HER3008N [THINKISEMI]

30 Ampere Heat Sink Dual Common Anode High Efficiency Rectifier Diodes;


型号：	HER3008N
厂家：	Thinki Semiconductor Co., Ltd.
描述：	30 Ampere Heat Sink Dual Common Anode High Efficiency Rectifier Diodes
文件：	总3页 (文件大小：1083K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HER3001N thru HER3008N

Pb Free Plating Product

30 Ampere Heat Sink Dual Common Anode High Efficiency Rectifier Diodes

TO-3PN

Features

ꢀ

Fast switching for high efficiency

Low forward voltage drop

High current capability

Bottom Side Metal Heat Sink

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,Motor Control,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

ꢀ

Case: Heatsink TO-3PN open metal package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Case

Series

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 0.65 gram approximately

Doubler

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "E"

Negative

Positive

Suffix "PT"

Suffix "N"

Suffix "D"

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

HER

Characteristic

Symbol

Unit

3001N 3002N 3003N 3004N 3005N 3006N 3007N 3008N

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

300

210

400

280

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_C= 100°C

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

300

Forward Voltage

@I_F= 15A

V^FM

I^RM

1.0

1.3

1.7

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

500

µA

Reverse Recovery Time (Note 1)

t^rr

C^j

°C

Typical Junction Capacitance (Note 2)

175

145

Operating and Storage Temperature Range

T^j, T^STG

-55 to +150

Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

Page 1/3

http://www.thinkisemi.com.tw/

Rev.09T

1995 Thinki Semiconductor Co., Ltd.

HER3001N thru HER3008N

100

HER3001N/HER3002N/HER3003N/HER3004N

HER3005N

1.0

0.1

HER3006N/HER3007N/HER3008N

Pulse width = 300µs

2% duty cycle

0.5

1.0

1.5

100

150

T_C, CASE TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

300

200

400

T_j= 25°C

f = 1.0MHz

8.3 ms single half-sine-wave

JEDEC method

HER3001N/HER3002N/HER3003N/

HER3004N/HER3005N

100

HER3006N/HER3007N/HER3008N

100

0.1

1.0

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60Hz

Fig. 3 Maximum Non-Repetitive Surge Current

Fig. 4 Typical Junction Capacitance

t_rr

+0.5A

50Ω NI (Non-inductive)

10Ω NI

Device

Under

Test

(-)

(+)

Pulse

Generator

(Note 2)

50V DC

Approx

-0.25A

(-)

1.0Ω

(+)

Oscilloscope

(Note 1)

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

-1.0A

Set time base for 5/10ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

Page 2/3

http://www.thinkisemi.com.tw/

Rev.09T

1995 Thinki Semiconductor Co., Ltd.

HER3001N thru HER3008N

Package Information

TO-3PN Package Outline

Dimensions(millimeters)

Symbol

Min.

4.60

1.50

2.20

0.80

2.90

1.90

0.40

5.25

15.3

13.2

13.1

9.10

19.7

19.1

18.3

2.80

4.80

3.00

Max.

5.00

2.00

2.60

1.20

3.30

2.30

0.80

5.65

15.7

13.6

13.5

9.50

20.1

18.7

3.20

5.20

3.40

ФP

Page 3/3

http://www.thinkisemi.com.tw/

Rev.09T

1995 Thinki Semiconductor Co., Ltd.

相关型号：