XP1043-QH-0G0T [TE]
32 dBm Saturated RF Power;
| 型号： | XP1043-QH-0G0T |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 32 dBm Saturated RF Power |
| 文件： | 总7页 (文件大小：851K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
XP1043-QH
Power Amplifier
12.0-16.0 GHz
Rev. V1
Features
Functional Schematic
nc GND GND VD1 VD2 VD3
32 dBm Saturated RF Power
41 dBm Output IP3 Linearity
17 dB Gain Control
On-Chip Power Detector
Lead-Free 4 mm 24-lead PQFN Package
100% RF Testing
1
2
3
4
5
6
18
17
16
15
14
13
GND
GND
nc
GND
GND
nc
RFIN
GND
GND
RFOUT
nc
RoHS* Compliant and 260°C Reflow Compatible
nc
Description
The XP1043-QH is a packaged linear power
amplifier that operates over the 12.0-16.0 GHz
frequency band. The device provides 21.5 dB gain
and 41 dBm Output Third Order Intercept Point
(OIP3) across the band and is offered in an industry
standard, fully molded 4x4mm QFN package. The
packaged amplifier is comprised of a three stage
power amplifier with an integrated, temperature
compensated on-chip power detector. The device
includes on-chip ESD protection structures and DC
by-pass capacitors to ease the implementation and
volume assembly of the packaged part. The device
is manufactured in GaAs pHEMT device technology
with BCB wafer coating to enhance ruggedness and
repeatability of performance. This device is specially
designed for use in Point-to-Point Radio systems for
cellular backhaul applications, and is well suited for
other telecom applications such as SATCOM and
VSAT.
VG1 VG2 VG3
nc Vdet Vref
Pin Configuration
Pin No.
Function
Pin No.
Function
1-2
3
Ground
13-14
15
Not Connected
RF Output
Not Connected
RF Input
4
16
Not Connected
Ground
5-6
7
Ground
17-18
19
Gate 1 Bias
Gate 2 Bias
Gate 3 Bias
Not Connected
Pwr Det
Drain 3 Bias
Drain 2 Bias
Drain 1 Bias
Ground
8
20
9
21
10
11
12
22-23
24
Not Connected
Pwr Det Ref
Absolute Maximum Ratings 1,2
Parameter
Absolute Max.
Ordering Information
Supply Voltage (Vd1,2,3)
Supply Current (Id1,2,3)
+8.0 V
1500 mA
-2.4 V
Part Number
XP1043-QH-0G00
XP1043-QH-0G0T
XP1043-QH-EV1
Package
bulk quantity
Gate Bias Voltage (Vg1,2,3)
Max Power Dissipation (Pdiss)
RF Input Power
tape and reel
5.5W
+19 dBm
-55 °C to +85 °C
-65 °C to +150 °C
165 °C
evaluation module
Operating Temperature (Ta)
Storage Temperature (Tstg)
Channel Temperature (Tch)
MSL Level (MSL)
MSL3
ESD Min.-Machine Model (MM)
ESD Min.-Human Body Model (HBM)
Class A
Class 1A
(1) Minimum specifications are set under nominal (typ.) bias conditions.
Bias can be adjusted higher to achieve greater linearity and power;
however, maximum total power dissipated is specified at 5.5 W
(2) Channel temperature directly affects a device’s MTTF. Channel
temperature should be kept as low as possible to maximize lifetime.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
XP1043-QH
Power Amplifier
12.0-16.0 GHz
Rev. V1
Electrical Specifications: 12.0-16.0 GHz (Ambient Temperature T = 25°C)
Parameter
Units
dB
Min.3
19.0
10.0
10.0
Typ.
21.5
15.0
10.0
55.0
Max.
Small Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Reverse Isolation (S12)
dB
dB
dB
P1dB
dBm
30.0
Psat
dBm
dBm
dB
31.0
40.0
-
32.0
41.0
37.0
7.0
OIP3 at Pout = 18 dBm per Tone
Power Detector Range
Drain Bias Voltage (Vd1,2,3)
Detector Bias Voltage (Vdet,ref)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1)
-
VDC
VDC
VDC
mA
7.0
5.0
-2
-1.0
100
200
400
0.0
200
400
800
Supply Current (Id2)
mA
Supply Current (Id3)
mA
3. Minimum specifications are set under nominal (typ.) bias conditions. Bias can be adjusted higher to achieve greater linearity and power.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
XP1043-QH
Power Amplifier
12.0-16.0 GHz
Rev. V1
Recommended Layout
Recommended Decoupling Capacitors: 100pF 0402, 10µF 0805
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
XP1043-QH
Power Amplifier
12.0-16.0 GHz
Rev. V1
Typical Performance Curves
XP1043-QH:S-parameters(dB)vs. Freq (GHz),
(VDD=7V, ID1=100mA, ID2=200mA, ID3=400mA)
XP1043-QH:Pout (dBm)vsPin (dBm)at Room Temp.
