HERF1001GA [THINKISEMI]
10Ampere Insulated Dual Common Anode High Efficiency Rectifiers;型号: | HERF1001GA |
厂家: | Thinki Semiconductor Co., Ltd. |
描述: | 10Ampere Insulated Dual Common Anode High Efficiency Rectifiers |
文件: | 总6页 (文件大小:1706K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SFF10L04G thru SFF10L08G
SFF10L04G/SFF10L05G/SFF10L06G/SFF10L08G
Pb Free Plating Product
10.0 Ampere Insulated Dual Common Cathode Super Fast Recovery Rectifiers
ITO-220AB
Unit : inch (mm)
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Super fast switching for high efficiency
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.130(3.3)
.114(2.9)
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Car Audio Amplifiers and Sound Device Systems
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
ꢀ
ꢀ
ꢀ
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.85 gram approximately
Doubler
Tandem Polarity Tandem Polarity
Suffix "GD" Suffix "GS"
Series
Negative
Common Cathode Common Anode
Suffix "G" Suffix "GA"
Positive
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
UNIT
SFF10L04G SFF10L05G SFF10L06G SFF10L08G
SFF10L04G
200
SFF10L05G
300
SFF10L06G
400
SFF10L08G
600
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
VRRM
V
V
VR(RMS)
140
280
280
420
Per device
Per diode
10
5
Forward current
IF(AV)
IFSM
A
A
Surge peak forward current, 8.3 ms single half
sine-wave superimposed on rated load per diode
125
80
Junction temperature
Storage temperature
TJ
- 55 to +150
- 55 to +150
°C
°C
TSTG
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
Junction-to-case thermal resistance
SYMBOL
RӨJL
LIMIT
UNIT
2
9
3
°C/W
°C/W
°C/W
RӨJA
RӨJC
Thermal Performance Note: Units mounted on recommended PCB (2"x3"x0.25" Al -plate)
Page 1/6
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
SFF10L04G thru SFF10L08G
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
IF = 5A, TJ = 25°C
IF = 5A, TJ = 125°C
IF = 5A, TJ = 25°C
IF = 5A, TJ = 125°C
IF = 5A, TJ = 25°C
SYMBOL
TYP
0.94
0.82
1.04
0.89
MAX
0.98
0.90
1.30
0.96
UNIT
V
V
SFF10L04G
SFF10L05G
SFF10L06G
SFF10L08G
V
V
Forward voltage per
diode (1)
VF
1.05
0.92
1.21
1.04
-
1.30
1.00
1.70
1.20
10
V
V
IF = 5A, TJ = 125°C
IF = 5A, TJ = 25°C
IF = 5A, TJ = 125°C
TJ = 25°C
V
V
µA
µA
pF
pF
pF
pF
Reverse current @ rated VR per diode (2)
SFF10L04G
IR
TJ = 125°C
-
400
-
60
SFF10L05G
Junction capacitance
1 MHz, VR=4.0V
CJ
50
-
SFF10L06G
SFF10L08G
SFF10L04G
SFF10L05G
Reverse recovery time
IF=0.5A , IR=1.0A
IRR=0.25A
-
35
trr
ns
SFF10L06G
SFF10L08G
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
Page 2/6
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
SFF10L04G thru SFF10L08G
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
14
12
10
8
1000
100
10
SFF10L04G
SFF10L04G
6
4
Resistive or
inductive load
with heat sink
2
f=1.0MHz
Vsig=50mVp-p
0
1
30
60
90
120
150
1
10
100
CASE TEMPERATURE (°C)
REVERSE VOLTAGE (V)
Fig3. Typical Reverse Characteristics
Fig4. Typical Forward Characteristics
100
10
10
SFF10L04G
SFF10L04G
TJ=125°C
1
0.1
TJ=125°C
1
TJ=25°C
TJ=25°C
0.1
0.01
0.001
0.01
0.001
Pulse width 300μs
1% duty cycle
10
20
30
40
50
60
70
80
90 100
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
Page 3/6
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
SFF10L04G thru SFF10L08G
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
1000
100
10
14
12
10
8
SFF10L05G
SFF10L05G
6
4
Resistive or
2
inductive load
with heat sink
f=1.0MHz
Vsig=50mVp-p
0
1
30
60
90
120
150
1
10
100
CASE TEMPERATURE (°C)
REVERSE VOLTAGE (V)
Fig3. Typical Reverse Characteristics
Fig4. Typical Forward Characteristics
10
100
10
SFF10L05G
SFF10L05G
TJ=125°C
1
0.1
TJ=125°C
1
TJ=25°C
TJ=25°C
0.1
0.01
0.001
0.01
0.001
Pulse width 300μs
1% duty cycle
10
20
30
40
50
60
70
80
90 100
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
Page 4/6
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
SFF10L04G thru SFF10L08G
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
14
1000
100
10
SFF10L06G
SFF10L06G
12
10
8
6
4
2
0
Resistive or
inductive load
with heat sink
f=1.0MHz
Vsig=50mVp-p
1
30
60
90
120
150
1
10
100
CASE TEMPERATURE (°C)
REVERSE VOLTAGE (V)
Fig3. Typical Reverse Characteristics
Fig4. Typical Forward Characteristics
10
100
10
SFF10L06G
SFF10L06G
TJ=125°C
1
0.1
TJ=125°C
1
TJ=25°C
TJ=25°C
0.1
0.01
0.001
0.01
0.001
Pulse width 300μs
1% duty cycle
10
20
30
40
50
60
70
80
90 100
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
Page 5/6
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
SFF10L04G thru SFF10L08G
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
14
1000
100
10
SFF10L08G
SFF10L08G
12
10
8
6
4
Resistive or
inductive load
2
0
with heat sink
f=1.0MHz
Vsig=50mVp-p
1
1
10
100
30
60
90
120
150
CASE TEMPERATURE (°C)
REVERSE VOLTAGE (V)
Fig3. Typical Reverse Characteristics
Fig4. Typical Forward Characteristics
SFF10L08G
100
10
10
SFF10L08G
TJ=125°C
1
0.1
TJ=125°C
1
TJ=25°C
TJ=25°C
0.1
0.01
0.001
0.01
0.001
Pulse width 300μs
1% duty cycle
10
20
30
40
50
60
70
80
90 100
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
Page 6/6
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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