KSC2334 [TGS]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | KSC2334 |
| 厂家： | 
Tiger Electronic Co.,Ltd |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总1页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIGER ELECTRONIC CO.,LTD
Product specification
KSC2334
NPN Epitaxial Silicon Transistor
DESCRIPTION
High Speed Switching Industrial Use
◆
Complement to KSA1010
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Value Unit
Symbol
VCBO
150
100
7
V
VCEO
VEBO
IC
V
V
7.0
3.5
40
A
Base Current
IB
A
Total Dissipation at
Ptot
Tj
W
oC
oC
150
Max. Operating Junction Temperature
Storage Temperature
-55~15
TO-220
Tstg
0
( Ta = 25 OC)
ELECTRICAL CHARACTERISTICS
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Symbol
Test Conditions
Min.
—
Typ.
—
Max. Unit
ICEO
IEBO
VCB=100V, IE=0
VEB=5V, IC=0
IC=30mA, IB=0
10
10
A
A
μ
μ
—
—
VCEO
hFE(1)
hFE(2)
hFE(3)
Collector-Emitter Sustaining Voltage
100
40
40
20
—
V
—
—
—
VCE=5.0V, IC=0.5A
VCE=5.0V, IC=3.0A
VCE=5.0V, IC=5.0A
IC=5.0A,IB=500mA
IC=5.0A,IB=500mA
I = -I = 0.5A R = 10
—
DC Current Gain
240
—
—
—
VCE(sat)
VBE(sat)
tS
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
0.5
1.5
V
V
—
—
—
0.5
s
μ
Ω
—
—
B1
B2
L
hFE(2)
R: 40 ~ 80 O: 70 ~ 140 Y: 120 ~ 240
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