Vd = 7V, Iq = 700mA
30
25
20
15
10
5
34
32
30
28
26
24
22
20
18
16
14
12
10
S21
S11
S22
Pout, Freq = 12.5 GHz
Pout, Freq = 13.0 GHz
0
-5
Pout, Freq
Pout, Freq
=
=
13.5 GHz
14.0 GHz
-10
-15
-20
-25
Pout, Freq = 14.5 GHz
Pout, Freq = 15.0 GHz
Pout, Freq = 15.5 GHz
10
11
12
13
14
15
16
17
18
Freq (GHz)
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
XP1043-QH:Pout (dBm)vsPin (dBm)at +85 °C.
Vd = 7V, Iq = 700mA
XP1043-QH:V_Detect (mV)vsOutput Power (dBm)
Freq = 12.5-15.5GHz, Temp = -45to 85DegreeC
10000
1000
100
34
32
30
28
26
24
22
20
18
16
14
12
10
12.5GHz, 25C
15.5GHz, 25C
12.5GHz, -45C
15.5GHz, -45C
12.5GHz, 85C
15.5GHz, 85C
Pout, Freq = 12.5 GHz
Pout, Freq = 13.0 GHz
Pout, Freq = 13.5 GHz
Pout, Freq = 14.0 GHz
Pout, Freq = 14.5 GHz
Pout, Freq = 15.0 GHz
Pout, Freq = 15.5 GHz
-10 -8 -6 -4 -2
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
10
0
3
6
9
12
15
18
21
24
27
Output Power (dBm)
XP1043-QH:C/I3(dBc)vsPout per Tone(dBm)at Room Temp.
Vd=7 V, Id=700 mA. 12.5to 15.5 GHz
XP1043-QH:C/I3 (dBc)vsPout per Tone(dBm)at at +85°C.
Vd=7 V, Id=700 mA. 12.5to 15.5 GHz
60
55
50
45
40
35
30
25
20
15
10
5
65
60
55
50
45
40
35
30
25
20
15
10
5
CI3, Freq = 12.5 GHz, Temp = 85 C
CI3, Freq = 13.5 GHz, Temp = 85 C
CI3, Freq = 14.5 GHz, Temp = 85 C
CI3, Freq = 15.5 GHz, Temp = 85 c
CI3, Freq = 12.5 GHz, Temp = 35 C
CI3, Freq = 13.5 GHz, Temp = 35 C
CI3, Freq = 14.5 GHz, Temp = 35 C
CI3, Freq = 15.5 GHz, Temp = 35 C
0
0
14
15
16
17
18
19
20
21
22
14
15
16
17
18
19
20
21
22
Output Power (dBm per tone)
Output Power (dBm per tone)
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
XP1043-QH
Power Amplifier
12.0-16.0 GHz
Rev. V1
MTTF
These numbers were calculated based on accelerated life test information and thermal model analysis re-
ceived from the fabricating foundry.
XP1043-QH-0G00: MTTF hours vs Package Base Temperature
Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA
1.0E+14
1.0E+13
1.0E+12
1.0E+11
1.0E+10
1.0E+09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
1.0E+04
1.0E+03
20
30
40
50
60
70
80
90
100
110
120
130
Package Base Temp (°C)
XP1043-QH-0G00: Tch vs Package Base Temperature
Vd=7.0V,Id1=100mA,Id2=200mA,Id3=400mA
225
200
175
150
125
100
75
50
20
30
40
50
60
70
80
90
100
110
120
130
Package Base Temp (°C)
XP1043-QH-0N00: Operating Power De-rating Curve (continuous)
6
5
4
3
2
1
0
25
50
75
100
125
150
175
Package Base Temp (ºC)
5
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
XP1043-QH
Power Amplifier
12.0-16.0 GHz
Rev. V1
App Note [1] Biasing - As shown in the Pin Designations table, the device is operated under the nominal bias
conditions of VD1,2,3 at 7.0V with 100, 200, 400mA respectively. The device can also be safely biased to a
maximum of 9 V and 1.4 A to provide greater than 2 Watts of saturated RF power. It is recommended to use ac-
tive bias to keep the currents constant in order to maintain the best performance over temperature. Under heavy
RF saturation the device will tend to self bias and pull the desired drain current. Depending on the supply volt-
age available and the power dissipation constraints, the bias circuit may be a single transistor or a low power
operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate
of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage
needed to do this is -1.0V. Make sure to sequence the applied voltage to ensure negative gate bias is available
before applying the positive drain supply.
App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling
caps as close to the bias pins as possible, with additional 10μF decoupling caps.
App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by provid-
ing +5V bias and measuring the difference in output voltage with standard op-amp in a differential mode configu-
ration.
Bias Circuit
R
The output impedance of the bias circuit’s gate output
should be small. When in saturation, the gates of the
XP1043-QH can draw several mA which may cause ad-
verse affects in a gate circuit with high output impedance. It
is recommended that an Emitter Follower circuit be used
(shown above), which follows the bias circuit’s gate output.
This will result in a high-input impedance, low-output im-
pedance buffer between the gate output of the bias circuit
and the gate input of the XP1043-QH.
To Gate
From Bias
Circuit
-5V
Emitter Follower placed between the
(gate) output of the bias circuit MMIC gate
6
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
XP1043-QH
Power Amplifier
12.0-16.0 GHz
Rev. V1
Lead-Free Package Dimensions/Layout
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
7
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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