HERF1001GA [THINKISEMI]

10Ampere Insulated Dual Common Anode High Efficiency Rectifiers;
HERF1001GA
型号: HERF1001GA
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

10Ampere Insulated Dual Common Anode High Efficiency Rectifiers

文件: 总6页 (文件大小:1706K)
中文:  中文翻译
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SFF10L04G thru SFF10L08G  
SFF10L04G/SFF10L05G/SFF10L06G/SFF10L08G  
Pb Free Plating Product  
10.0 Ampere Insulated Dual Common Cathode Super Fast Recovery Rectifiers  
ITO-220AB  
Unit : inch (mm)  
Features  
Super fast switching for high efficiency  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
Car Audio Amplifiers and Sound Device Systems  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case: ITO-220AB full plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 1.85 gram approximately  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "GD" Suffix "GS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "G" Suffix "GA"  
Positive  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
UNIT  
SFF10L04G SFF10L05G SFF10L06G SFF10L08G  
SFF10L04G  
200  
SFF10L05G  
300  
SFF10L06G  
400  
SFF10L08G  
600  
Marking code on the device  
Repetitive peak reverse voltage  
Reverse voltage, total rms value  
VRRM  
V
V
VR(RMS)  
140  
280  
280  
420  
Per device  
Per diode  
10  
5
Forward current  
IF(AV)  
IFSM  
A
A
Surge peak forward current, 8.3 ms single half  
sine-wave superimposed on rated load per diode  
125  
80  
Junction temperature  
Storage temperature  
TJ  
- 55 to +150  
- 55 to +150  
°C  
°C  
TSTG  
THERMAL PERFORMANCE  
PARAMETER  
Junction-to-lead thermal resistance  
Junction-to-ambient thermal resistance  
Junction-to-case thermal resistance  
SYMBOL  
RӨJL  
LIMIT  
UNIT  
2
9
3
°C/W  
°C/W  
°C/W  
RӨJA  
RӨJC  
Thermal Performance Note: Units mounted on recommended PCB (2"x3"x0.25" Al -plate)  
Page 1/6  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
SFF10L04G thru SFF10L08G  
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)  
PARAMETER  
CONDITIONS  
IF = 5A, TJ = 25°C  
IF = 5A, TJ = 125°C  
IF = 5A, TJ = 25°C  
IF = 5A, TJ = 125°C  
IF = 5A, TJ = 25°C  
SYMBOL  
TYP  
0.94  
0.82  
1.04  
0.89  
MAX  
0.98  
0.90  
1.30  
0.96  
UNIT  
V
V
SFF10L04G  
SFF10L05G  
SFF10L06G  
SFF10L08G  
V
V
Forward voltage per  
diode (1)  
VF  
1.05  
0.92  
1.21  
1.04  
-
1.30  
1.00  
1.70  
1.20  
10  
V
V
IF = 5A, TJ = 125°C  
IF = 5A, TJ = 25°C  
IF = 5A, TJ = 125°C  
TJ = 25°C  
V
V
µA  
µA  
pF  
pF  
pF  
pF  
Reverse current @ rated VR per diode (2)  
SFF10L04G  
IR  
TJ = 125°C  
-
400  
-
60  
SFF10L05G  
Junction capacitance  
1 MHz, VR=4.0V  
CJ  
50  
-
SFF10L06G  
SFF10L08G  
SFF10L04G  
SFF10L05G  
Reverse recovery time  
IF=0.5A , IR=1.0A  
IRR=0.25A  
-
35  
trr  
ns  
SFF10L06G  
SFF10L08G  
Notes:  
1. Pulse test with PW=0.3 ms  
2. Pulse test with PW=30 ms  
Page 2/6  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
SFF10L04G thru SFF10L08G  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig1. Forward Current Derating Curve  
Fig2. Typical Junction Capacitance  
14  
12  
10  
8
1000  
100  
10  
SFF10L04G  
SFF10L04G  
6
4
Resistive or  
inductive load  
with heat sink  
2
f=1.0MHz  
Vsig=50mVp-p  
0
1
30  
60  
90  
120  
150  
1
10  
100  
CASE TEMPERATURE (°C)  
REVERSE VOLTAGE (V)  
Fig3. Typical Reverse Characteristics  
Fig4. Typical Forward Characteristics  
100  
10  
10  
SFF10L04G  
SFF10L04G  
TJ=125°C  
1
0.1  
TJ=125°C  
1
TJ=25°C  
TJ=25°C  
0.1  
0.01  
0.001  
0.01  
0.001  
Pulse width 300μs  
1% duty cycle  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FORWARD VOLTAGE (V)  
Page 3/6  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
SFF10L04G thru SFF10L08G  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig1. Forward Current Derating Curve  
Fig2. Typical Junction Capacitance  
1000  
100  
10  
14  
12  
10  
8
SFF10L05G  
SFF10L05G  
6
4
Resistive or  
2
inductive load  
with heat sink  
f=1.0MHz  
Vsig=50mVp-p  
0
1
30  
60  
90  
120  
150  
1
10  
100  
CASE TEMPERATURE (°C)  
REVERSE VOLTAGE (V)  
Fig3. Typical Reverse Characteristics  
Fig4. Typical Forward Characteristics  
10  
100  
10  
SFF10L05G  
SFF10L05G  
TJ=125°C  
1
0.1  
TJ=125°C  
1
TJ=25°C  
TJ=25°C  
0.1  
0.01  
0.001  
0.01  
0.001  
Pulse width 300μs  
1% duty cycle  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FORWARD VOLTAGE (V)  
Page 4/6  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
SFF10L04G thru SFF10L08G  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig1. Forward Current Derating Curve  
Fig2. Typical Junction Capacitance  
14  
1000  
100  
10  
SFF10L06G  
SFF10L06G  
12  
10  
8
6
4
2
0
Resistive or  
inductive load  
with heat sink  
f=1.0MHz  
Vsig=50mVp-p  
1
30  
60  
90  
120  
150  
1
10  
100  
CASE TEMPERATURE (°C)  
REVERSE VOLTAGE (V)  
Fig3. Typical Reverse Characteristics  
Fig4. Typical Forward Characteristics  
10  
100  
10  
SFF10L06G  
SFF10L06G  
TJ=125°C  
1
0.1  
TJ=125°C  
1
TJ=25°C  
TJ=25°C  
0.1  
0.01  
0.001  
0.01  
0.001  
Pulse width 300μs  
1% duty cycle  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FORWARD VOLTAGE (V)  
Page 5/6  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
SFF10L04G thru SFF10L08G  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig1. Forward Current Derating Curve  
Fig2. Typical Junction Capacitance  
14  
1000  
100  
10  
SFF10L08G  
SFF10L08G  
12  
10  
8
6
4
Resistive or  
inductive load  
2
0
with heat sink  
f=1.0MHz  
Vsig=50mVp-p  
1
1
10  
100  
30  
60  
90  
120  
150  
CASE TEMPERATURE (°C)  
REVERSE VOLTAGE (V)  
Fig3. Typical Reverse Characteristics  
Fig4. Typical Forward Characteristics  
SFF10L08G  
100  
10  
10  
SFF10L08G  
TJ=125°C  
1
0.1  
TJ=125°C  
1
TJ=25°C  
TJ=25°C  
0.1  
0.01  
0.001  
0.01  
0.001  
Pulse width 300μs  
1% duty cycle  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FORWARD VOLTAGE (V)  
Page 6/6  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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