FESB16DT
更新时间：2024-10-29 23:28:41
品牌：THINKISEMI
描述：16.0 Amperes Surface Mount Type Positive Ultra Fast Recovery Rectifier Diode
概述
数据手册FESB16DT 概述
16.0 Amperes Surface Mount Type Positive Ultra Fast Recovery Rectifier Diode
FESB16DT 数据手册
通过下载FESB16DT数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载FESB16AT thru FESB16NT
Pb Free Plating Product
FESB16AT thru FESB16NT
16.0 Amperes Surface Mount Type Positive Ultra Fast Recovery Rectifier Diode
TO-263AB/D2PAK
Unit:inch(mm)
Features
※ ThinkiSemi latest&matured process FRD/FRED
※ Low forward voltage drop
※ High current capability
※ Low reverse leakage current
※ High surge current capability
Application
※ Automotive Inverters and Solar Inverters
※ Car Audio Amplifiers and Sound Device Systems
※ Plating Power Supply,Motor Control,UPS and SMPS etc.
Mechanical Data
※
Case:Surface Mount TO-263AB/D2PAK package
※ Epoxy: UL 94V-0 rate flame retardant
※ Terminals: Solderable per MIL-STD-202 method 208
※ Polarity: As marked on diode body
※ Mounting position: Any
Internal Configuration
Base Backside
Base Backside
Negative
Suffix "TR"
※ Weight: 2.0 gram approximately
Positive
Suffix "T"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
FESB16AT
FESB16BT
FESB16CT
FESB16DT
FESB16ET
FESB16FT
FESB16GT
FESB16HT
FESB16IT
FESB16JT
FESB16KT
FESB16LT
PARAMETER
SYMBOL
FESB16MT
FESB16NT
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1200
V
V
V
840
Maximum DC Blocking Voltage
1000
1200
Maximum Average Forward Rectified
Current TC=125℃
16.0
300
IF(AV)
IFSM
A
A
V
(Total Device 16.0A)
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
Maximum Instantaneous Forward Voltage
@16.0A(Per Diode/Per Leg)
VF
(Typical)
1.50-1.70
0.85-0.95
1.00-1.25
1.25-1.50
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
μA
μA
IR
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
25-50
50-75
Trr
CJ
nS
pF
160
1.5
RθJC
℃/W
Operating Junction and Storage
Temperature Range
-55 to +175
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Page 1/2
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
FESB16AT thru FESB16NT
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
300
240
180
120
60
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
12.8
9.6
6.4
3.2
60 Hz Resistive or
Inductive load
0
0
125
187.5
62.5
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE,
℃
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
80
FESB16AT/FESB16BT/FESB16CT/FESB16DT
TJ=125℃
100
FESB16ET/FESB16FT/FESB16GT
FESB16HT/FESB16IT/FESB16JT
8
10
℃
TJ=25
1
FESB16KT/FESB16LT/FESB16MT/FESB16NT
1
℃
TJ=25
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
℃
TJ = 25
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
FESB16DT 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| FESB16DT-31 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 16A, 200V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 | 获取价格 |
|
| FESB16DT-81 | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 16A, 200V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3 | 获取价格 |
|
| FESB16DT-E3/45 | VISHAY | DIODE 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode | 获取价格 |
|
| FESB16DT-E3/81 | VISHAY | DIODE 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode | 获取价格 |
|
| FESB16DT-HE3/45 | VISHAY | DIODE 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode | 获取价格 |
|
| FESB16DT-HE3/81 | VISHAY | DIODE 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode | 获取价格 |
|
| FESB16DTHE3/45 | VISHAY | DIODE 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode | 获取价格 |
|
| FESB16DTHE3/81 | VISHAY | DIODE 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode | 获取价格 |
|
| FESB16DTHE3_A/I | VISHAY | Rectifier Diode, 1 Phase, 1 Element, 16A, 200V V(RRM), Silicon, TO-263AB, D2PAK-3/2 | 获取价格 |
|
| FESB16DTR | THINKISEMI | 16.0 Ampere Surface Mount Type Negative Ultra Fast Recovery Rectifier Diode | 获取价格 |
|
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