FESB16DTR [THINKISEMI]

16.0 Ampere Surface Mount Type Negative Ultra Fast Recovery Rectifier Diode;


型号：	FESB16DTR
厂家：	Thinki Semiconductor Co., Ltd.
描述：	16.0 Ampere Surface Mount Type Negative Ultra Fast Recovery Rectifier Diode
文件：	总2页 (文件大小：333K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FESB16ATR thru FESB16NTR

Pb Free Plating Product

FESB16ATR thru FESB16NTR

16.0 Ampere Surface Mount Type Negative Ultra Fast Recovery Rectifier Diode

TO-263AB/D2PAK

Unit:inch(mm)

Features

※ ThinkiSemi latest&matured process FRD/FRED

※ Low forward voltage drop

※ High current capability

※ Low reverse leakage current

※ High surge current capability

Application

※ Automotive Inverters and Solar Inverters

※ Car Audio Amplifiers and Sound Device Systems

※ Plating Power Supply,Motor Control,UPS and SMPS etc.

Mechanical Data

※

Case:Surface Mount TO-263AB/D2PAK package

※ Epoxy: UL 94V-0 rate flame retardant

※ Terminals: Solderable per MIL-STD-202 method 208

※ Polarity: As marked on diode body

※ Mounting position: Any

Internal Configuration

Base Backside

Negative

※ Weight: 2.0 gram approximately

Positive

Suffix "T"

Suffix "TR"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

FESB16ATR

FESB16BTR

FESB16CTR

FESB16DTR

FESB16ETR

FESB16FTR

FESB16GTR

FESB16HTR

FESB16ITR

FESB16JTR

FESB16KTR

FESB16LTR

PARAMETER

SYMBOL

FESB16MTR

FESB16NTR

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1200

840

Maximum DC Blocking Voltage

1000

1200

Maximum Average Forward Rectified

Current TC=125℃

16.0

300

IF(AV)

IFSM

(Total Device 16.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)(Per Diode/Per Leg)

Maximum Instantaneous Forward Voltage

@16.0A(Per Diode/Per Leg)

(Typical)

1.50-1.70

0.85-0.95

1.00-1.25

1.25-1.50

Maximum DC Reverse Current @TJ=25℃

At Rated DC Blocking Voltage @TJ=125℃

1.0

100

μA

Maximum Reverse Recovery Time (Note1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

25-50

50-75

Trr

160

1.5

RθJC

℃/W

Operating Junction and Storage

Temperature Range

-55 to +175

TJ,TSTG

℃

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Note:(3)Thermal Resistance junction to case.

Page 1/2

Rev.10T

http://www.thinkisemi.com.tw/

FESB16ATR thru FESB16NTR

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

FIG.1 - FORWARD CURRENT DERATING CURVE

300

240

180

120

Pulse Width 8.3ms

Single Half-Sire-Wave

(JEDEC Method)

12.8

9.6

6.4

3.2

60 Hz Resistive or

Inductive load

125

187.5

62.5

100

NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE,

℃

FIG.3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

1000

FESB16ATR/FESB16BTR/FESB16CTR/FESB16DTR

TJ=125℃

100

FESB16ETR/FESB16FTR/FESB16GTR

FESB16HTR/FESB16ITR/FESB16JTR

℃

TJ=25

FESB16KTR/FESB16LTR/FESB16MTR/FESB16NTR

℃

TJ=25

PULSE WIDTH=300uS

1% DUTY CYCLE

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000

℃

TJ = 25

f = 1.0 MHZ

Vsig = 50mVp-p

100

0.1

1.0

4.0 10

100

REVERSE VOLTAGE, VOLTS

Page 2/2

Rev.10T

http://www.thinkisemi.com.tw/

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