CP25P40FR [THINKISEMI]

30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers;


型号：	CP25P40FR
厂家：	Thinki Semiconductor Co., Ltd.
描述：	30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers
文件：	总3页 (文件大小：1016K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CP25P10FR thru CP25P60FR

Pb Free Plating Product

30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

TO-3PN/TO-3PB

Features

ꢀ

ThinkiSemi mesa technology with high efficiency

Bottom Side Metal Heat Sink/Case

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,Motor Control,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

ꢀ

Case: Heatsink TO-3PN open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Case

Series

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 0.65 gram approximately

Doubler

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "FS"

Negative

Positive

Suffix "F"

Suffix "FR"

Suffix "FD"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

CP25P10FR

CP25P20FR

CP25P30FR

CP25P40FR

CP25P50FR

CP25P60FR

UNIT

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

30.0

IF(AV)

(Total Device 2x15A=30A)

Current TC=125 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

300

Maximum Instantaneous Forward Voltage

0.98

1.30

1.70

@ 15.0 A

(Per Diode/Per Leg)

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

5.0

100

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Trr

35-50

150

^oC

Operating Junction and Storage

Temperature Range

J, TSTG

-55 to +150

= 0.5A I = 1 0A Irr = 0.25A.

F R

NOTES : (1) Reverse recovery test conditions I

(2) Thermal Resistance junction to terminal.

(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Page 1/3

http://www.thinkisemi.com.tw/

Rev.10T

CP25P10FR thru CP25P60FR

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

FIG.1 - FORWARD CURRENT DERATING CURVE

300

250

200

150

100

Pulse Width 8.3ms

Single Half-Sire-Wave

(JEDEC Method)

60 Hz Resistive or

Inductive load

100

150

100

LEAD TEMPERATURE, ^o

NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

100

150

TJ=125^oC

CP25P30FR/CP25P40FR

CP25P10FR/CP25P20FR

TJ=25^oC

CP25P50FR/CP25P60FR

1.0

0.1

TJ=25^oC

PULSE WIDTH=300uS

1% DUTY CYCLE

0.1

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000

100

TJ = 25^oC

f = 1.0 MHZ

Vsig = 50mVp-p

0.1

1.0

4.0 10

100

REVERSE VOLTAGE, VOLTS

Page 2/3

Rev.10T

http://www.thinkisemi.com.tw/

CP25P10FR thru CP25P60FR

Package Information

TO-3PN/TO-3PB Package Outline

Dimensions(millimeters)

Symbol

Min.

4.60

1.50

2.20

0.80

2.90

1.90

0.40

5.25

15.3

13.2

13.1

9.10

19.7

19.1

18.3

2.80

4.80

3.00

Max.

5.00

2.00

2.60

1.20

3.30

2.30

0.80

5.65

15.7

13.6

13.5

9.50

20.1

18.7

3.20

5.20

3.40

ФP

Page 3/3

http://www.thinkisemi.com.tw/

Rev.10T

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