HER1006GD [THINKISEMI]

10Ampere Heat Sink Dual Doubler Polarity High Efficiency Rectifiers;
HER1006GD
型号: HER1006GD
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

10Ampere Heat Sink Dual Doubler Polarity High Efficiency Rectifiers

文件: 总3页 (文件大小:849K)
中文:  中文翻译
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CTG-31R thru CTG-36R  
CTG-31R/CTG-32R/CTG-33R/CTG-34R/CTG-35R/CTG-36R  
Pb Free Plating Product  
20.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers  
TO-3PN  
Features  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
Bottom Side Metal Heat Sink  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,Motor Control,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
Mechanical Data  
Case: Heatsink TO-3PN open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Case  
Case  
Case  
Case  
Series  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 0.61 gram approximately  
Doubler  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "UR"  
Negative  
Positive  
Suffix "S"  
Suffix "R"  
Suffix "U"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
CTG-33R CTG-35R  
CTG-34R CTG-36R  
CTG-31R  
UNIT  
SYMBOL  
CTG-32R  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
20.0  
200  
1.3  
A
A
V
IF(AV)  
(Total Device 2x10A=20A)  
Current TC  
=125  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
Maximum Instantaneous Forward Voltage  
V
F
0.98  
120  
1.7  
(Per Diode/Per Leg)  
@ 10.0 A  
5.0  
100  
μA  
μA  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25  
I
R
J
=125  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
C
J
70  
R
JC  
0.85  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
CTG-31R thru CTG-36R  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
20  
16  
10  
8
200  
175  
150  
125  
100  
75  
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
6
50  
4
25  
60 Hz Resistive or  
Inductive load  
0
0
0
50  
100  
150  
1
10  
100  
CASE TEMPERATURE, oC  
NUMBER OF CYCLES AT 60Hz  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
1000  
100  
10  
CTG-31R/CTG-32R  
TJ=125oC  
CTG-33R/CTG-34R  
100  
10  
TJ=25oC  
CTG-35R/CTG-36R  
0.1  
1
TJ=25oC  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.01  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
1000  
TJ = 25oC  
f = 1.0 MHZ  
Vsig = 50mVp-p  
100  
10  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
Page 2/3  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  
CTG-31R thru CTG-36R  
Package Information  
TO-3PN Package Outline  
Dimensions(millimeters)  
Symbol  
Min.  
4.60  
1.50  
2.20  
0.80  
2.90  
1.90  
0.40  
5.25  
15.3  
13.2  
13.1  
9.10  
19.7  
19.1  
18.3  
2.80  
4.80  
3.00  
Max.  
5.00  
2.00  
2.60  
1.20  
3.30  
2.30  
0.80  
5.65  
15.7  
13.6  
13.5  
9.50  
20.1  
20.1  
18.7  
3.20  
5.20  
3.40  
A
A1  
A2  
b
b1  
b2  
c
e
E
E1  
E2  
E3  
H
H1  
H2  
H3  
G
ФP  
Page 3/3  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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