HER3008PR [THINKISEMI]

30.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers;


型号：	HER3008PR
厂家：	Thinki Semiconductor Co., Ltd.
描述：	30.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers
文件：	总2页 (文件大小：274K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HER3002PR thru HER3012PR

Pb Free Plating Product

30.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers

TO-247AD/TO-3P

Unit:inch(mm)

Features

※ ThinkiSemi latest&matured process FRD/FRED

※ Low forward voltage drop

※ High current capability

.640(16.25)

.620(15.75)

.199(5.05)

.175(4.45)

.142(3.6)

.125(3.2)

※ Low reverse leakage current

※ High surge current capability

Application

.095(2.4)

※ Automotive Inverters and Solar Inverters

※ Car Audio Amplifiers and Sound Device Systems

※ Plating Power Supply,Motor Control,UPS and SMPS etc.

.126(3.2)

.110(2.8)

.050(1.25)

.045(1.15)

.030(0.75)

.017(0.45)

Mechanical Data

.225(5.7)

.204(5.2)

.225(5.7)

.204(5.2)

※ Case: Heatsink TO-247AD/TO-3P Package Outline

※ Epoxy: UL 94V-0 rate flame retardant

※ Terminals: Solderable per MIL-STD-202 method 208

※ Polarity: As marked on diode body

※ Mounting position: Any

Case

※ Weight: 6.0 gram approximately

Doubler

Series

Negative

Positive

Tandem Polarity

Suffix "PR"

Tandem Polarity

Suffix "PL"

Common Cathode

Suffix "PT"

Common Anode

Suffix "PA"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

HER3003PR

HER3004PR

PARAMETER

HER3010PR

HER3012PR

SYMBOL

HER3006PR

HER3008PR

UNIT

HER3002PR

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1200

840

Maximum DC Blocking Voltage

1000

1200

Maximum Average Forward Rectified

Current TC=125℃

30.0

300

IF(AV)

IFSM

(Total Device 2x15.0A=30.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)(Per Diode/Per Leg)

Maximum Instantaneous Forward Voltage

@15.0A(Per Diode/Per Leg)

(Typical)

1.30-1.70

0.85-1.00

1.00-1.30

1.30-1.70

Maximum DC Reverse Current @TJ=25℃

At Rated DC Blocking Voltage @TJ=125℃

1.0

100

μA

Maximum Reverse Recovery Time (Note1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

35-50

50-75

Trr

150

0.75

RθJC

℃/W

Operating Junction and Storage

Temperature Range

-55 to +175

TJ,TSTG

℃

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Note:(3)Thermal Resistance junction to case.

Page 1/2

Rev.11T

http://www.thinkisemi.com.tw/

HER3002PR thru HER3012PR

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

FIG.1 - FORWARD CURRENT DERATING CURVE

300

Pulse Width 8.3ms

Single Half-Sire-Wave

(JEDEC Method)

240

180

120

60 Hz Resistive or

Inductive load

125

187.5

62.5

100

NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE,

℃

FIG.3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

1000

150

HER3002PR

TJ=125℃

100

HER3003PR/HER3004PR

HER3006PR

℃

TJ=25

HER3008PR/HER3010PR/HER3012PR

℃

TJ=25

PULSE WIDTH=300uS

1% DUTY CYCLE

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

FIG.5 - TYPICAL JUNCTION CAPACITANCE

2250

℃

TJ = 25

f = 1.0 MHZ

Vsig = 50mVp-p

150

0.1

1.0

4.0 10

100

REVERSE VOLTAGE, VOLTS

Page 2/2

Rev.11T

http://www.thinkisemi.com.tw/

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