DSEE15-16CC [THINKISEMI]

15.0 Ampere Insulated Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers;


型号：	DSEE15-16CC
厂家：	Thinki Semiconductor Co., Ltd.
描述：	15.0 Ampere Insulated Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers
文件：	总2页 (文件大小：277K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DSEE15-04CC thru DSEE15-24CC

Pb Free Plating Product

15.0 Ampere Insulated Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers

ITO-220AB/TO-220F-3L

Unit:inch(mm)

Features

※ ThinkiSemi latest&matured process FRD/FRED

※ Low forward voltage drop

※ High current capability

.189(4.8)

.165(4.2)

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

.130(3.3)

.114(2.9)

※ Low reverse leakage current

※ High surge current capability

Application

※ Automotive Inverters and Solar Inverters

※ Car Audio Amplifiers and Sound Device Systems

※ Plating Power Supply,Motor Control,UPS and SMPS etc.

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

※Case:Isolated fully plastic ITO-220AB/TO-220F-3L package

※ Epoxy: UL 94V-0 rate flame retardant

※ Terminals: Solderable per MIL-STD-202 method 208

※ Polarity: As marked on diode body

※ Mounting position: Any

(2.55)

※ Weight: 2.0 gram approximately

Doubler

Series

Negative

Positive

Tandem Polarity

Prefix "DSED"

Tandem Polarity

Prefix "DSEE"

Common Cathode

Prefix "DSEC"

Common Anode

Prefix "DSEA"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

PARAMETER

SYMBOL

DSEE15-04CC DSEE15-08CC DSEE15-12CC DSEE15-16CC DSEE15-20CC

DSEE15-24CC

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200x2

140x2

200x2

400x2

280x2

400x2

600x2

420x2

600x2

800x2

560x2

800x2

1000x2

700x2

1200x2

840x2

Maximum DC Blocking Voltage

1000x2

1200x2

Maximum Average Forward Rectified

Current TC=125℃

15.0

300

IF(AV)

IFSM

(Total Device 2x15.0A=30.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)(Per Diode/Per Leg)

Maximum Instantaneous Forward Voltage

@15.0A(Per Diode/Per Leg)

(Typical)

1.50-1.70

0.85-0.95

1.00-1.25

1.25-1.50

Maximum DC Reverse Current @TJ=25℃

At Rated DC Blocking Voltage @TJ=125℃

1.0

100

μA

Maximum Reverse Recovery Time (Note1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

25-50

50-75

Trr

150

3.0

RθJC

℃/W

Operating Junction and Storage

Temperature Range

-55 to +175

TJ,TSTG

℃

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Note:(3)Thermal Resistance junction to case.

Page 1/2

Rev.11T

http://www.thinkisemi.com.tw/

DSEE15-04CC thru DSEE15-24CC

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

FIG.1 - FORWARD CURRENT DERATING CURVE

300

Pulse Width 8.3ms

Single Half-Sire-Wave

(JEDEC Method)

240

180

120

60 Hz Resistive or

Inductive load

125

187.5

62.5

100

NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE,

℃

FIG.3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

1000

150

DSEE15-04CC

TJ=125℃

100

DSEE15-08CC

DSEE15-12CC

℃

TJ=25

DSEE15-16CC/DSEE15-20CC/DSEE15-24CC

℃

TJ=25

PULSE WIDTH=300uS

1% DUTY CYCLE

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

FIG.5 - TYPICAL JUNCTION CAPACITANCE

2250

℃

TJ = 25

f = 1.0 MHZ

Vsig = 50mVp-p

150

0.1

1.0

4.0 10

100

REVERSE VOLTAGE, VOLTS

Page 2/2

Rev.11T

http://www.thinkisemi.com.tw/

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