.160) (0.180) (0.130) (0.150) (0.075)(0.095) (0.077)(0.083) (0.002)(0.006) (0.006)(0.012) (0.030) (0.050) (0.020) (0.205) (0.220)
TVA270SA(-L)
4.06 4.57
2.29 2.92
1.91 2.41
1.27 1.63
0.010 0.152 0.15 0.41
0.76 1.52
—
—
4.83 5.59
(0.190) (0.220)
(0.160) (0.180) (0.090) (0.115) (0.075)(0.095) (0.050)(0.064) (0.004)(0.006) (0.006)(0.016) (0.030) (0.060)
Notes: *D dimension is measured within dimension P.
TVA series devices use industry standard SMA package type.
TVB series devices use industry standard SMB package type.
All devices are bidirectional and may be oriented in either direction for installation.
4
346 SiBar Thyristor Surge Protectors
Raychem Circuit Protection
SiBar Thyristor
Table V5. Physical Characteristics and Environmental Specifications for SiBar Thyristor Surge Protectors
Lead material
Tin/lead finish or matte tin finish(-L devices)
Encapsulating material
Solderability
Epoxy, meets UL94V-0 requirements
per MIL-STD-750, Method 2026
per MIL-STD-750, Method 2031
per MIL-STD-750, Method 1022
per MIL-STD-750, Method 2016
per MIL-STD-750, Method 2056
–55 to 150
Solder heat withstand
Solvent resistance
Mechanical shock
Vibration
Storage temperature (°C)
Operating temperature (°C)
Junction temperature (°C)
Maximum lead temperature for soldering pupose; 10 seconds (°C)
–40 to 125
150
+260
Table V6. Reliability Tests for SiBar Thyristor Surge Protectors
Test
Conditions
Duration
High temperature, reverse bias
High humidity, high temperature, reverse bias
High temperature storage life
Temperature cycling
+100˚C, 50 VDC bias
85% RH, +85˚C, 50 VDC bias
+150˚C
1000 hours
1000 hours
1000 hours
1000 cycles
96 hours
-65˚C to +150˚C, 15 minute dwell
100% RH, +121˚C, 15 PSI
Autoclave
Table V7. Packaging and Marking Information for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices)
Recommended Pad Layout (mil/inch)
Part
Description
Tape and Reel
Quantity
Standard
Package
Part
Marking
Dimension
A (Nom.)
Dimension
B (Nom.)
Dimension
C (Nom.)
Agency
Recognition
4
TVA270SA
5,000
5,000
20,000
20,000
270A
REAB
2.0 (0.079)
2.0 (0.079)
2.0 (0.079)
2.0 (0.079)
2.0 (0.079)
2.0 (0.079)
UL
UL
TVA270SA-L
NEW
TVB058SA-L
TVB170SA
2,500
2,500
2,500
2,500
2,500
2,500
2,500
2,500
10,000
10,000
10,000
10,000
10,000
10,000
10,000
10,000
058A
RCBB
170A
RDBB
200A
REBB
270A
300A
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
UL
UL
UL
UL
UL
UL
UL
UL
TVB170SA-L
TVB200SA
TVB200SA-L
TVB270SA
TVB270SA-L
TVB300SA-L
NEW
NEW
NEW
NEW
TVB200SB-L
TVB270SB-L
TVB300SB-L
2,500
2,500
2,500
10,000
10,000
10,000
200B
270B
300B
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
UL
UL
UL
TVB170SC
2,500
2,500
2,500
2,500
2,500
2,500
2,500
10,000
10,000
10,000
10,000
10,000
10,000
10,000
RCBD
170C
RDBD
200C
REBD
270C
300C
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.261 (0.089)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.159 (0.085)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
2.743 (0.108)
UL
UL
UL
UL
UL
UL
UL
TVB170SC-L
TVB200SC
TVB200SC-L
TVB270SC
TVB270SC-L
TVB300SC-L
NEW
Raychem Circuit Protection
SiBar Thyristor Surge Protectors 347
Recommended Pad Layout for SiBar Thyristor Surge Protectors
Figure V7. Recommended Pad Layout
C
A
B
B
Agency Recognition for SiBar Thyristor Surge Protectors
UL
File # E179610
Part Numbering System for SiBar Thyristor Surge Protectors
TV 270 -L
B
S A
Lead-free leads (matte tin finish)
Surge current rating
A, B, C, refer to Table V2
4
V
DM (max. off-state voltage indicator)
Package type:
A: SMA package
B: SMB package
Product Family
Solder Reflow and Rework Recommendations for SiBar Thyristor Surge Protectors
SiBar thyristor devices are com-
Figure V8
patible with standard reflow and
wave soldering techniques.
Solder Reflow
Preheating
Soldering
Cooling
300
250
200
• Recommended reflow methods:
IR, vapor phase oven, hot air
oven.
• Always preheat the device to
prevent excessive thermal
shock and stress.
• Recommended maximum paste
thickness of 0.25mm (0.010 in.).
• Devices may be cleaned using
standard industry methods and
solvents.
150
100
50
0
Solder Rework
30–90
5
120
• Use standard industry practices
for the SiBar Thyristor Surge
Protectors.
Time (s)
348 SiBar Thyristor Surge Protectors
Raychem Circuit Protection
SiBar Thyristor
Table V8. Tape and Reel Specifications for SiBar Thyristor Surge Protectors
SiBar thyristor devices are supplied on tape and reel per EIA481-1 standard. (See Figures V9 and V10 for
details.)
TVB Series
TVA Series
Description
Dimensions (mm)
Tolerance (mm)
+/- 0.30
+/- 0.10
+/- 0.10
+/- 0.10
—
Dimensions (mm)
Tolerance (mm)
+/- 0.3
+/- 0.10
+/- 0.10
+/- 0.10
+/- 0.10
+/- 0.10
—
W
12
4.0
12
4.0
P0
P1
8.0
8.0
P2
2.0
2.0
A0
4.3
2.9
B0
6.2
—
5.59
8.2
B1 max.
D0
8.2
—
1.5
+ 0.1, -0.0
+/- 0.05
+/- 0.10
—
1.5
+ 0.1, -0
+/- 0.05
+/- 0.10
—
F
5.5
5.5
E1
1.75
9.85
0.6
1.75
9.85
0.6
E2 min.
T max.
T1 max.
K0 max.
Leader min.
Trailer min.
—
—
0.1
—
0.1
—
2.59
390
160
+/- 0.10
—
2.36
390
160
+/- 0.10
—
—
—
4
Figure V9. EIA Referenced Taped Component Dimensions for SiBar Thyristor Surge Protectors
Embossment
P0
D0
P2
T
E1
Cover tape
A0
W
F
E2
B0
P1
B1
K0
T1
Center lines
of cavity
Raychem Circuit Protection
SiBar Thyristor Surge Protectors 349
Reel Dimension
A max.
Figure V10. EIA Referenced Reel Dimensions for SiBar Thyristor Protectors
330
N min.
50
W1
12.4 + 2.0, -0
18.4
W2 max.
W2 (measured at hub)
A
N (hub dia.)
W1 (measured at hub)
WARNING:
• Operation beyond the maximum ratings or improper use may result in device damage and possible electrical
arcing and flame.
• The devices are intended for protection against occasional overvoltage fault conditions and should not
be used when repeated fault conditions or prolonged trip events are anticipated.
• Device performance can be impacted negatively if devices are handled in a manner inconsistent with
recommended electronic, thermal, and mechanical procedures for electronic components.
4
350 SiBar Thyristor Surge Protectors
Raychem Circuit Protection
相关型号：
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