HER2004CL [THINKISEMI]

20.0 Ampere Heatsink Dual Series Connection High Efficiency Rectifiers;
HER2004CL
型号: HER2004CL
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

20.0 Ampere Heatsink Dual Series Connection High Efficiency Rectifiers

文件: 总2页 (文件大小:261K)
中文:  中文翻译
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HER2002CL thru HER2012CL  
HER2002CL thru HER2012CL  
Pb Free Plating Product  
20.0 Ampere Heatsink Dual Series Connection High Efficiency Rectifiers  
TO-220AB/TO-220-3L  
Unit:inch(mm)  
Features  
ThinkiSemi latest&matured process FRD/FRED  
Low forward voltage drop  
High current capability  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink open metal TO-220AB/TO-220-3L package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
.1(2.54)  
.1(2.54)  
Case  
Case  
Case  
Case  
Weight: 2.0 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Suffix "CR"  
Tandem Polarity  
Suffix "CL"  
Common Cathode  
Suffix "CT"  
Common Anode  
Suffix "CA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
HER2003CL  
HER2004CL  
PARAMETER  
HER2010CL  
HER2012CL  
SYMBOL  
HER2006CL  
HER2008CL  
UNIT  
HER2002CL  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1200  
840  
V
V
V
Maximum DC Blocking Voltage  
1000  
1200  
Maximum Average Forward Rectified  
Current TC=125℃  
20.0  
200  
IF(AV)  
IFSM  
A
A
V
(Total Device 2x10.0A=20.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)(Per Diode/Per Leg)  
Maximum Instantaneous Forward Voltage  
@10.0A(Per Diode/Per Leg)  
VF  
(Typical)  
1.30-1.70  
0.85-1.00  
1.00-1.30  
1.30-1.70  
Maximum DC Reverse Current @TJ=25℃  
At Rated DC Blocking Voltage @TJ=125℃  
1.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
35-50  
50-75  
Trr  
CJ  
nS  
pF  
100  
1.5  
RθJC  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
Rev.11T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  
HER2002CL thru HER2012CL  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
20  
200  
160  
120  
80  
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
16  
12  
8
40  
4
60 Hz Resistive or  
Inductive load  
0
0
125  
187.5  
62.5  
1
10  
100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE,  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
1000  
100  
HER2002CL  
TJ=125  
100  
HER2003CL/HER2004CL  
HER2006CL  
10  
10  
TJ=25  
1
HER2008CL/HER2010CL/HER2012CL  
1
TJ=25  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.1  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
1000  
TJ = 25  
f = 1.0 MHZ  
Vsig = 50mVp-p  
100  
10  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
Page 2/2  
Rev.11T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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