HER4008PA [THINKISEMI]

40.0 Ampere Heatsink Dual Common Anode High Efficiency Rectifiers;


型号：	HER4008PA
厂家：	Thinki Semiconductor Co., Ltd.
描述：	40.0 Ampere Heatsink Dual Common Anode High Efficiency Rectifiers
文件：	总2页 (文件大小：274K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HER4002PA thru HER4012PA

Pb Free Plating Product

40.0 Ampere Heatsink Dual Common Anode High Efficiency Rectifiers

TO-247AD/TO-3P

Unit:inch(mm)

Features

※ ThinkiSemi latest&matured process FRD/FRED

※ Low forward voltage drop

※ High current capability

.640(16.25)

.620(15.75)

.199(5.05)

.175(4.45)

.142(3.6)

.125(3.2)

※ Low reverse leakage current

※ High surge current capability

Application

.095(2.4)

※ Automotive Inverters and Solar Inverters

※ Car Audio Amplifiers and Sound Device Systems

※ Plating Power Supply,Motor Control,UPS and SMPS etc.

.126(3.2)

.110(2.8)

.050(1.25)

.045(1.15)

.030(0.75)

.017(0.45)

Mechanical Data

.225(5.7)

.204(5.2)

.225(5.7)

.204(5.2)

※ Case: Heatsink TO-247AD/TO-3P Package Outline

※ Epoxy: UL 94V-0 rate flame retardant

※ Terminals: Solderable per MIL-STD-202 method 208

※ Polarity: As marked on diode body

※ Mounting position: Any

Case

※ Weight: 6.0 gram approximately

Doubler

Series

Negative

Positive

Tandem Polarity

Suffix "PR"

Tandem Polarity

Suffix "PL"

Common Cathode

Suffix "PT"

Common Anode

Suffix "PA"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

HER4003PA

HER4004PA

PARAMETER

HER4010PA

HER4012PA

SYMBOL

HER4006PA

HER4008PA

UNIT

HER4002PA

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1200

840

Maximum DC Blocking Voltage

1000

1200

Maximum Average Forward Rectified

Current TC=125℃

40.0

400

IF(AV)

IFSM

(Total Device 2x20.0A=40.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)(Per Diode/Per Leg)

Maximum Instantaneous Forward Voltage

@20.0A(Per Diode/Per Leg)

(Typical)

1.30-1.70

0.85-1.00

1.00-1.30

1.30-1.70

Maximum DC Reverse Current @TJ=25℃

At Rated DC Blocking Voltage @TJ=125℃

1.0

100

μA

Maximum Reverse Recovery Time (Note1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

35-50

50-75

Trr

200

0.75

RθJC

℃/W

Operating Junction and Storage

Temperature Range

-55 to +175

TJ,TSTG

℃

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Note:(3)Thermal Resistance junction to case.

Page 1/2

Rev.11T

http://www.thinkisemi.com.tw/

HER4002PA thru HER4012PA

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

FIG.1 - FORWARD CURRENT DERATING CURVE

400

Pulse Width 8.3ms

Single Half-Sire-Wave

(JEDEC Method)

320

240

160

60 Hz Resistive or

Inductive load

125

187.5

62.5

100

NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE,

℃

FIG.3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

1000

200

HER4002PA

TJ=125℃

100

HER4003PA/HER4004PA

HER4006PA

℃

TJ=25

HER4008PA/HER4010PA/HER4012PA

℃

TJ=25

PULSE WIDTH=300uS

1% DUTY CYCLE

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

FIG.5 - TYPICAL JUNCTION CAPACITANCE

2250

℃

TJ = 25

f = 1.0 MHZ

Vsig = 50mVp-p

150

0.1

1.0

4.0 10

100

REVERSE VOLTAGE, VOLTS

Page 2/2

Rev.11T

http://www.thinkisemi.com.tw/

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